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A kind of Pb/ba double-doped bicuseo thermoelectric material and preparation method thereof

A thermoelectric material and dual-doping technology, which is applied in the direction of thermoelectric device node lead-out material, thermoelectric device manufacturing/processing, etc., can solve the problems of low dimensionless thermoelectric figure of merit, poor electrical transport performance, low power factor, etc. , to achieve the effect of improving the dimensionless thermoelectric figure of merit, high production efficiency and short production cycle

Active Publication Date: 2021-05-18
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, like other oxide thermoelectric materials, there are also defects such as low electrical conductivity, poor electrical transport performance, low power factor, and low dimensionless thermoelectric figure of merit.

Method used

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  • A kind of Pb/ba double-doped bicuseo thermoelectric material and preparation method thereof
  • A kind of Pb/ba double-doped bicuseo thermoelectric material and preparation method thereof
  • A kind of Pb/ba double-doped bicuseo thermoelectric material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] A Pb / Ba double-doped BiCuSeO thermoelectric material and a preparation method thereof. The chemical formula of the Pb / Ba double-doped BiCuSeO thermoelectric material described in this embodiment is Pb x Ba x Bi 1-2x CuSeO; The concrete steps of described preparation method are:

[0041] The first step, according to bismuth oxide powder: copper powder: selenium powder: bismuth powder: lead powder: the ratio of the amount of substance of barium oxide powder is (1-x): 3: 3: (1-4x): 3x: 3x The ingredients are mixed evenly to obtain a mixed powder.

[0042] In the second step, the mixed powder is loaded into a high-energy planetary ball mill, and ball milled for 5 to 7 hours under an inert atmosphere. The mass ratio of the ball to material during ball milling is (10 to 15): 1, and the rotating speed is 200 to 350 r / min. Produced Pb x Ba x Bi 1-2x CuSeO powder.

[0043] The third step, the Pb x Ba x Bi 1-2xPut the CuSeO powder into the mold, place it in the plasma ...

Embodiment 2

[0049] A Pb / Ba double-doped BiCuSeO thermoelectric material and a preparation method thereof. The chemical formula of the Pb / Ba double-doped BiCuSeO thermoelectric material described in this embodiment is Pb x Ba x Bi 1-2x CuSeO; The concrete steps of described preparation method are:

[0050] The first step, according to bismuth oxide powder: copper powder: selenium powder: bismuth powder: lead powder: the ratio of the amount of substance of barium oxide powder is (1-x): 3: 3: (1-4x): 3x: 3x The ingredients are mixed evenly to obtain a mixed powder.

[0051] In the second step, the mixed powder is loaded into a high-energy planetary ball mill, and ball milled for 6 to 8 hours under an inert atmosphere. The mass ratio of the ball to material during ball milling is (12 to 17): 1, and the rotating speed is 250 to 400 r / min. Produced Pb x Ba x Bi 1-2x CuSeO powder.

[0052] The third step, the Pb x Ba x Bi 1-2x Put the CuSeO powder into the mold, put it in the plasma a...

Embodiment 3

[0058] A Pb / Ba double-doped BiCuSeO thermoelectric material and a preparation method thereof. The chemical formula of the Pb / Ba double-doped BiCuSeO thermoelectric material described in this embodiment is Pb x Ba x Bi 1-2x CuSeO, the concrete steps of described preparation method are:

[0059] The first step, according to bismuth oxide powder: copper powder: selenium powder: bismuth powder: lead powder: the ratio of the amount of substance of barium oxide powder is (1-x): 3: 3: (1-4x): 3x: 3x The ingredients are mixed evenly to obtain mixed powder;

[0060] In the second step, the mixed powder is loaded into a high-energy planetary ball mill, and ball milled for 7 to 9 hours under an inert atmosphere. The mass ratio of ball to material during ball milling is (14 to 19): 1, and the rotating speed is 300 to 450r / min. Produced Pb x Ba x Bi 1-2x CuSeO powder.

[0061] The third step, the Pb x Ba x Bi 1-2x Put the CuSeO powder into the mold, place it in the plasma activa...

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Abstract

The invention relates to a Pb / Ba double-doped BiCuSeO thermoelectric material and a preparation method thereof. Its technical scheme is: according to the ratio of the amount of bismuth oxide powder: copper powder: selenium powder: bismuth powder: lead powder: barium oxide powder: (1-x): 3: 3: (1-4x): 3x: 3x ingredients, mix well, ball mill for 5 to 12 hours in a ball mill tank and inert atmosphere; x Ba x Bi 1‑2x The CuSeO powder was loaded into the mold, placed in a plasma-activated sintering furnace, and heated to 500-700 °C at a constant speed and pressured to 30-100 MPa at a constant speed, maintained at a constant speed and pressure, and then dropped to normal temperature at a constant speed and lowered to normal pressure at a constant speed. The sintered mold is taken out and demolded to obtain a Pb / Ba double-doped BiCuSeO thermoelectric material; wherein: 0.01≤x≤0.08. The invention has simple process, short production period and high production efficiency, and the prepared products have high purity, low thermal conductivity, high electrical conductivity, good electrical transmission performance, high power factor and high dimensionless thermoelectric figure of merit ZT.

Description

technical field [0001] The invention belongs to the technical field of BiCuSeO thermoelectric materials. In particular, it relates to a Pb / Ba double-doped BiCuSeO thermoelectric material and a preparation method thereof. Background technique [0002] Thermoelectric materials can realize the direct conversion of thermal energy and electrical energy, and have good application prospects in the use of high-temperature industrial low-grade waste heat and distributed low-temperature waste heat for thermoelectric power generation, and have become a research hotspot in the field of materials. The key parameter "dimensionless thermoelectric figure of merit" that determines the thermoelectric conversion efficiency of materials ZT=(S 2 σ / κ)T; where: S is the Seebeck coefficient, σ is the electrical conductivity and κ is the thermal conductivity, and T is the temperature. A good thermoelectric material should meet the requirements of high electromotive force, high electrical conductiv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34H01L35/16H10N10/01H10N10/852
CPCH10N10/852H10N10/01
Inventor 樊希安冯波江程鹏李光强贺铸李亚伟
Owner WUHAN UNIV OF SCI & TECH
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