Preparation method of topological insulator structure
一种拓扑绝缘体、反应腔体的技术，应用在拓扑绝缘体结构的制备领域，能够解决未制造出、尚未制造出拓扑绝缘体等问题，达到大反常霍尔电阻、实现量子化反常霍尔效应、降低载流子浓度的效果
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0069] Example 1 (T=30mK, 5QL sample, back gate control)
[0070] The magnetic doped topological insulator quantum well film is Cr 0.15 (Bi 0.10 Sb 0.9 ) 1.85 Te 3 , the thickness is 5QL, and the insulating substrate 30 is an STO substrate.
[0071] The Hall curves of the topological insulator structure under different back gate voltages were measured. see Figure 6-9 , at a temperature of 30 milliKelvin (mK), the R of the sample AH With the back gate voltage (V b ) changes with changes. Figure 6-9 Hysteresis also appears in the middle Hall curve, and the sample has very good ferromagnetism. When 0V≤V b ≤10V, the R of the sample AH With V b The change is small when V b at -4.5V, R AH is 25.8 kΩ. where μ 0 H in H is the magnetization, and μ 0 is the vacuum magnetic permeability, and the unit T is Tesla.
Embodiment 2
[0072] Example 2 (T=1.5K, 4QL sample, back gate regulation)
[0073] The magnetic doped topological insulator quantum well film is Cr 0.22 (Bi 0.22 Sb 0.78 ) 1.78 Te 3 , the thickness is 4QL, and the insulating substrate 30 is an STO substrate.
[0074] see Figure 10 , at T=1.5K, 4QL Cr on STO(111) substrate 0.22 (Bi 0.22 Sb 0.78 ) 1.78 Te 3 different V b The Hall curve under Figure 10 shown. from Figure 10 It can be seen that the Hall curve has hysteresis, and the shape of the hysteresis loop is very "square", indicating that the sample has very good ferromagnetism. by V b regulation, can obtain higher R AH . R AH With V b The increase first increases and then decreases, when V b =45V, R AH It reaches the maximum, about 10 kΩ, which is close to 0.4 quantum resistance (25.8kΩ). Figure 11 is the sample at different V b under the reluctance curve for different V b Below, the magnetoresistance curves are all "butterfly-shaped", which also shows that t...
Embodiment 3
[0075] Example 3 (T=100mK, 4QL sample, back gate regulation)
[0076] The magnetic doped topological insulator quantum well film is Cr 0.22 (Bi 0.22 Sb 0.78 ) 1.78 Te 3 , the thickness is 4QL, and the insulating substrate 30 is an STO substrate.
[0077] The Hall curves of the topological insulator structure under different back gate voltages were measured. see Figure 13 , at a temperature of 100 milliKelvin (mK), the R of the sample AH With the back gate voltage (V b ) changes with changes. Figure 13 Hysteresis also appears in the middle Hall curve, and the sample has very good ferromagnetism. When 0V≤V b ≤20V, the R of the sample AH With V b little change in R AH Close to 0.6 quantum resistance (25.8kΩ). Specifically, when V b =10 V, R AH max, (R AH ) max =0.59h?e -2 , that is about 15.3kΩ. This value has far exceeded half of the quantum Hall resistance value, and is the largest abnormal Hall resistance that can be obtained in the world so far. Fi...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More 
PatSnap Eureka turns technology decisions into work you can execute. Powered by our Innovation Knowledge Graph, it runs expert workflows across engineering, life sciences, materials and intellectual property. Get your review-ready output in minutes.
