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40results about How to "Good solution processability" patented technology

Polyphenyl ether thioether sulfoxide and preparation method thereof

The invention discloses a preparation method of polyphenyl ether thioether sulfoxide. The polyphenyl ether thioether sulfoxide comprises the following ingredients: 4,4'-dyhydroxy diphenyl sulfide and 4,4'-dihalogen diphenylsulfoxide as the reaction monomer of which the mole ratio is 1: 1.02, 1.1-2.5mole / mole of 4,4'-dyhydroxy diphenyl sulfide as the assistant, 0.1-0.5 mole / mole of 4,4'-dyhydroxy diphenyl sulfide as the catalyst, 1000-2000ml / mole of 4,4'-dyhydroxy diphenyl sulfide as the solvent, and 300-500ml / mole of 4,4'-dyhydroxy diphenyl sulfide as the azeotropy dehydrating agent. The process comprises the following steps of: (1) adding the ingredients into a reaction contain and stirring under the protection of nitrogen at the room temperature, rising the temperature, heating, and dehydrating, ending the dehydration when the temperature reaches 130-150 DEG C, subsequently rising the temperature to 170-220 DEG C and carrying out the polymerization reaction, when the reaction is ended, cooling naturally to the room temperature and stopping stirring; and (2) pouring the mixture liquid formed by the polymerization reaction into precipitating agent, precipitating and filtering so as to obtain a filter cake, washing the filter cake and drying in vacuum so as to obtain the polyphenyl ether thioether sulfoxide; and the structural formula is: (FORMULA).
Owner:SICHUAN UNIV

Electron transport material and its preparation method and light-emitting diode

ActiveCN109935714BImprove solubilityImprove the problem that the current density is too high relative to the hole layerSolid-state devicesSemiconductor/solid-state device manufacturingMetal oxide nanoparticlesElectron injection
The invention belongs to the technical field of materials, and in particular relates to an electron transport material, a preparation method thereof, and a light-emitting diode. The electron transport material includes metal oxide nanoparticles and PMMA, and the metal oxide nanoparticles and the PMMA are connected by an alkoxysilane coupling agent containing an amino group at the end of the non-alkoxy carbon chain; wherein, One end of the silane coupling agent passes through ‑Si(O‑) 3 It is connected with the metal oxide nanoparticles, and the other end of the silane coupling agent is connected with the PMMA through -NH-CO-. The electron transport material is used to prepare the electron transport layer, which can improve the phenomenon of uneven injection of electrons and holes in light-emitting diode devices. By adjusting the injection ratio of electrons and holes in the light-emitting layer, the effect of balancing charge injection can be achieved. The electron transport layer with adjustable electron injection ability can increase the recombination rate of holes and electrons in the light-emitting layer and improve the luminous efficiency.
Owner:TCL CORPORATION

Organic semiconductor material, its preparation method and application

The invention discloses a novel organic semiconductor material, a preparation method, and applications thereof. The organic semiconductor has a structural formula, which is represented in the description. The preparation method comprises the following steps: taking naphthalene or derivatives containing a naphthalene structure as the primary raw material, orderly subjecting the primary raw material to 1st and 5th position functionalization reactions, then subjecting the reaction product to carry out coupling reactions with aromatic groups so as to obtain a compound, which contains a phenolic hydroxyl group and takes 1,5-diaryl naphthalene as the core, and then subjecting the compound to carry out ring-closure reactions so as to obtain the novel organic semiconductor material. The novel organic semiconductor material has a good environmental stability and a photoelectric performance, at the same time, has a very good solution processing performance, is easy to prepare and carry out a post modification treatment, and can be widely applied to fields of various semiconductor electronic and photoelectric devices such as organic light emitting diodes, organic thin film transistors, organic light sensors, and the like.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI

Polyphenyl ether thioether sulfoxide and preparation method thereof

The invention discloses a preparation method of polyphenyl ether thioether sulfoxide. The polyphenyl ether thioether sulfoxide comprises the following ingredients: 4,4'-dyhydroxy diphenyl sulfide and 4,4'-dihalogen diphenylsulfoxide as the reaction monomer of which the mole ratio is 1: 1.02, 1.1-2.5mole / mole of 4,4'-dyhydroxy diphenyl sulfide as the assistant, 0.1-0.5 mole / mole of 4,4'-dyhydroxy diphenyl sulfide as the catalyst, 1000-2000ml / mole of 4,4'-dyhydroxy diphenyl sulfide as the solvent, and 300-500ml / mole of 4,4'-dyhydroxy diphenyl sulfide as the azeotropy dehydrating agent. The process comprises the following steps of: (1) adding the ingredients into a reaction contain and stirring under the protection of nitrogen at the room temperature, rising the temperature, heating, and dehydrating, ending the dehydration when the temperature reaches 130-150 DEG C, subsequently rising the temperature to 170-220 DEG C and carrying out the polymerization reaction, when the reaction is ended, cooling naturally to the room temperature and stopping stirring; and (2) pouring the mixture liquid formed by the polymerization reaction into precipitating agent, precipitating and filtering so as to obtain a filter cake, washing the filter cake and drying in vacuum so as to obtain the polyphenyl ether thioether sulfoxide; and the structural formula is: (FORMULA).
Owner:SICHUAN UNIV
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