Multi-level doped PbTe-based thermoelectric material and preparation method thereof
A thermoelectric material, multi-level technology, applied in the direction of thermoelectric device junction lead-out material, thermoelectric device manufacturing/processing, etc., can solve the problems of reduced mobility, reduced bipolar effect, no experimental results, etc. Thermoelectric efficiency, effect of high thermoelectric figure of merit
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Embodiment 1
[0040] A multi-level doped PbTe-based thermoelectric material with a molecular formula of In x Pb 1-x Te 0.996 I 0.004 , where 00.00125 Pb 0.99875 Te 0.996 I 0.004 ,In 0.0025 Pb 0.9975 Te 0.996 I 0.004 ,In 0.0035 Pb 0.9965 Te 0.996 I 0.004 and In 0.005 Pb 0.995 Te 0.996 I 0.004 .
[0041] Step S1: Vacuum-seal In, Pb, Te, and I in a quartz tube according to the ratio, raise the temperature to 1000° C. at a heating rate of 200° C. / h, and hold the temperature for 6 hours.
[0042] Step S2: Then lower the temperature to 600° C. at a rate of 200° C. / h, anneal at this temperature for 50 hours, and finally lower the temperature to room temperature at a rate of 200° C. / h.
[0043] Step S3: Clean and pulverize the obtained ingot in a glove box, and heat press the powder at 600° C. and 80 MPa for 2 minutes with a DC hot press.
[0044] Then the materials prepared above were tested and analyzed. figure 1 Doping In for multiple energy levels x Pb 1-x Te 0.996 I 0.0...
Embodiment 2
[0050] Multi-level doping of PbTe-based thermoelectric material In with different A elements x Pb 1-x Te 1-y A y , wherein, A is Cl, Br, I, Ga, Al; 0
[0051] Table 1 shows the data of thermoelectric figure of merit Z and thermoelectric efficiency (low temperature end 50°C) at 500°C for the examples using deep-level impurity In and different shallow-level impurities A and the corresponding comparative examples.
[0052] Table 1
[0053]
[0054] It can be seen from the data in Table 1 that the thermoelectric materials obtained by co-doping with deep-level impurity In and different shallow-level impurities A have high thermoelectric figure of merit compared with the comparative examples, which improves the thermoelectric efficiency of the material.
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