Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing SiGe thermoelectric material

A technology of thermoelectric materials and raw materials, applied in the direction of thermoelectric device lead-out wire materials, thermoelectric device manufacturing/processing, etc., can solve the problems of poor mechanical properties, low production efficiency and high production cost of single crystal SiGe, and achieve excellent thermoelectric performance , short holding time and high power factor

Inactive Publication Date: 2018-07-06
INST OF NUCLEAR PHYSICS & CHEM CHINA ACADEMY OF
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The growth of single crystal has strict requirements on process and so on, and the cycle is longer, and the mechanical properties of single crystal SiGe are worse than those of polycrystalline SiGe.
However, the current ball-milled alloyed SiGe thermoelectric materials have low production efficiency and high production costs, and it is urgent to develop a method for preparing SiGe thermoelectric materials with high efficiency and low cost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing SiGe thermoelectric material
  • Method for preparing SiGe thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] 1. Ingredients, P-type Si 0.795 Ge 0.2 B 0.005 Material ingredients: Weigh 6.049g of Si powder, 3.936g of Ge powder, and 0.0146g of B powder, put them into a mortar and grind and mix them to obtain raw material I; N-type Si 0.7925 Ge 0.2 P 0.0075 Material ingredients: Weigh 6.0127g of Si powder, 3.9245g of Ge powder, and 0.06275g of P block, and put them into a mortar for grinding and mixing to obtain raw material II.

[0021] 2. Filling into cans, transfer raw material I and raw material II to two hard steel ball milling tanks respectively, and add 400g of hard steel ball milling balls to each tank. The ball mill jar was sealed in an Ar gas atmosphere protection glove box and then taken out.

[0022] 3. Ball milling, put the ball milling tank in the planetary ball mill, the speed is 400rpm, first rotate the ball mill forward for 10 minutes, then stop for 10 minutes, and finally reverse the ball milling process for 10 minutes, and obtain single-phase P-type SiGe th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
densityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a SiGe thermoelectric material. According to the method, Si powder, Ge powder, B powder or P blocks are mixed according to a determined molar ratio; obtained mixtures are loaded into hard steel ball mill tanks under the protection of an Ar inert atmosphere; ball-milling and alloying are performed on the mixtures through using a planetary ball mill, sothat single-phase SiGe thermoelectric material powder is obtained; the single-phase SiGe thermoelectric material powder is subjected to discharge plasma sintering at 1150 DEG C, so that dense blockscan be obtained. The P type and N type SiGe alloy prepared by the method for preparing the SiGe thermoelectric material of the present invention have high electrical conductivity, high Seebeck coefficients and high power factors. The method for preparing the SiGe thermoelectric material of the invention has the advantages of high synthesis speed, simplicity, convenience, high efficiency and wide application prospect.

Description

technical field [0001] The invention belongs to the field of thermoelectric power generation, and in particular relates to a method for preparing SiGe thermoelectric materials. Background technique [0002] Thermoelectric materials are energy conversion materials that directly convert thermal energy into electrical energy using the Seebeck effect. It has the advantages of long service life, no vibration and noise when working, strong environmental adaptability, and no need for maintenance. At present, in the process of energy utilization, a large amount of energy is wasted in the form of waste heat. If thermoelectric materials are used to recover waste heat from industry and automobile exhaust to generate electricity, the energy utilization rate will be improved and the energy crisis will be alleviated. In addition, in the field of deep space exploration and in harsh environments such as deep sea, underground, and north and south poles, the use of solar cells and chemical b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/22H10N10/01H10N10/855
CPCH10N10/855H10N10/01
Inventor 李静韩军姜涛向永春
Owner INST OF NUCLEAR PHYSICS & CHEM CHINA ACADEMY OF
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com