116results about How to "High power factor" patented technology

Using resetable integrator carries out integral conformity calculation for voltage signal of output difference of voltage error amplifier, and input current signal obtained from sensor respectively. Then, using comparison operation controls work cycle of switch to make input current and input voltage in AC / DC power converter in proportion and in same phase. Comparing with traditional PFC circuit, the disclosed control mode uses fewer parts and is simpler. The disclosed device is easier to be integrated to packaging body with fewer pins as well as can obtain high power factor and low total harmonic distortion.

The invention provides a control circuit which is used in a power factor corrector. The power factor corrector transforms an AC input voltage after being rectified to a rectifying voltage; the control circuit outputs a switching signal so as to control a power switch; the control circuit comprises a voltage division filtration circuit which produces an input current signal and an effective value voltage signal after voltage division and filtration for the rectifying voltage according to an effective voltage signal, the wave shape of the input current signal is the same as the wave shape of the rectifying voltage, and a DC level is improved. The control circuit also comprises a gain modulation circuit which produces a control signal according to the input circuit signal, the effective value voltage signal and an error signal, the error signal is produced by one output terminal of the power factor corrector, and the control circuit further comprises a switching circuit which is coupled with the gain modulation circuit and outputs the switching signals according to the control signal and a sawtooth wave signal, wherein, the input current signal with DC level can improve the power factor and lower the total harmonic distortion.

The present invention provides a thermoelectric material which, when a thermoelectric conversion module is formed therefrom, reduces contact resistance with an electrode and will not be detached ; thethermoelectric conversion module using the thermoelectric material; a method for manufacturing same; and a Peltier element. A thermoelectric material according to the present invention contains a thermoelectric substance and a solvent, and the solvent has a vapor pressure of 0-1.5 Pa at 25 DEG C, has a storage elastic modulus G' in the range of 1*101 to 4*106 Pa, and has a loss elastic modulus G'in the range of 5 to 4*106 Pa.

The invention relates to a p-type skutterudite material and a preparation method thereof. The invention provides the p-type skutterudite material which has a chemical formula as represented by IyFe4-xMxSb12 / z(phi), wherein, I is one kind or more kinds of filling atoms in a skutterudite phase, the filling amount y of the filling atoms is no less than 0.01 and no more than 1, M is one kind or more kinds of dopant atoms, the dopant amount x of the dopant atoms is no less than 0 and less than 4, phi is one kind or more kinds of second phases, the molar ratio z of phi is no less than 0 and no morethan 0.5, and second phase sediment disperses in the skutterudite phase. The invention also provides the preparation method for the p-type skutterudite material.

The invention discloses a switch power supply of a power factor correction controller, comprising a boosting converter, a current detection unit, an operational unit and a switch control unit; the current detection unit is used for detecting or driving current to pass through an energy transferring device, and the energy transferring device is composed of a diode or a switch commonly; the current detection unit is used for detecting inductive current or switch current. Under the condition of no-load direct detection, the optical switch breakover time is operated by an arithmetic element according to the current detection unit, or the switch can be powered off at any time; in the switch power supply of the invention, the circuit needed to detect load-end voltage in the prior art is removed, the whole weight is reduced and the system cost is reduced; in addition, the power factor of the system can be improved by detecting the current transferring way of the energy transferring, thereby being different from the prior art.

The invention relates to a Pb / Ba double doped BiCuSeO thermoelectric material and a preparation method thereof. The method is characterized in that the material is prepared from bismuth oxide powder,copper powder, selenium powder, bismuth powder, lead powder and barium oxide powder in mass ratio of (1-x):3:3:(1-4x):3x:3x; the powders are mixed uniformly, ball milling is conducted on the powders in a mill pot under an inert atmosphere for 5-12 hours; the milled PbxBaxBi1-2xCuSeO powder is put into a mould, the mould is placed in a plasma activated sintering furnace, meanwhile the temperature is increased to 500-700 DEC G in a uniform speed and the pressure is increased to 30-100 MPa in a uniform speed, the temperature maintaining and pressure maintaining are conducted, then the temperatureis reduced to the normal temperature in a uniform speed, and the pressure is reduced to the normal pressure in a uniform speed; the sintered mould is taken out, and demoulding is conducted to obtainthe Pb / Ba double doped BiCuSeO thermoelectric material, wherein 0.01<=x<=0.08. The method has the advantages of simple process, short production cycle and high production efficiency, and the preparedproducts have the advantages of high purity, low thermal conductivity, high electrical conductivity, good electrical transmission performance, high power factor and high non-dimensional thermoelectricfigure of merit ZT.

The invention relates to a series of metal-doped tungsten disulfide thermoelectric materials and a preparation method. The metal-doped tungsten disulfide thermoelectric materials have a chemical general formula of MxWS2, wherein M is one or more than two selected from Ti, V, Nb, Zr, Ta, Hf, Yb and Re, x is a mole fraction of the M metal to WS2 and 0<x< / =1. The material preparation method comprises steps: solid powder mixing and material spark plasma sintering are carried out, metal and tungsten sulfide are firstly weighed at a certain molar ratio, mechanical grinding and mixing are carried out, the mixed powder is subjected to spark plasma sintering under proper pressure and temperature, and an MxWS2 thermoelectric material is obtained after sintering. The thermoelectric material of the invention has high conductance and Seebeck coefficients, the thermoelectric performance is good, and besides, the MxWS2 material can be applied to fields such as electrochemistry, photoelectrocatalysis and electronic devices.

The invention relates to a single-crystal tin selenide pyroelectric thin film and a preparing method thereof, and belongs to the field of pyroelectric materials. The preparing method of the single-crystal tin selenide pyroelectric thin film includes the following steps of taking a substrate, putting the substrate in cleaning liquid for ultrasonic cleaning for 20 minutes, drying the substrate for 2hours at 60-150 DEG C after cleaning, taking out the substrate to be naturally cooled, putting the processed substrate onto a spinner, dropwise adding dispersion liquid onto the surface of the substrate, conducting spinning for 10-60 seconds, taking out the substrate after spinning, drying the substrate for 5-10 minutes at 200 DEG C to obtain a buffering layer substrate, putting a tin selenide sputtering target material and the prepared buffering layer substrate into a high-vacuum multifunctional magnetron sputtering film coating instrument for vacuumizing, heating the buffering layer substrate, and introducing inert gas for sputtering for 20-60 minutes to obtain the single-crystal tin selenide pyroelectric thin film. The preparing method has the advantages that the preparing process is simple, and the prepared single-crystal tin selenide pyroelectric thin film is high in single crystallinity and power factor.

The invention discloses a full-temperature-range high-performance n-type Mg-Sb-based thermoelectric material and a preparation method thereof, and relates to an n-type thermoelectric material and a preparation method thereof. The full-temperature-range high-performance n-type Mg-Sb-based thermoelectric material aims to solve the problems that an existing n-type Mg3Sb2-based thermoelectric materialcannot simultaneously obtain high performance at room temperature and high temperature and is poor in mechanical property. The chemical general formula of thefull-temperature-range high-performance n-type Mg-Sb-based thermoelectric material is B<x>Mg<3.2-x>Sb<1.99y>Bi<y>Te<0.01>. The preparation method comprises the following steps of: 1, weighing; 2, ball milling; and 3, sintering. The preparation method is used for preparing the full-temperature-range high-performance n-type Mg-Sb-based thermoelectric material.