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PbS colloidal quantum dot film surface acoustic wave gas sensor

A technology of colloidal quantum dots and gas sensors, which is applied in semiconductor/solid-state device manufacturing, electrical components, and the use of sound waves/ultrasonic waves/infrasonic waves to analyze fluids, etc., to achieve broad application prospects and research value, high sensitivity, and small size.

Inactive Publication Date: 2019-06-21
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are few reports on combining CQDs with SAW devices for gas detection

Method used

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  • PbS colloidal quantum dot film surface acoustic wave gas sensor
  • PbS colloidal quantum dot film surface acoustic wave gas sensor
  • PbS colloidal quantum dot film surface acoustic wave gas sensor

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Embodiment Construction

[0014] The technical scheme of the present invention will be described in further detail below with reference to the accompanying drawings and examples.

[0015] The preparation method of PbS CQDs is synthesized by cation exchange method. First, to synthesize CdS CQDs, 0.28 g CdO, 1.8 g oleic acid (OA), and 8 g 1-octadecene (ODE) were heated at 260 °C for 20 min to form cadmium (Cd) precursors. Then, the solution was cooled to 30 °C while dispersing 360 μL of aqueous solution into 10 mL of oleylamine (OLA) to prepare the sulfur (S) precursor. The S precursor solution was injected into the Cd precursor solution at 30 °C, and then stirred for 1 hour without heating. CdS CQDs were washed twice with hexane and ethanol and dispersed in toluene. Then, at 140° C., 1.5 mol was added to 5 mL of OLA, and heated for 30 minutes until a white turbid solution was formed to obtain a lead (Pb) precursor. Then, 5 mL of CdS CQDs in ODE (20 mL) was rapidly injected into the Pb precursor at 14...

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Abstract

The invention discloses a PbS colloidal quantum dot film surface acoustic wave gas sensor and a manufacturing method thereof, and belongs to the field of novel electronic materials and intelligent sensors. PbS CQDs are synthesized through a cation exchange method; an ST cut quartz crystal SAW delay line is manufactured by adopting a traditional photoetching process; the PbS CQDs are coated on thedelay region of the SAW delay line by using a spin-coating process; the surface acoustic wave gas sensor based on the PbS colloid quantum dot film is manufactured by combining the characteristics of higher specific surface area, easiness in gas adsorption and gas sensitivity of the PbS colloid quantum dot film with the advantages of small size, high sensitivity and the like of the surface acousticwave sensor. The dynamic sensing response of the sensor to gas with the NO2 concentration ranging from 0.5 ppm to 30 ppm at the room temperature is increased from 1 kHz to 12 kHz, the theoretical detection base limit of the sensor is about 32 ppb, good repeatability is achieved, and the sensor has wide application prospects and research values in the aspect of intelligent sensor bionic olfaction.

Description

technical field [0001] The invention relates to a PbS colloidal quantum dot film surface acoustic wave (surface acoustic wave, SAW) gas sensor and a manufacturing method thereof. In the present invention, the high specific surface area of ​​the PbS colloidal quantum dot film, the characteristics of easy adsorption of gas and sensitivity to gas, and the advantages of small volume and high sensitivity of the surface acoustic wave sensor are combined to produce a surface acoustic wave gas sensor based on the PbS colloidal quantum dot film. The sensor can realize high sensitivity and rapid detection at the sub-ppm level, and has broad application prospects and research value in the aspect of smart sensor bionic olfaction. The invention belongs to the field of novel electronic materials and intelligent sensors. Background technique [0002] Surface acoustic wave sensors have attracted widespread attention in the field of sensor applications due to their small size, high sensitiv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N29/02G01N29/036H01L21/208
Inventor 罗景庭李敏范平冯晓莹马少敏洪锐拓区冠文
Owner SHENZHEN UNIV
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