87results about How to "Improve Seebeck coefficient" patented technology

The invention provides a preparation method of a composite, comprising: providing a suspension of a solid thermoelectric material which disperses in a liquid medium, wherein the solid thermoelectric material is filled and/ or doped with skutterudite, half-Heusler alloy, a cagelike material and other thermoelectric ordered alloy or thermoelectric disordered alloy or a thermoelectric intermetallic compound; contacting the suspension with a solution formed by dissolving a metallic oxide precursor into solvent to obtain a reaction mixture; forming a metallic oxide by hydrolyzing the metallic oxide precursor in the presence of water; obtaining the compound of the metallic oxide and the solid thermoelectric material which are evenly dispersed in liquid phase; and separating the compound of the metallic oxide and the solid thermoelectric material from the liquid phase to obtain the separated composite. The invention can dramatically improve the thermoelectric performance of the composite.

The invention discloses a preparation method of thermoelectric material Ag compound (Ca(1-X)LaX)3Co4O9, and relates to the preparation method of Ag compound oxide thermoelectric material. The invention resolves the problems that the distribution of Ag phases in an Ag compound Ca-Co-O-based oxide is not even, the size of Ag phase particles is large, thereby leading that current carrier transporting loop is formed between Ca-Co-O-based oxide crystal grains, and leading Seebeck coefficient of the Ag compound Ca-Co-O-based oxide to be reduced evidently, and the existence of lanthanon results in decreasing the electrical conductivity of the Ca-Co-O-based oxide. The preparation methods comprises that firstly, calcium nitrate, cobalt nitrate and lanthanum nitrate are dissolved in distilled water; secondly, citric acid is add; thirdly, silver nitrate is added; fourthly, organic monomers and network agent are added; fifthly, initiating agent is added; sixthly, microwave dry is performed; seventhly, calcination is operated; eighthly, the spark plasma sintering is performed. The distribution of Ag phases in Ag compound (Ca(1-X)LaX)3Co 4O9 prepared by the methods of the invention is even, the size of the Ag phase particles is smaller than 500 nm, and the current carrier transporting loop is not formed. The Seebeck coefficient of the Ag compound (Ca(1-X)LaX)3Co4O9improves 1.7 percent to 4.9 percent than that of the Ca3Co4O9, the electrical conductivity improves 13.3 percent to 38.9 percent, and the power factor improves 21.6 percent to 35.1 percent.

The invention provides a composite material. The composite material comprises a skutterudite filling substrate shown as the following formula (I): IyCo4Sb12 (1), wherein I is at least one of Yb, Eu, Ce, La, Nd, Ba and Sr, and y is less than 1 and not more than 0.05. The composite material further comprises GaSb particles distributed in the skutterudite filling substrate, wherein the composite material contains 0.05-5 mol% GaSb particles. Compared with the thermoelectric material substrate without compounding a nanometer GaSb phase, the Seebeck coefficient of the composite material is improved to a large extent, the total heat conductivity is slightly reduced, the thermoelectric performance index ZT value is greatly increased in the whole high temperature and low temperature zone range, and the thermoelectric conversion efficiency of the material is greatly improved. The composite material has simple process and favorable industrialization prospect and is easy to control.

The invention discloses a carbon-coated class V-VI compound semiconductor nano sheet and a preparation method thereof, and relates to a topological insulator and a thermoelectric material and a preparation method thereof. The method solves the problems that the conventional preparation method for the class V-VI compound topological insulator is complex and cannot be used for preparing bulk materials, the surface of the topological insulator is instable, unsymmetrical and high in roughness and the electric conductivity and the Seebeck coefficient of the topological insulator serving as the thermoelectric material cannot be simultaneously improved. The carbon-coated class V-VI compound semiconductor nano sheet consists of a nano sheet matrix and a carbon layer coated on the surface of the nano sheet matrix. The amorphous carbon-coated class V-VI compound semiconductor nano sheet is prepared through a one-step hydrothermal method; and a grapheme-coated class V-VI compound semiconductor nano sheet is prepared through a two-step hydrothermal method. The surface of the prepared nano sheet is stable, symmetrical and low in roughness, and the electric conductivity and the Seebeck coefficient of the nano sheet can be simultaneously improved. The invention is applied in the field of preparation of topological insulators and thermoelectric materials.

The invention provides a method for improving Seebeck coefficient of a carbon fiber cement-based composite material. According to the method, Fe2O3 and/or Bi2O3 powders are added during preparing the carbon fiber cement-based composite material; a linear relation is generated between the thermoelectromotive force and the temperature difference of the carbon fiber cement-based composite material, and the Seebeck coefficient of the carbon fiber cement-based composite material is increased along with the increasing of the quantity of added Fe2O3 and/or Bi2O3 powders, so that the obtained carbon fiber cement-based composite material is high in Seebeck coefficient, stable in thermoelectric property, high in mechanical property, and simple in preparation technology, and avoids the problem that the Seebeck coefficient of the composite material is unstable due to the application of lightweight aggregate, steel slag or crystalline flake graphite; the carbon fiber is free from the technical processing of bromine intercalation, so that the problem due to environmental pollution caused by bromine vapor can be avoided, and the problem that the mechanical property of the cement-based composite material is reduced due to adoption of the lightweight aggregate, the steel slag or the intercalation crystalline flake graphite also can be avoided; and the cement-based composite material can be uniformly dispersed in a cement matrix.

The invention discloses a high-spatial resolution flexible film thermocouple temperature sensor. The sensor comprises a flexible insulating substrate as well as a positive electrode thermocouple filmarray and a negative electrode thermocouple film array sequentially deposited on the surface of the flexible insulating substrate; the positive electrode thermocouple film array and the negative electrode thermocouple film array have a plurality of overlapping regions; the overlapping regions of the positive electrode thermocouple film array and the negative electrode thermocouple film array constitute thermal nodes; the surface of the flexible insulating substrate is divided into a sensitive region and a non-sensitive region; the thermal nodes are located in the sensitive region; the end portions of each positive electrode thermocouple film in the positive electrode thermocouple film array and the end portions of each negative electrode thermocouple film in the negative electrode thermocouple film array are connected with cold ends respectively; and the cold ends are located in a non-sensitive region. The sensor can accurately measure the temperature of a plurality of points to be measured under a condition that the number of sensors is not increased. The sensor has the advantages of simple structure, high reliability, high durability and low cost.

The invention provides a preparation method for thermoelectric composite material of polyaniline in-situ polymerization clad PEDOT modified nano-carbon, belongs to the field of thermoelectric polymers, and aims at solving the problem of low thermoelectric performance of existing polyaniline thermoelectric polymer material. The preparation method comprises the steps that firstly, an organic solvent and nano-carbon material are added in a PEDOT:PSS solution, and acid is added and stirring is performed so that suspending liquid is obtained; secondly, aniline is added to the PEDOT modified nano-carbon material suspending liquid, and ultrasonic stirring reaction is performed under temperature of 0-30 DEG C so that the PEDOT modified nano-carbon material suspending liquid having aniline is obtained; and thirdly, a proton acid solution having an oxidizing agent is dropped in the suspending liquid, and compression molding is performed after stirring reaction so that the thermoelectric composite material is obtained. Preparation time of the thermoelectric composite material of polyaniline in-situ polymerization clad PEDOT modified nano-carbon is short, the PEDOT:PSS content is low, the percolation threshold of the nano-carbon particles in the base is low and the thermoelectric performance is great.

The invention discloses a Cu1.8S-based polycrystalline block thermoelectric material and a preparation method thereof. The thermoelectric material is prepared from raw materials including Cu1.8S and adoping agent X2Y3, wherein the mol ratio of the Cu1.8S to the doping agent X2Y3 is 1 to (0.005 to 0.07). The thermoelectric material prepared by the preparation method has the advantages that on onehand, In is doped, electrons are introduced and the concentration of current carriers is optimized; point defects are introduced and scattering of short-wavelength phonons is remarkably enhanced, so that the high-temperature thermal conductivity is reduced; on the other hand, surplus In2S3 forms a special nano-structure, i.e., the surplus In2S3 is attached to the edge of an air hole; the thermal conductivity of the material can be greatly reduced by the structure and the thermoelectric performance of a Cu1.8S material is optimized. The preparation method of the Cu1.8S-based polycrystalline block thermoelectric material, disclosed by the invention, has the advantages of low cost of needed raw materials, simple equipment, easiness for operation and remarkable effect.

The invention discloses a method of preparing an n-type counterfeit ternary erbium-doped thermoelectric material by utilizing a mechanical alloying cold pressing sintering method, and relates to a method of preparing a thermoelectric material. The invention solves the technical problems of easiness in separation, poor mechanical property and high material cost of the conventional thermoelectric material. The method comprises the following steps of: 1, mixing a simple substance Bi, a simple substance Sb, a simple substance Te and a simple substance Se, adding a rare earth element Er, and ball-milling to obtain alloy powder; 2, cold-pressing the alloy powder to a block at room temperature; 3, placing the cold-pressing block obtained in the step 2 into a high-temperature-resistant glass tube, sintering, and cooling to room temperature along with a furnace so as to obtain the n-type counterfeit ternary erbium-doped thermoelectric material. The material, prepared by the method in the invention, has a thermoelectromotive force rate close to an oriented crystal, according to the national departmental standard, the Seebeck coefficient of the material is tested to reach 200 muVK<-1>, the conductivity is 55 omega<-1>cm<-1>, and a power factor is close to 2 muWcm<-1>K<-2>.

The invention discloses preparation methods for a thermoelectric colloid material and a thermoelectric device, and a product. After a polymer solution is mutually mixed with a redox electrolyte, a product is subjected to curing process to prepare the thermoelectric colloid; the thermoelectric colloid regulates and controls a thermoelectric-chemical Seebeck coefficient and thermoelectric output performance by changing the redox electrolyte; the thermoelectric colloid has flexible and tensile characteristics, so that the thermoelectric colloid can be prepared into a required solid-state shape through a mould; the solid-state thermoelectric colloid is applicable to large-area packaging and integrating; the thermoelectric device is prepared by packaging and integrating the thermoelectric colloid and electrodes; and by adoption of the thermoelectric device, low-dimension heat energy can be effectively converted into electric energy, so that the thermoelectric device has wide application prospect in flexible electronic devices and wearable equipment.

The invention discloses a D-A type conjugated polymer organic thermoelectric thin film material and a preparation method thereof. The chemical structural formula of the organic thermoelectric thin film material is as shown in specification, wherein X is one of oxygen atoms, thiophene and thienothiophene, and n is an integer from 40 to 70. The provided organic thermoelectric thin film material is easily dissolved in common organic solvents such as tetrahydrofuran, dichloromethane, trichloromethane and chlorobenzene, and therefore, the organic thermoelectric thin film material has good solutionmachinability. In addition, the D-A type conjugated polymer organic thermoelectric thin film material further has high Seebeck coefficients and thermoelectric property, and meanwhile also has good flexibility, and thus, the organic thermoelectric thin film material is expected to be used in flexible wearable thermoelectric equipment; and moreover, the preparation method of the D-A type conjugatedpolymer organic thermoelectric thin film material is simple and easy to implement, and the cost is low.

The invention discloses preparation of a fluorine-functionalized covalent organic framework material and an application technology of the material in the thermoelectric field. Organic micromolecular elements are polymerized orderly through a Schiff-base condensation reaction with a solvent synthesis method to form a covalent bond connected crystal structure material. The covalent organic frameworkpolymer is synthesized for the first time, and the material has the advantages that the material has permanent open pore structure and very good thermal stability, tolerates iodine doping, shows ultrahigh seebeck coefficients and good thermoelectric performance at the room temperature for the first time and the like.

A cement concrete pavement energy conversion device disclosed by the invention is based on a graphene reinforced cement-based composite material, can convert heat energy into electric energy under theaction of temperature difference by utilizing the thermo-electric effect of the graphene reinforced cement-based composite material, and is suitable for energy collection and conversion of cement concrete pavements. The invention further provides a preparation method of the cement concrete pavement energy conversion device, the dried graphene-reinforced cement-based composite material is used forprocessing and preparing the conversion units, the upper surfaces and the lower surfaces of the conversion units are coated with the conductive silver paste, and the conductive copper nets are inserted into the conversion units to prepare the electrodes; the positive conductive copper net and the negative conductive copper net are connected with the positive electrode and the negative electrode of an external circuit, and the outer surface of the structure is coated with epoxy resin by a roller to finish a anti-seepage treatment. Heat energy in the cement pavement slab can be converted into electric energy, so that energy conversion of the cement concrete pavement is achieved, and the device has the advantages of being high in Seebeck coefficient, stable in thermo-electric performance, simple in preparation process, expandable in structure and coordinated with deformation of the cement pavement slab.

The invention discloses a method for preparing a SiGe thermoelectric material. According to the method, Si powder, Ge powder, B powder or P blocks are mixed according to a determined molar ratio; obtained mixtures are loaded into hard steel ball mill tanks under the protection of an Ar inert atmosphere; ball-milling and alloying are performed on the mixtures through using a planetary ball mill, sothat single-phase SiGe thermoelectric material powder is obtained; the single-phase SiGe thermoelectric material powder is subjected to discharge plasma sintering at 1150 DEG C, so that dense blockscan be obtained. The P type and N type SiGe alloy prepared by the method for preparing the SiGe thermoelectric material of the present invention have high electrical conductivity, high Seebeck coefficients and high power factors. The method for preparing the SiGe thermoelectric material of the invention has the advantages of high synthesis speed, simplicity, convenience, high efficiency and wide application prospect.

The invention relates to a preparation method for a composite aerogel thermoelectric material. With the preparation method adopted, the technical problems of conductivity increase during the compounding of PEDOT, a carbon material and an inorganic material and the decrease of the overall conductivity of aerogel can be solved. The method includes following steps that: (1) bacterial cellulose and EDOT monomer are mixed in an aqueous solution at a mass ratio of 1: (9-11), and an obtained solution is fully stirred, and a 1.35 to 3.51 mmol of Fe<3+> aqueous solution is added into the solution, andthe solution is fully stirred for 24 to 48 hours, and is washed with HCL and deionized water, so that a composite material mixed liquid can be prepared; (2) the prepared solution is mixed with nano-conductive fillers with different proportions of content, stirring and ultrasonic treatment are carried out, so that an obtained solution is frozen at -10 to -50 DEG C, and the solution is subjected tovacuum freezing and drying, so that the aerogel can be obtained; and (3) the aerogel obtained in the step (2) is treated with a powder tableting machine, so that a BC-PEDOT multi-component composite sheet having a pore structure is obtained. The method of the invention is widely used in the field of thermoelectric material preparation.

The invention discloses a production method for a high-temperature quantum well super-lattice thick film thermoelectric material. The production method comprises the following steps: growing a thermoelectric material on a porous silicon, porous aluminium oxide or doped silicon substrate through an atomic layer deposition method, wherein the thermoelectric material can grow from the inner walls of pores and then grow radially layer by layer to the centres of the pores so as to generate a thick film super-lattice thermoelectric material. A base thermoelectric material is SiGe. According to the production method for the high-temperature quantum well super-lattice thick film thermoelectric material, the super-lattice thermoelectric material which is applicable to high-temperature application is synthesized quickly through a chemical method by utilizing an atomic layer deposition method and taking a porous template as a substrate, so that high merit figure and high thermoelectric conversion efficiency are realized. The high-temperature thermoelectric material can be quickly produced on a doped or curved conductive substrate under a non-vacuum condition; the thermoelectric material has set thickness and a quantum well super-lattice structure, and is particularly suitable for high temperature, that is, the using temperature range is 700 to 1,100 DEG C.

The invention provides a high-performance BiCuSeO-base thermoelectric material and a preparation method thereof. The thermoelectric material has a chemical formula I: Bi<1-x-Y>A<y>Cu<1-x>SeO, whereinA is selected from Ca, Sr, Ba or Pb0<x<=0.04, and 0<=y<=0.15. According to the thermoelectric material provided by the invention, Bi and Cu double vacancies are introduced, and then an interlayer charge transfer channel is constructed; after an element A (A is Ca, Sr, Ba or Pb) is doped into a Bi site, the conductivity of the material is remarkably improved by means of the interlayer charge transfer channel constructed by Bi/Cu double vacancies; meanwhile, a larger Seebeck coefficient is maintained, so that the thermoelectric performance of the material is improved.

The invention relates to the field of composite materials, in particular to a glass fiber/Bi2Te3 thermoelectric thin-film composite material and a preparation method thereof. The composite material can be applied to the aspects of a flexible energy device, a miniature sensor and the like. The composite material comprises a glass fiber substrate and a Bi2Te3 thermoelectric thin-film layer, wherein the Bi2Te3 thermoelectric thin-film layer is evenly deposited on the surface of the cellulose paper substrate to form a core-shell structure; the diameters of glass fibers are 5-10 microns; the thickness of the Bi2Te3 thermoelectric thin-film layer is 1-2 microns; and the film layer is compact in structure and good in combination with the surfaces of the glass fibers. The glass fiber/Bi2Te3 thermoelectric thin-film composite material is prepared by an unbalanced magnetron deposition technology; a Bi2Te3 deposited layer has a compact structure of nanoscale grains and is uniform and adjustable in thickness; and the thermoelectric properties are close to those of a commercial block material. Due to the scale effect of the thin-film material, the fiber/thermoelectric composite material demonstrates good bending resistance and can be applied to the fields of the flexible energy device, the miniature sensor and the like.

The invention relates to a five element n-type thermoelectric material realizing powder alloy sintering phase transformation based on crystal topology and a preparation method thereof. The chemical formula of the n-type thermoelectric material is Bi<2-x-y>Sb<x>S<y>Te<3-z>Se<z>, wherein the x is greater than or equal to 0.74 and less than or equal to 1.2, y is greater than or equal to 0.04 and lessthan or equal to 0.06, z is greater than or equal to 0.2 and less than or equal to 0.45. Compared with other n-type thermoelectric materials, the five element n-type thermoelectric material disclosedby the invention undergoes the transformation of p-type alloy to p-type powder alloy embryo material to n-type thermoelectric material in the preparation process, therefore, the finally obtained fiveelement n-type thermoelectric material has the advantages of high Seebeck coefficient, high conductivity, low thermal conductivity, high ZT value and excellent thermoelectric performance.

The invention discloses an organic composite thermoelectric film and a preparation method thereof, wherein the organic thermoelectric thin film comprises an organic thermoelectric material having thechemical formula (shown in the description), wherein n is 2, 3 or 5, and m is a natural number between 40 and 70; The organic thermoelectric material has high Seebeck coefficient and thermoelectric performance, and also has high carrier mobility, which makes the organic composite thermoelectric film prepared by the invention have excellent air stability and thermal stability; The preparation method provided by the invention is simple, easy to realize and low in cost.

The invention provides a preparation method of a graphene oxide/molybdenum disulfide composite thermoelectric material, which comprises the steps of S1) mixing graphene oxide and molybdenum disulfidenanosheets in water, and performing ultrasonic treatment to obtain a mixed system; S2) coating the mixed system on a base material, drying at a low temperature to obtain the graphene oxide/molybdenumdisulfide composite thermoelectric material; or filtering the mixed system to obtain the graphene oxide/molybdenum disulfide composite thermoelectric material. Compared with the prior art, the molybdenum disulfide nanosheet layer is added into the graphene oxide nanosheet layer, the energy filtering effect in the obtained composite thermoelectric material can be improved, the electric conductivityof the composite material can be continuously maintained, the thermal conductivity can be continuously reduced, the Seebeck coefficient of the composite thermoelectric material is improved, and the ZT value of the composite thermoelectric material is greatly increased. In addition, the graphene oxide/molybdenum disulfide composite thermoelectric material obtained according to the invention has adjustable P-N thermoelectric characteristics.

A temperature-controllable oxide thermoelectric material, a preparing method thereof and applications of the oxide thermoelectric material are disclosed. The oxide thermoelectric material is prepared by preparing metal salts containing Mn<2+>, Fe<3+> and Zn<2+> into a solution, adding dropwise the solution into an alkali solution of carbon nanotubes, reacting, performing suction filtration, washing to obtain carbon nanotube-Mn<1-x>Zn<x>Fe2O4 composite powder, and finally sintering, wherein the objective of precise temperature controlling is achieved by controlling the adding amount of the carbon nanotubes, and the x is less than 1. The composite material formed by adding the carbon nanotubes into a manganese-zinc-iron ferrite has increased conductivity, a high Seebeck coefficient and low thermal conductivity. The composite material of the carbon nanotubes and the manganese-zinc-iron ferrite can control the temperature rising situation of the manganese-zinc-iron ferrite under actions of an alternating magnetic field through controlling the adding amount of the carbon nanotubes, thus achieving high thermoelectric performance and achieving a precise temperature controlling objective. The oxide thermoelectric material, the method and the applications have advantages of a simple process, a low cost, simple operation, short preparation time, a small grain size of the prepared material, and the like.

The invention discloses a thermoelectric material and a manufacture technology thereof, and particularly relates to a polyimide Bi2Te3 thermoelectric film composite material and a manufacture method thereof. The thermoelectric material is good in size and good in thermoelectric performance.