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Thermoelectric material and preparation method thereof

A thermoelectric material, cu1-xagxga1-yinyte2 technology, applied in the field of thermoelectric materials and their preparation, can solve problems such as difficulty in maintaining thermal stability, and achieve the effect of improving thermal conductivity

Active Publication Date: 2020-01-14
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, although undoped CuGaTe has been reported at 950K 2 The thermoelectric figure of merit of semiconductors can reach 1.4, but the uncertainty of this data lies in the fact that the material is already near the phase transition temperature at 950K, and it is difficult to maintain its thermal stability and maintain its deformation as a bulk material

Method used

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  • Thermoelectric material and preparation method thereof
  • Thermoelectric material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0034] A p-type chalcopyrite-structured thermoelectric material with a chemical composition of Cu 0.6 Ag 0.4 Ga 0.4 In 0.6 Te 2 , its preparation process includes:

[0035] (1) Cu, Ag, Ga, In and Te elemental powders with a purity greater than 99% are expressed according to the chemical formula Cu 0.6 Ag 0.4 Ga 0.4 In 0.6 Te 2 Weigh the stoichiometric ratio, mix the weighed powder and seal it into a vacuum quartz tube, then put the vacuum quartz tube into a muffle furnace for melting, the melting temperature is 900-1300°C, and the melting time is 5-48h. For example, the preferred smelting temperature is 1050°C, and the preferred smelting time is 24h, and the obtained composition is Cu 0.6 Ag 0.4 Ga 0.4 In 0.6 Te 2 melting ingot;

[0036] (2) Grind the melted ingot obtained in step (1) into powder first, then perform dry ball milling on the powder to make the powder nanometer, the dry ball milling time is 0.5-100h, if the preferred dry ball milling time is 1h, the...

Embodiment 2

[0039] A p-type chalcopyrite-structured thermoelectric material with a chemical composition of Cu 0.65 Ag 0.35 Ga 0.4 In 0.6 Te 2 , its preparation process includes:

[0040] (1) Cu, Ag, Ga, In and Te elemental powders with a purity greater than 99% are expressed according to the chemical formula Cu 0.65 Ag 0.35 Ga 0.4 In 0.6 Te 2 Weigh the stoichiometric ratio, mix the weighed powder and seal it into a vacuum quartz tube, then put the vacuum quartz tube into a muffle furnace for melting, the melting temperature is 900-1300°C, and the melting time is 5-48h. For example, if the preferred melting temperature is 1050°C and the melting time is 24 hours, the obtained composition is Cu 0.65 Ag 0.35 Ga 0.4 In 0.6 Te 2 melting ingot;

[0041] (2) Grind the melted ingot obtained in step (1) into powder first, then perform dry ball milling on the powder to make the powder nanometer, the dry ball milling time is 0.5-100h, if the preferred dry ball milling time is 1h, then ...

Embodiment 3

[0044] A p-type chalcopyrite-structured thermoelectric material with a chemical composition of Cu 0.7 Ag 0.3 Ga 0.4 In 0.6 Te 2 , its preparation process includes:

[0045] (1) Cu, Ag, Ga, In and Te elemental powders with a purity greater than 99% are expressed according to the chemical formula Cu 0.7 Ag 0.3 Ga 0.4 In 0.6 Te 2 Weigh the stoichiometric ratio, mix the weighed powder and seal it into a vacuum quartz tube, then put the vacuum quartz tube into a muffle furnace for melting, the melting temperature is 900-1300°C, and the melting time is 5-48h. For example, if the preferred melting temperature is 1050°C and the melting time is 24 hours, the obtained composition is Cu 0.7 Ag 0.3 Ga 0.4 In 0.6 Te 2 melting ingot;

[0046] (2) Grind the melted ingot obtained in step (1) into powder first, then perform dry ball milling on the powder to make the powder nanometer, the dry ball milling time is 0.5-100h, if the preferred dry ball milling time is 1h, then The na...

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Abstract

The invention discloses a thermoelectric material of a p-type chalcopyrite structure with a composition of Cu1-xAgxGa1-yInyTe2, and the highest thermoelectric figure of merit ZT of the thermoelectricmaterial is up to 1.64 at 773K, so that the application efficiency of the thermoelectric material in the aspects of waste heat power generation and thermoelectric refrigeration can be greatly improved. Meanwhile, the preparation method of the thermoelectric material also has the advantages of simple and convenient process, easiness in large-scale production, high practicability and the like.

Description

technical field [0001] The invention relates to the technical field of energy materials, in particular to a thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric devices can convert heat energy and electric energy into each other, which is characterized by no noise and no pollution, and is very suitable for recycling waste heat. The essence of thermoelectric conversion technology is a technology that utilizes the Seebeck effect (Seebeck) and Peltier effect (Peltier effect) of semiconductor thermoelectric materials to realize direct mutual conversion of thermal energy and electrical energy. [0003] The thermoelectric figure of merit ZT is a dimensionless parameter used to characterize the thermoelectric conversion efficiency of thermoelectric materials, where Z is called the thermoelectric figure of merit or figure of merit, and T is the temperature: [0004] ZT=S 2 σT / κ [0005] In the formula, S is the thermoelectric pote...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16H01L35/34C22C1/04C22C30/02
CPCC22C30/02C22C1/047H10N10/852H10N10/01
Inventor 张建黄露露宋春军秦晓英李地王玲辛红星
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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