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Method for growth of sulfide crystal containing alkali metal, gallium or indium

A technology of chalcogen compounds and alkali metal halides, applied in the field of chalcogen compounds, can solve problems such as difficult preparation, difficult flux, high toxicity, etc.

Inactive Publication Date: 2007-04-25
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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Problems solved by technology

The method involves the eutectic halide flux CaCl 2 / KCl preparation, because alkaline earth metal halides are easy to absorb water except fluoride, and it is difficult to prepare high-purity anhydrous alkaline earth metal chlorides, bromides, and iodides, so the mixture of alkaline earth metal halides and alkali metal halides is used as the growth QUR 2 (A=Li, Na, K, Rb, Cs; Tr=Ga, In; Q=S, Se, Te) crystal fluxes have great difficulties
[0006] Although some ATrQ 2 The compound can be obtained by reacting Ga or In with the corresponding alkali metal polychalcogenide flux. This method (requires the use of a relatively large amount of polychalcogenides, and selenium, tellurium and their compounds are very toxic,) is not suitable for industrial production

Method used

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Embodiment Construction

[0012] 1. NaInS 2 Crystal growth:

[0013] Under the protection of high-purity nitrogen atmosphere, according to CaS:In 2 S 3 =1:1 molar ratio weighs CaS (99.5%) 0.020g (0.276mmol), In 2 S 3 (99.95%) 0.090g (2.76mmol) and NaCl (99.95%) 0.49g, after grinding and mixing evenly, press into tablets, put into a quartz tube with one end closed, and then seal it with an oxyhydrogen flame under dynamic vacuum. Place the reaction tube in a high-temperature reaction furnace, and raise the temperature to 650°C at a rate of 60°C / hr. After 15 hours of constant temperature, raise the temperature to 950°C at the same rate, keep the temperature for 120 hours, and cool down at a rate of 1°C / hr. to 800°C, and then quickly cooled down to room temperature. Take out the reaction tube, open it, soak the reaction mixture in distilled water, filter, and separate the yellow NaInS 2 crystals.

[0014] 2. NaGaS 2 Crystal growth:

[0015] Under the protection of high-purity nitrogen atmosphere, ...

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Abstract

Growing method of alkali metals, chalcogene compounds crystal of gallium or indium, involves synthesis and crystal growth of a type alkali metals, chalcogene compounds crystal of gallium or indium ATrQ2(A=Li,Na,K,Rb,Cs;Tr=Ga,In;Q=S,Se,Te)the synthesis and crystal growth. The purpose of this invention is to combine the synthesis of alkali metals, chalcogene compounds crystal of gallium or indium ATrQ2 and growth technology of flux crystal. Choose alkaline earth metal chalcogene compounds, chalcogene compounds of gallium or indium and proper alkaline metal halide flux for raw materials, through reaction flux method to prepare and grow alkali metals, gallium or indium sulfur compounds ATrQ2 crystal.

Description

technical field [0001] The present invention relates to a class of chalcogen compound ATrQ containing alkali metal, gallium or indium 2 Synthesis and crystal growth of (A=Li Na, K, Rb, Cs; Tr=Ga, In; Q=S, Se, Te). Background technique [0002] Materials with optically transparent windows extending into the far-infrared region (10–14 μm) are increasingly important for many modern optical and optoelectronic applications. Most ceramic materials that are transparent in the visible region contain light elements such as oxygen and boron, so there is vibrational excitation in the infrared region. Chalcogenides are excellent materials for long-wave transmission, and many chalcogenide materials have a transmission range from 0.5 μm to 14 μm. [0003] Ternary chalcogenide ATrQ containing alkali metal, gallium or indium 2 (A=Li, Na, K, Rb, Cs; Tr=Ga, In; Q=S, Se, Te) is an important class of optical ceramic materials with potential applications, such as infrared nonlinear optical cr...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B9/00
Inventor 曾卉一黄锦顺郭国聪郑发鲲董振超
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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