Carbon-coated class V-VI compound semiconductor nano sheet and preparation method thereof

A compound and semiconductor technology, which is applied in the field of topological insulators and thermoelectric materials and their preparation, can solve the problems that the electrical conductivity and the Seebeck coefficient of thermoelectric materials cannot be improved at the same time, the preparation method of topological insulators is complicated, and bulk materials cannot be prepared. Degradation phenomena, solving surface symmetry problems, avoiding the effect of adverse effects

Inactive Publication Date: 2013-06-19
NORTHEAST AGRICULTURAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] The present invention is to solve the complex preparation method of the existing V-VI compound topological insulator, the inability to prepare bulk materials, the surface instability, surface asymmetry, high surface roughness, and the inability to simultaneously conduct conductivity and Seebeck coefficient as thermoelectric materials. Improve the problem, thereby providing a carbon-coated V-VI compound semiconductor nanosheet and its preparation method

Method used

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  • Carbon-coated class V-VI compound semiconductor nano sheet and preparation method thereof
  • Carbon-coated class V-VI compound semiconductor nano sheet and preparation method thereof
  • Carbon-coated class V-VI compound semiconductor nano sheet and preparation method thereof

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specific Embodiment approach 1

[0032] Specific embodiment 1: The carbon-coated V-VI compound semiconductor nanosheet of this embodiment is composed of a nanosheet-shaped substrate and a carbon layer coated on its surface; wherein, the material of the nanosheet-shaped substrate is Bi 2 Te 3 , Sb 2 Te 3 、 Bi 2 Se 3 , Sb 2 Se 3 , including magnetic elements doped with Fe, Cr, Co or Ni, its thickness is less than 100nm, and its diameter is on the order of microns; the material of the carbon layer is amorphous carbon or graphene microflakes, with a thickness of 1-12nm, and can be Its outer surface supports Ag, Fe, Cr, Co, Ni or Cu nanoparticles.

specific Embodiment approach 2

[0033] Specific embodiment two: the preparation method of the carbon-coated V-VI group compound semiconductor nanosheet of the present embodiment is carried out according to the following steps:

[0034] 1. Weigh 0.02~0.1g of K(SbO)C 4 h 4 o 6 0.5H 2 O, 0.02~0.1g of Na 2 TeO 3 Powder, 1-5g of NaOH and 3-10g of glucose;

[0035] 2. Add 5 to 10 mL of deionized water to the raw materials weighed in step 1, stir to dissolve, mix, and add deionized water to dilute to 20 to 40 mL, then add 2 to 4 mL of N 2 h 4 ·H 2 O, transfer to a 50mL reactor, and react in an oven at 180-200°C for 5-8 hours to obtain a mixed solution;

[0036] 3. Wash the reacted mixed solution with deionized water until the pH value is 7, then wash it with absolute ethanol, and finally dry it in vacuum at a temperature of 20-40°C to obtain an amorphous carbon-coated V-VI compound semiconductor Nanosheets.

[0037] This embodiment includes the following beneficial effects:

[0038] 1. This embodiment us...

specific Embodiment approach 3

[0043] Specific embodiment three: the difference between this embodiment and specific embodiment two is: take the K(SbO)C of 0.02g in step one 4 h 4 o 6 0.5H 2 O, 0.02 g Na 2 TeO 3 powder, 1 g of NaOH and 3 g of glucose. Others are the same as in the second embodiment.

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Abstract

The invention discloses a carbon-coated class V-VI compound semiconductor nano sheet and a preparation method thereof, and relates to a topological insulator and a thermoelectric material and a preparation method thereof. The method solves the problems that the conventional preparation method for the class V-VI compound topological insulator is complex and cannot be used for preparing bulk materials, the surface of the topological insulator is instable, unsymmetrical and high in roughness and the electric conductivity and the Seebeck coefficient of the topological insulator serving as the thermoelectric material cannot be simultaneously improved. The carbon-coated class V-VI compound semiconductor nano sheet consists of a nano sheet matrix and a carbon layer coated on the surface of the nano sheet matrix. The amorphous carbon-coated class V-VI compound semiconductor nano sheet is prepared through a one-step hydrothermal method; and a grapheme-coated class V-VI compound semiconductor nano sheet is prepared through a two-step hydrothermal method. The surface of the prepared nano sheet is stable, symmetrical and low in roughness, and the electric conductivity and the Seebeck coefficient of the nano sheet can be simultaneously improved. The invention is applied in the field of preparation of topological insulators and thermoelectric materials.

Description

technical field [0001] The invention relates to a topological insulator, a thermoelectric material and a preparation method thereof. Background technique [0002] Topological insulators are a new class of materials with special quantum properties. Its special two-dimensional structure and strong spin-orbit coupling effect make it have an extraordinary electronic structure. Its bulk electronic structure is an insulator with an energy gap, while its surface is a metallic state without an energy gap. That is to break the concept of "metal" and "insulator" in the usual sense. It is internally insulated, but the interface has a spin-related metallic conductive channel. This means that topological insulators can separate electrons with different spin orientations, creating spin currents. It has long been discovered that electrons have two kinds of motion, charge and spin, but in traditional circuits or semiconductor electronic devices, spin-up electrons and spin-down electrons ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/18
Inventor 周楠
Owner NORTHEAST AGRICULTURAL UNIVERSITY
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