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Method for manufacturing graphene/polyaniline thermoelectric thin film

A thermoelectric film and polyaniline technology, which is applied in the manufacture/processing of thermoelectric devices, junction lead-out materials of thermoelectric devices, electrolytic coatings, etc., can solve the problems of low figure of merit, low thermoelectric conversion efficiency, etc., and achieve low cost of raw materials , The effect of short preparation cycle and mild conditions

Active Publication Date: 2013-09-18
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The present invention aims to solve the technical problem that the existing organic thermoelectric material has a low figure of merit (ZT value), resulting in low thermoelectric conversion efficiency, thereby providing a method for preparing a graphene / polyaniline thermoelectric film

Method used

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  • Method for manufacturing graphene/polyaniline thermoelectric thin film
  • Method for manufacturing graphene/polyaniline thermoelectric thin film
  • Method for manufacturing graphene/polyaniline thermoelectric thin film

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Experimental program
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specific Embodiment approach 1

[0032] Specific embodiment one: the preparation method of a kind of graphene / polyaniline thermoelectric film in the present embodiment is carried out according to the following steps:

[0033] 1. Preparation of graphene oxide powder:

[0034] 1) Pre-oxidation: Put the graphite in an oven and dry it at 60°C to 100°C for 1h to 3h to obtain graphite powder. 2 S 2 o 8 , P 2 o 5 Mix well with concentrated sulfuric acid in a three-necked flask, heat the three-necked flask to 60°C-100°C, then add dried graphite powder and mix evenly, at this time the solution is black, and the color of the solution will gradually change after continuing to keep warm for 20min-40min It is blue-black, keep warm for 4h-10h under the heating condition of 60°C-100°C, then cool naturally to room temperature, add deionized water to the solution cooled to room temperature to dilute, oscillate ultrasonically for 10min-30min, and use a pore size of 0.1μm ~5 μm filter membrane is subjected to vacuum filtra...

specific Embodiment approach 2

[0052] Specific embodiment two: this embodiment is different from specific embodiment one: the graphite powder described in step one 1) and K 2 S 2 o 8 The mass ratio is 1: (0.5~0.75), the graphite powder described in step 1) and P 2 o 5 The mass ratio of the graphite powder is 1: (0.5~0.75), and the mass of the graphite powder described in step 1) and the volume ratio of the concentrated sulfuric acid are 1g: (1mL~2mL). Others are the same as in the first embodiment.

specific Embodiment approach 3

[0053] Specific embodiment three: this embodiment is different from one of specific embodiment one or two: the mass ratio of expanded graphite described in step one 2) and potassium permanganate is 1: (2~10), step one 2) The mass ratio of expanded graphite and sodium nitrate described in is 1: (0.5~1.0), and the quality of sodium nitrate described in step 2) and the volume ratio of concentrated sulfuric acid are 1g: (45mL~55mL). Others are the same as those in the first or second embodiment.

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Abstract

The invention discloses a method for manufacturing a graphene / polyaniline thermoelectric thin film, and relates to a method for manufacturing a thermoelectric thin film. The method for manufacturing the graphene / polyaniline thermoelectric thin film includes firstly, manufacturing graphene oxide powder; secondly, manufacturing graphene oxide / aniline mixed solution; thirdly, manufacturing a graphene / polyaniline composite powder material; fourthly, manufacturing the thermoelectric thin film by means of oriented deposition. The method has the advantages that the technical problem of low thermoelectric conversion efficiency due to a low figure of merit (a ZT value) of an existing organic thermoelectric material is solved, and the method can be applied to industrial temperature differential power generation.

Description

technical field [0001] The invention relates to a method for preparing a thermoelectric thin film. Background technique [0002] Thermoelectric materials are functional materials that convert thermoelectric energy into each other. Its research and development have a history of nearly two hundred years. After experiencing a trough period of 30 years, with the development of semiconductor technology, it has once again entered people's attention. According to the type of composition, it can be divided into two categories: inorganic and organic thermoelectric materials. Inorganic thermoelectric materials (such as Bi 2 Te 3 , PbTe, SiGe, etc.) have high electrical conductivity and Seebeck coefficient, but its high cost, complicated processing technology, and toxicity are not conducive to practical application. Organic thermoelectric materials (such as polymer thermoelectric materials) are abundant in resources, easy to process, and have low thermal conductivity, but their See...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/24C25D15/00C08G73/02C08K9/02C08K3/04H10N10/01H10N10/856
Inventor 李垚杨永柠左璠雨王佳禹丛庆褚建光王金龙
Owner HARBIN INST OF TECH
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