Pb/Ba double doped BiCuSeO thermoelectric material and preparation method thereof

A thermoelectric material, double-doped technology, applied in the direction of thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, etc., can solve the problems of low dimensionless thermoelectric figure of merit, poor electrical transport performance, low conductivity, etc. , to achieve the effect of improving the dimensionless thermoelectric figure of merit, high production efficiency, and reducing thermal conductivity

Active Publication Date: 2018-05-04
WUHAN UNIV OF SCI & TECH
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, like other oxide thermoelectric materials, there are also defects such as low electrical conductivity, poor electrical transport performance, low power factor, and low dimensionless thermoelectric figure of merit.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pb/Ba double doped BiCuSeO thermoelectric material and preparation method thereof
  • Pb/Ba double doped BiCuSeO thermoelectric material and preparation method thereof
  • Pb/Ba double doped BiCuSeO thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A Pb / Ba double-doped BiCuSeO thermoelectric material and a preparation method thereof. The chemical formula of the Pb / Ba double-doped BiCuSeO thermoelectric material described in this embodiment is Pb x Ba x Bi 1-2x CuSeO; The concrete steps of described preparation method are:

[0041] The first step, according to bismuth oxide powder: copper powder: selenium powder: bismuth powder: lead powder: the ratio of the amount of substance of barium oxide powder is (1-x): 3: 3: (1-4x): 3x: 3x The ingredients are mixed evenly to obtain a mixed powder.

[0042] In the second step, the mixed powder is loaded into a high-energy planetary ball mill, and ball milled for 5 to 7 hours under an inert atmosphere. The mass ratio of the ball to material during ball milling is (10 to 15): 1, and the rotating speed is 200 to 350 r / min. Produced Pb x Ba x Bi 1-2x CuSeO powder.

[0043] The third step, the Pb x Ba x Bi 1-2xPut the CuSeO powder into the mold, place it in the plasma ...

Embodiment 2

[0049] A Pb / Ba double-doped BiCuSeO thermoelectric material and a preparation method thereof. The chemical formula of the Pb / Ba double-doped BiCuSeO thermoelectric material described in this embodiment is Pb x Ba x Bi 1-2x CuSeO; The concrete steps of described preparation method are:

[0050] The first step, according to bismuth oxide powder: copper powder: selenium powder: bismuth powder: lead powder: the ratio of the amount of substance of barium oxide powder is (1-x): 3: 3: (1-4x): 3x: 3x The ingredients are mixed evenly to obtain a mixed powder.

[0051] In the second step, the mixed powder is loaded into a high-energy planetary ball mill, and ball milled for 6 to 8 hours under an inert atmosphere. The mass ratio of the ball to material during ball milling is (12 to 17): 1, and the rotating speed is 250 to 400 r / min. Produced Pb x Ba x Bi 1-2x CuSeO powder.

[0052] The third step, the Pb x Ba x Bi 1-2x Put the CuSeO powder into the mold, put it in the plasma a...

Embodiment 3

[0058] A Pb / Ba double-doped BiCuSeO thermoelectric material and a preparation method thereof. The chemical formula of the Pb / Ba double-doped BiCuSeO thermoelectric material described in this embodiment is Pb x Ba x Bi 1-2x CuSeO, the concrete steps of described preparation method are:

[0059] The first step, according to bismuth oxide powder: copper powder: selenium powder: bismuth powder: lead powder: the ratio of the amount of substance of barium oxide powder is (1-x): 3: 3: (1-4x): 3x: 3x The ingredients are mixed evenly to obtain mixed powder;

[0060] In the second step, the mixed powder is loaded into a high-energy planetary ball mill, and ball milled for 7 to 9 hours under an inert atmosphere. The mass ratio of ball to material during ball milling is (14 to 19): 1, and the rotating speed is 300 to 450r / min. Produced Pb x Ba x Bi 1-2x CuSeO powder.

[0061] The third step, the Pb x Ba x Bi 1-2x Put the CuSeO powder into the mold, place it in the plasma activa...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention relates to a Pb / Ba double doped BiCuSeO thermoelectric material and a preparation method thereof. The method is characterized in that the material is prepared from bismuth oxide powder,copper powder, selenium powder, bismuth powder, lead powder and barium oxide powder in mass ratio of (1-x):3:3:(1-4x):3x:3x; the powders are mixed uniformly, ball milling is conducted on the powders in a mill pot under an inert atmosphere for 5-12 hours; the milled PbxBaxBi1-2xCuSeO powder is put into a mould, the mould is placed in a plasma activated sintering furnace, meanwhile the temperature is increased to 500-700 DEC G in a uniform speed and the pressure is increased to 30-100 MPa in a uniform speed, the temperature maintaining and pressure maintaining are conducted, then the temperatureis reduced to the normal temperature in a uniform speed, and the pressure is reduced to the normal pressure in a uniform speed; the sintered mould is taken out, and demoulding is conducted to obtainthe Pb / Ba double doped BiCuSeO thermoelectric material, wherein 0.01<=x<=0.08. The method has the advantages of simple process, short production cycle and high production efficiency, and the preparedproducts have the advantages of high purity, low thermal conductivity, high electrical conductivity, good electrical transmission performance, high power factor and high non-dimensional thermoelectricfigure of merit ZT.

Description

technical field [0001] The invention belongs to the technical field of BiCuSeO thermoelectric materials. In particular, it relates to a Pb / Ba double-doped BiCuSeO thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials can realize the direct conversion of thermal energy and electrical energy, and have good application prospects in the use of high-temperature industrial low-grade waste heat and distributed low-temperature waste heat for thermoelectric power generation, and have become a research hotspot in the field of materials. The key parameter "dimensionless thermoelectric figure of merit" that determines the thermoelectric conversion efficiency of materials ZT=(S 2 σ / κ)T; where: S is the Seebeck coefficient, σ is the electrical conductivity and κ is the thermal conductivity, and T is the temperature. A good thermoelectric material should meet the requirements of high electromotive force, high electrical conductiv...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/16
CPCH10N10/852H10N10/01
Inventor 樊希安冯波江程鹏李光强贺铸李亚伟
Owner WUHAN UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap