A Trace Cu-doped Bi2S3-Based Thermoelectric Material

A thermoelectric material and trace technology, which can be applied in the direction of thermoelectric device junction lead-out material, etc., which can solve the problems of reducing thermal conductivity and difficult to improve power factor at the same time.

Inactive Publication Date: 2011-12-14
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is in order to be able to prepare trace Cu-doped Bi simply, conveniently and accurately 2 S 3 The base bulk material solves the problem that it is difficult to simultaneously improve the power factor and reduce the thermal conductivity in the process of optimizing the performance of thermoelectric materials, and greatly improves the Bi 2 S 3 Thermoelectric properties of bulk materials

Method used

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  • A Trace Cu-doped Bi2S3-Based Thermoelectric Material
  • A Trace Cu-doped Bi2S3-Based Thermoelectric Material
  • A Trace Cu-doped Bi2S3-Based Thermoelectric Material

Examples

Experimental program
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Effect test

example 1

[0011] Weigh high-purity (99.99%) Cu powder, Bi powder and S powder according to the molar ratio of Cu: Bi : S 0.001:1.999:3, mix them, put them into a ball mill jar, vacuumize and fill with Ar gas, and cycle three times , make the Ar gas fill the ball mill jar, and seal the ball mill jar. Then put the ball milling jar into the ball mill and mill at 400 rpm for 10 hours. After the completion, take out the ball milling jar and inject 100 ml of absolute ethanol into the ball milling jar. Grind for 30 minutes. The powder was taken out and dried in a drying oven at 80 °C for 2 h. The dry powder was sintered into a block by spark plasma, the diameter of the mold was 20 mm, the heating rate was 100 ℃ / min, the temperature was 300 ℃, the pressure was 20 Pa, and the holding time was 5 min. Finally, trace copper-doped Cu 0.001 Bi 1.999 S 3 Thermoelectric material, tested and calculated to have a power factor of 200 μWm at 573 K -1 K -2 , with a thermal conductivity of 0.6 Wm -1 ...

example 2

[0013] Weigh high-purity (99.99%) Cu powder, Bi powder and S powder according to the molar ratio of Cu: Bi : S 0.002:1.998:3, mix them, put them into a ball mill jar, vacuumize and fill with Ar gas, and cycle three times , make the Ar gas fill the ball mill jar, and seal the ball mill jar. Then put the ball milling jar into the ball mill and mill at 450 rpm for 15 h. After the completion, take out the ball milling jar and inject 100ml of absolute ethanol into the ball milling jar. Grind for 1 h. The powder was taken out and dried in a drying oven at 80 °C for 12 h. The dry powder was sintered into a block by spark plasma, the diameter of the mold was 10 mm, the heating rate was 100 °C / min, the temperature was 550 °C, the pressure was 60 Pa and the holding time was 5 min. Finally, trace copper-doped Cu 0.002 Bi 1.998 S 3 Thermoelectric material, tested and calculated to have a power factor of 240 μWm at 573 K -1 K -2 , with a thermal conductivity of 0.54 Wm -1 K -1 . ...

example 3

[0015] Weigh high-purity (99.99%) Cu powder, Bi powder and S powder according to the molar ratio of Cu: Bi : S 0.007:1.995:3, mix them, put them into a ball mill jar, vacuumize and fill with Ar gas, and cycle three times , make the Ar gas fill the ball mill jar, and seal the ball mill jar. Then put the ball mill jar into the ball mill, mill at 300 rpm for 20 h, take out the ball mill jar after completion, and inject 100 ml of absolute ethanol into the ball mill jar, during this process, keep the Ar gas flowing to avoid damaging the inert protective atmosphere, 425 rpm Wet grinding for 3 h. The powder was taken out and dried in a drying oven at 80 °C for 8 h. The dry powder was sintered into a block by spark plasma, the diameter of the mold was 25 mm, the heating rate was 100 °C / min, the temperature was 400 °C, the pressure was 40 Pa, and the holding time was 5 min. Finally, trace copper-doped Cu 0.007 Bi 1.993 S 3 Thermoelectric material, tested and calculated to have a p...

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Abstract

The invention belongs to the technical field of energy materials and in particular relates to a trace Cu-doped Bi2S3-based thermoelectric material. In the thermoelectric material, metal simple substance Bi and Cu powder with the purity of 99.99 percent and simple substance S powder serve as raw materials, the thermoelectric material is prepared according to a chemical general formula of CuxBi2-xS3, wherein x is mole fraction of a Cu component and x is more than or equal to 0.001 and less than or equal to 0.05, and the thermoelectric material is prepared into a block material by combining a discharge plasma sintering technology and a mechanical alloying method. By the method, the trace Cu-doped Bi2S3-based block thermoelectric material can be easy and convenient to prepare, trace Cu is introduced into a Bi2S3 lattice, the carrier concentration of a sample is improved, a power factor is optimized, a Cu-S nano deposition coherent with a substrate structure is formed, and the thermal conductivity is greatly reduced; therefore, the thermoelectric performance of the Bi2S3-based block material can be greatly improved.

Description

technical field [0001] The invention belongs to the technical field of energy materials, in particular to a trace amount of Cu-doped Bi 2 S 3 based thermoelectric materials. Background technique [0002] With the continuous development of social economy, environmental and energy issues are paid more and more attention by human beings. Thermoelectric materials can directly realize the mutual conversion of heat energy and electric energy. Thermoelectric devices are pollution-free, zero-emission, light in structure, small in size and long in life, and are increasingly attracting people's attention. Thermoelectric modules with thermoelectric devices as core components have broad application prospects in semiconductor refrigeration and thermoelectric batteries. In the competition with conventional refrigeration methods and traditional power sources, the key to realizing the wide application of thermoelectric devices is to improve the efficiency of thermoelectric cooling and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/16
Inventor 张波萍葛振华于昭新刘勇
Owner UNIV OF SCI & TECH BEIJING
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