86results about How to "High thermoelectric figure of merit" patented technology

A process for preparing the BiTe-based electrothermal material includes such steps as proportionally mixing raw materials, vacuum smelting for alloying, quick cold quenching for non-crystalline treating, breaking, ball grinding, vacuum drying, hot pressing or hot shear extruding and machining. Its advantages are high density, thermoelectric performance, and machinability and low cost.

The invention discloses a planar flexible thermoelectric power generation structure which includes a thermal conduction layer, an insulating layer, a power generation layer and a hot-end protective layer, which are sequentially arrayed and laid from bottom to top. All of the thermal conduction layer, the insulating layer, the power generation layer and the hot-end protective layer adopt flexible materials. A first flexible material and a second flexible material are closely arrayed alternatively so that the thermal conduction layer is formed. The hot-end protective layer is a flexible insulating strip. Both of the heat conduction factors of the first flexible material and the flexible insulating strip are lower than the heat conduction factor of the second flexible material. The structure increases protection of a hot end and heat radiation of a cold end, improves the temperature gradient of a thermoelectric power generator and further improves an output power and an output voltage. The thermal conduction layer provides a temperature gradient needed by the thermoelectric power generator and has a support function; the flexible materials are adopted so that compared with a rigid thermoelectric power generation device, the power generation structure is flexible, light and convenient and capable of better fitting to the plane; and the power generation structure is simple in structure and manufacturing process and capable of realizing mass production, and has an excellent application prospect.

The invention relates to a hole compensation type skutterrudite thermoelectric material and a preparation method of the hole compensation type skutterudite thermoelectric material. The hole compensation type skutterudite thermoelectric material is shown in the following description: RyA(4-x)BxSb12/z NC, wherein x is equal to or greater than 0.01 and equal to or less than 0.5, y is equal to or greater than 0.01 and equal to or less than 1 and z is equal to or greater than 0% and equal to or less than 10%; R is selected from at least one of the following group of elements: Ca, Ba, La, Ce, Pr, Nd and Yb; A is selected from at least one of the following group of elements: Fe, Co and Ni; B is selected from at least one of the following group of transition metal elements: Ti, V, Cr, Mn, Fe, Nb, Mo, Tc and Ru, and electron number of the element B is less than that of the element A; and NC is in phase II, wherein z is mole% in the phase II of the thermoelectric material. The invention also provides the preparation method of the hole compensation type skutterrudite thermoelectric material.

The invention relates to a self-repairing MXene/polyurethane thermoelectric composite material and a preparation method thereof. A pretreated loofah sponge fiber skeleton and MXene are hybridized to form a three-dimensional mutual lap joint network structure, the network structure and self-repairing microcapsules are implanted in the polymerization process of polyurethane, and the prepared composite material has a high seebeck coefficient, a high thermoelectric figure of merit and good mechanical properties. The self-repairing microcapsules are used as a functional material, so that automaticresponse to damage and self-repairing of a conductive network can be realized. The composite material can be applied to a conductive composite material, an elastic conductor or a thermoelectric material.

The invention belongs to the field of materials, and relates to a method for preparing a misfit chalcogenide thermoelectric material by a solid-phase reaction method. The method comprises the steps of weighing Sn powder and Cu powder or Co powder, Ti powder and S powder based on a mass ratio of 1 to 0.04 to 1.96 to 5, then grinding and mixing the powder; pressing the powder at the pressure of 3-5MPa into tablets, and putting the tablets into a quartz tube; vacuumizing and sealing the tube and then sintering; and performing steps of grinding, vacuumizing and sintering for two rounds to obtain the misfit chalcogenide. The method for preparing the misfit chalcogenide by the solid-phase reaction method provided by the invention can be used for preparation of the misfit-system chalcogenide thermoelectric material; the process is simple to operate and high in repeatability; the phase-forming degree, the density and the misfit structure of the misfit compound can be controlled by adjusting the technological parameters of temperature rise speed, phase-forming temperature, heat preservation time, sintering times and the like; the method is high in controllability; and the prepared misfit layered compound has the characteristics of high phase-forming degree, low impurities, high density, low thermal conductivity, high thermoelectric figure of merit and the like.

The invention discloses a preparation method of a SnSe-based oriented polycrystalline thermoelectric material. The method combines a smelting method with a multi hot-pressing method, and comprises thesteps of firstly, smelting a prepared raw material and casting the prepared raw material into an ingot; then ball-milling the casted ingot to obtain powders; hot-pressing the powders to obtain a block; and finally hot pressing the block multiple times. The method is simple, easy to implement, and low in cost. Multiple hot pressing can enhance the texture, improve the orientation and improve the electrical properties during the plastic deformation and re-crystallization process, thereby improving the thermoelectric figure of merit of the SnSe-based thermoelectric material.

A thermoelectric material of the general formula Ag 1-X M m M'Q 2+m , wherein M is selected from the group consisting of Pb, Sn, Ca, Sr, Ba, divalent transition metals, and combinations thereof; M' is selected from the group consisting of Bi, Sb, and combinations thereof; Q is selected from the group consisting of Se, Te, S, and combinations thereof; 8 <= m <= 24; and 0.01 <= x <= 0.7. In embodiments of the invention, the compositions exhibit n-type semiconductor properties. In preferred embodiments, x is from 0.1 to 0.3, and m is from 10 to 18. The compositions may be synthesized by adding stoichiometric amounts of starting materials comprising Ag, M, M', and Q to a reaction vessel, heating the starting materials to a temperature and for a period of time sufficient to melt the materials, and cooling the reaction product at a controlled rate of cooling.

The invention belongs to the technical field of thermoelectric materials, and discloses a copper sulfide based thermoelectric composite material and a preparation method thereof. The chemical formulaof the copper sulfide based thermoelectric composite material is Cu<1.8-m>M<m>S, and m is 0.05-0.3. The composite material comprises a matrix phase Cu<1.8>S and a second phase Cu<x>M<y>S<z>. The second phase Cu<x>M<y>S<z> is dispersed in the matrix phase Cu<1.8>S in a form of nano precipitates. The preparation method comprises following steps: ball-milling CuM alloy powder and S simple substance powder to obtain Cu<1.8-m>M<m>S powder; and sintering the Cu<1.8-m>M<m>S powder to obtain the copper sulfide based thermoelectric composite material. The problem that the thermoelectric performance of a conventional copper sulfide thermoelectric material is not good is solved.