Multi-level doped PbTe-based thermoelectric material and preparation method thereof

A thermoelectric material, multi-level technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., can solve the problems of reduced mobility, reduced bipolar effect, no experimental results, etc. Thermoelectric efficiency, effect of high thermoelectric figure of merit

Active Publication Date: 2017-07-14
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] (1) Theoretically speaking, increasing the majority carrier concentration of a material must correspond to a decrease in the minority carrier concentration, thereby reducing the bipolar effect. However, from the perspective of optimizing ZT, each material has an optimal carrier concentration. Blindly increasing the carrier concentration will reduce the thermoelectric figure of merit of the material;
[0009] (2) The alloying process will inevitably bring about a sharp drop in mobility caused by lattice defects;
[0010] (3) The selection of the heterojunction barrier is an extremely difficult matter, and it is only a theoretical prediction at present, and there is no experimental result;
[0011] (4) Deep-level doping can effectively increase the bipolar diffusion temperature, but deep-level doping itself is difficult to ionize, and only a small part of impurities contribute to the carrier concentration, although more can be obtained at high temperatures. Carriers, but the carrier concentration is very low at low temperature

Method used

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  • Multi-level doped PbTe-based thermoelectric material and preparation method thereof
  • Multi-level doped PbTe-based thermoelectric material and preparation method thereof
  • Multi-level doped PbTe-based thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A multi-level doped PbTe-based thermoelectric material with a molecular formula of In x Pb 1-x Te 0.996 I 0.004 , where 00.00125 Pb 0.99875 Te 0.996 I 0.004 ,In 0.0025 Pb 0.9975 Te 0.996 I 0.004 ,In 0.0035 Pb 0.9965 Te 0.996 I 0.004 and In 0.005 Pb 0.995 Te 0.996 I 0.004 .

[0041] Step S1: Vacuum-seal In, Pb, Te, and I in a quartz tube according to the ratio, raise the temperature to 1000° C. at a heating rate of 200° C. / h, and hold the temperature for 6 hours.

[0042] Step S2: Then lower the temperature to 600° C. at a rate of 200° C. / h, anneal at this temperature for 50 hours, and finally lower the temperature to room temperature at a rate of 200° C. / h.

[0043] Step S3: Clean and pulverize the obtained ingot in a glove box, and heat press the powder at 600° C. and 80 MPa for 2 minutes with a DC hot press.

[0044] Then the materials prepared above were tested and analyzed. figure 1 Doping In for multiple energy levels x Pb 1-x Te 0.996 I 0.0...

Embodiment 2

[0050] Multi-level doping of PbTe-based thermoelectric material In with different A elements x Pb 1-x Te 1-y A y , wherein, A is Cl, Br, I, Ga, Al; 0

[0051] Table 1 shows the data of thermoelectric figure of merit Z and thermoelectric efficiency (low temperature end 50°C) at 500°C for the examples using deep-level impurity In and different shallow-level impurities A and the corresponding comparative examples.

[0052] Table 1

[0053]

[0054] It can be seen from the data in Table 1 that the thermoelectric materials obtained by co-doping with deep-level impurity In and different shallow-level impurities A have high thermoelectric figure of merit compared with the comparative examples, which improves the thermoelectric efficiency of the material.

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Abstract

The invention provides a multi-level doped PbTe-based thermoelectric material and a preparation method thereof. A molecular formula of the multi-level doped PbTe-based thermoelectric material is InxPb1-xTe1-yAy, wherein A is Cl, Br, I, Ga or Al; x is greater than 0 and less than or equal to 0.02; and y is greater than 0 and less than or equal to 0.03. According to the technical scheme, simultaneous doping of deep and shallow levels is adopted; carrier concentration at a low temperature is increased by utilizing shallow level doping; carrier concentration at a high temperature is increased by utilizing deep level doping; an ambipolar diffusion temperature is increased; and the thermoelectric material with a high thermoelectric merit figure within a wide temperature range is finally obtained. The thermoelectric efficiency of the material is improved.

Description

technical field [0001] The invention belongs to the technical field of thermoelectric materials, and in particular relates to a multi-energy level doped PbTe-based thermoelectric material and a preparation method thereof. Background technique [0002] The material of a thermoelectric generator or thermoelectric cooler is called a thermoelectric material, which is a material that can realize the interactive transformation of electrical energy and thermal energy. Thermoelectric power generation and refrigeration devices made of thermoelectric materials have the advantages of no pollution, no noise, easy maintenance, safety and reliability. The earliest Soviets used kerosene lamps or wood as a heat source to power domestic radio receivers in remote areas. With increasing interest in space exploration, and increasing resource exploration and exploration activities on Earth, there is a need to develop a class of power systems that can supply their own energy and leave it alone. ...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/20H01L35/34
CPCH10N10/854H10N10/852H10N10/01
Inventor 张倩王心宇张宗委李孝芳
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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