5results about How to "High power factor" patented technology

The application discloses a SnTe-based thermoelectric material and a preparation method thereof, and belongs to the technical field of thermoelectricity. The application adopts high-purity metal elements as raw materials, and the raw materials are mixed according to a stoichiometric ratio, and then a cast ingot is obtained through a melting reaction after vacuum packaging. Subsequently, the cast ingot is subjected to high-temperature annealing treatment. After the cast ingot subjected to the high-temperature annealing treatment is ground into powder, a dense block-shaped SnTe-based thermoelectric material is formed through discharge plasma sintering. The chemical formula of the SnTe-based thermoelectric material is Sn 2.9‑X W X Te 2.9 -(In2Te3) 0.03 -(Cu2Te) 0.18 The application significantly improves the thermoelectric figure of merit of the SnTe-based thermoelectric material and improves the thermoelectric performance of the SnTe-based thermoelectric material by doping tungsten elements in the SnTe matrix and compounding the two metal compounds of In2Te3 and Cu2Te.

This invention discloses a method for rapidly preparing high-performance GeTe thermoelectric materials, wherein the thermoelectric material has the general chemical formula Ge. x M 1‑ x Te y N 1‑y Where M is one or more of the elements Cd, Mn, Cr, Fe, Cu, Sb, Ag, In, Pb, and Zn, and N is one or more of the elements Se, I, S, Si, Br, and C, where x and y are the molar numbers, 0.6 <x≤1,0.5<y≤1。Ge x M 1‑x Te y N 1‑y The preparation methods mainly include low-energy ball milling mixing, cold pressing, high-energy ball milling, and spark plasma sintering. The Ge described in this invention... x M 1‑x Te y N 1‑y Thermoelectric materials have the advantages of simple, rapid, and safe preparation methods, and can effectively reduce thermal conductivity, improve power factor, and enhance compressive strength, thus expanding the application fields of thermoelectric materials.

This invention discloses a Yb / Cd co-doped p-type Mg 3 Sb 2 Thermoelectric materials and their preparation methods belong to the field of energy conversion technology. A high-temperature vacuum solid-state reaction combined with rapid hot-pressing sintering process is employed, carried out in an argon atmosphere glove box according to the Mg... 3‑3x Cd 2x Yb x Sb 2 Mg, Cd, Yb, and Sb powders were weighed according to a stoichiometric ratio of 0 < x ≤ 0.4 and ground and mixed evenly. The mixed powder was cold-pressed into blocks, then placed in an alumina crucible and vacuum-sealed in a quartz tube. The mixture was then subjected to high-temperature solid-state sintering in a pit furnace, followed by cooling and grinding to obtain Mg. 3‑3x Cd 2x Yb x Sb 2 Powder thermoelectric materials. Finally, the powder material is vacuum hot-pressed and sintered under suitable pressure and temperature to obtain Mg. 3‑3x Cd 2x Yb x Sb 2 Bulk thermoelectric materials. The thermoelectric materials prepared by this invention have extremely low thermal conductivity while also possessing a high power factor, thus achieving excellent thermoelectric figure of merit and demonstrating great application potential in the field of energy conversion.

The application discloses a kind of multi-period Bi2Te3 / ZnSb thermoelectric thin film materials and preparation method thereof, characterized in that the thin film material is deposited alternately by Bi2Te3 thin film layer and ZnSb thin film layer Composite, the thickness ratio of Bi2Te3 single layer and ZnSb single layer is (3-7):(7-3) and the thickness sum is 10nm, its preparation method steps are as follows: in the magnetron sputtering coating system, the sputtering power of fixed Bi2Te3 target and ZnSb target is 50W, the sputtering time of Bi2Te3 target is controlled to be 7-16s, the sputtering time of ZnSb target is 14-33s, double-target is sputtered alternately at room temperature, after 10 cycles, the deposited state multi-period Bi2Te3 / ZnSb thermoelectric thin film material is obtained, the advantages are that the composition is controllable and uniform, the performance is high, the intrinsic contradiction of decoupling conductivity and Seebeck coefficient can be solved, which is conducive to promoting higher thermoelectric performance.

The application discloses a method for preparing N-type bismuth telluride based on plastic deformation of melting combination, and belongs to the technical field of thermoelectric material preparation. The method comprises the following steps: weighing raw materials of N-type bismuth telluride powder, vacuum packaging, heating and melting, and cooling to obtain a ingot with uniform composition; grinding the obtained ingot into fine powder by using an agate mortar; then performing first spark plasma sintering on the powder to obtain a densified block; finally, performing second spark plasma sintering on the block, and applying pressure to induce plastic deformation in the sintering process; and through the adjustment of deformation temperature, pressure and strain rate, the grain preferred orientation and micro defect are cooperatively optimized. The application adopts a step-by-step spark plasma sintering plastic deformation process, significantly improves the thermoelectric performance of bismuth telluride material, especially the power factor and ZT value, and has the advantages of simple process, short cycle, good repeatability, suitable for industrial production and the like.