Electron transport material, preparation method thereof and light emitting diode

An electron transport material and light-emitting diode technology, applied in the field of materials, can solve the problems affecting the luminous efficiency and service life of the device, and the uneven hole-electron charge injection, etc., achieve excellent solution processing performance, increase the hole-electron recombination rate, good The effect of solubility

Active Publication Date: 2019-06-25
TCL CORPORATION
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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, provide an electron transport material and its preparation method and a light-emitting diode, aiming at solving the uneven hole-electron charge injection in the existing light-emitting diode device, so as to affect the luminous efficiency of the device and service life technical issues

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  • Electron transport material, preparation method thereof and light emitting diode

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[0025] Correspondingly, an embodiment of the present invention is also a preparation method of an electron transport material, comprising the following steps:

[0026] S01: Provide metal oxide nanoparticles and an alkoxysilane coupling agent containing amino groups at the end of the non-alkoxy carbon chain, dissolve the metal oxide nanoparticles and the silane coupling agent in an organic solvent, and heat Process to obtain the first solution;

[0027] S02: providing MMA monomers and catalysts, adding the MMA monomers and the catalysts to the first solution, and performing an acylation reaction to obtain a second solution;

[0028] S03: providing an azo initiator, adding the initiator into the second solution to carry out a polymerization reaction to obtain the electron transport material.

[0029] The preparation method of the electron transport material provided by the embodiment of the present invention can obtain the electron transport material with adjustable electron in...

Embodiment 1

[0057] A preparation method of an electron transport material, utilizing zinc oxide nano particle powder, KH550 silane coupling agent, MMA monomer, AIBN initiator, xylene, etc. to prepare a ZnO electron transport layer, comprising the following steps:

[0058] Disperse zinc oxide nanoparticles with a particle size range of 5-30nm in xylene (10-100mg / mL) and keep stirring, heat to 160°C under the protection of argon atmosphere, and then add 2-4mL of KH550 as silane coupling agent, and keep warm for 3 hours.

[0059] After heating, the solution was cooled to room temperature, centrifuged, washed with acetone and ethanol, dried to obtain silanized zinc oxide nanoparticles, and redispersed in xylene, maintaining high-speed stirring. Inject 2-8mL of MMA and 10-100mg of sodium ethoxide catalyst into the xylene solution, stir evenly, heat to 90°C and keep it warm for 1 hour, then inject 10-100mg of AIBN, keep it warm for 1 hour and then cool down to room temperature. Subsequently, t...

Embodiment 2

[0061] A preparation method for electron transport materials, using titanium dioxide nanoparticle powder, KH550 silane coupling agent, MMA monomer, AIBME initiator, toluene, etc. to prepare TiO 2 Electron transport layer, comprising the following steps:

[0062] Take titanium dioxide nanoparticles with a particle size range of 5-30nm and disperse them in toluene (10-100mg / mL) and keep stirring, heat to 150°C under the protection of argon atmosphere, then add 2-4mL of KH550 as a silane coupling agent, And keep warm for 3 hours.

[0063]After heating, the solution was cooled to room temperature, centrifuged, washed with acetone and ethanol, dried to obtain silanized titanium dioxide nanoparticles, and redispersed in toluene, maintaining high-speed stirring. Inject 4-8mL of MMA and 10-100mg of PCC condensing agent into the toluene solution, stir evenly, heat to 90°C and keep it warm for 1 hour, then inject 10-100mg of AIBME into the toluene solution, keep it warm for 1 hour and ...

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Abstract

The invention belongs to the technical field of materials, and specifically relates to an electron transport material, a preparation method thereof and a light emitting diode. The electron transport material comprises metal oxide nanoparticles and PMMA, wherein the metal oxide nanoparticles and the PMMA are connected through an alkoxy silane coupling agent containing an amino at the tail end of anon-alkoxy carbon chain; one end of the silane coupling agent is connected with the metal oxide nanoparticles through -Si(O-)3, and the other end of the silane coupling agent is connected with PMMA through -NH-CO-. The electron transport material is used for preparing an electron transport layer, can improve a phenomenon of uneven electron-hole injection of a light emitting diode device, and thuscan achieve an effect of balanced charge injection through adjusting the injection ratio of electrons and holes in a light emitting layer, so that an electron transport layer with the electron injection capacity being adjustable, thus the recombination rate of the holes and electrons in the light emitting layer can be increased, and the light emitting efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to an electron transport material, a preparation method thereof and a light emitting diode. Background technique [0002] In recent years, quantum dot light-emitting diode (QLED) technology has developed rapidly, and its luminous efficiency and lifetime are approaching the level of OLED. Among them, optimizing the device structure is a general direction to improve the performance of QLEDs. How to improve the mobility of carriers by optimizing the structure of hole and electron transport layers is very important. [0003] Researchers use the addition of electronic resists (such as PMMA, PVP, SiO 2 etc.) acts as an electron blocking layer, confining the combination of holes and electrons in the quantum dot layer to achieve the effect of balancing carriers. However, the film thickness of the electron blocking layer directly affects the carrier transport performance. It ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
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