30results about How to "Control stoichiometric ratio" patented technology

The invention belongs to the technical field of energy materials and in particular relates to a trace Cu-doped Bi2S3-based thermoelectric material. In the thermoelectric material, metal simple substance Bi and Cu powder with the purity of 99.99 percent and simple substance S powder serve as raw materials, the thermoelectric material is prepared according to a chemical general formula of CuxBi2-xS3, wherein x is mole fraction of a Cu component and x is more than or equal to 0.001 and less than or equal to 0.05, and the thermoelectric material is prepared into a block material by combining a discharge plasma sintering technology and a mechanical alloying method. By the method, the trace Cu-doped Bi2S3-based block thermoelectric material can be easy and convenient to prepare, trace Cu is introduced into a Bi2S3 lattice, the carrier concentration of a sample is improved, a power factor is optimized, a Cu-S nano deposition coherent with a substrate structure is formed, and the thermal conductivity is greatly reduced; therefore, the thermoelectric performance of the Bi2S3-based block material can be greatly improved.

The invention relates to a gasoline selective hydrodesulfurization catalyst and preparation and application thereof. According to the total mass of the catalyst being 100%, the catalyst is prepared from 3-15 wt% of VIII group metal, 45-58 wt% of Mo and 35-40 wt% of S. A preparation method of the catalyst comprises the following steps that 1, a defect-rich molybdenum disulfide nanosheet precursor with a non-stoichiometric ratio is prepared; 2, one kind of VIII group metal is added into the molybdenum disulfide nanosheet precursor through an ultrasonic assisting dipping method, the molar ratio of the VIII group metal to Mo is (0.1-0.5):1, the specific surface area of the molybdenum disulfide nanosheet precursor ranges from 40 m<2>/g to 90 m<2>/g, the pore volume ranges from 0.1 ml/g to 0.25 ml/g, and the molar ratio of sulfur to molybdenum is (1.92-2.10):1. Defect-rich molybdenum disulfide is prepared by controlling the stoichiometric ratio of molybdenum disulfide, and meanwhile more active loci are exposed. Compared with an existing catalyst, the catalyst is applied to a gasoline selective hydrodesulfurization reaction, the hydrogenation saturation factor of olefin is low, and the hydrodesulfurization rate of a sulfur-containing compound is high.

The invention discloses a weather-resistant silver mirror which is particularly suitable for trough solar thermal power generation and a preparation method thereof. The silver mirror orderly consists of a transparent substrate, a first Al2O3 adhesive layer, an Ag reflective layer, a second Al2O3 adhesive protective layer and a SiOx protective layer. The preparation method thereof comprises the step of orderly and respectively plating the first Al2O3 adhesive layer, the Ag reflective layer, the second Al2O3 adhesive protective layer and the SiOx protective layer by adopting a multi-target intermediate frequency response vertical magnetic control sputter to prepare the weather-resistant silver mirror of the invention. The finished product of the weather-resistant silver mirror of the invention has the characteristics of high reflectivity, reliable work, long service life and the like. The preparation method of the invention has the characteristics of advance, reasonability, low cost, low energy consumption, good quality of the finished product and the like.

The invention discloses a preparation method of lithium titanate. The preparation method is characterized by comprising the following steps of: combining TiO2 powder which is wrapped by using a carbon source or is mixed by using a carbon material or a tabletting with a metal current collector so as to be used as a cathode; by taking graphite as an anode and taking a molten alkali halide as an electrolyte, electrolyzing for 1-5 hours in an argon atmosphere at an electrolysis temperature of 400-700 DEG C under an electrolysis voltage of 2.0-3.2V, cooling down to be the normal temperature and taking out, subsequently washing in distilled water or an organic solvent, and drying in vacuum so as to obtain LiTiO2 which is wrapped by using the carbon source or is mixed by using the carbon material; washing an electrolysis product, drying the electrolysis product in vacuum, and subsequently firing for 1-3 hours at 600-900 DEG C in air so as to obtain Li4Ti5O12. By utilizing the method, product grain size controllability is realized, and the problems of product batch stability and consistence caused by in-scale production are solved. The lithium titanate prepared by using the method can be used as an energy material to be directly applied to lithium ion secondary batteries and super-capacitors.

The invention discloses a method for preparing a lithium-nickel-cobalt-aluminium oxide material by adopting low-heat solid-phase reaction. The method comprises the following steps: a. preparing a precursor, namely weighing lithium hydroxide monohydrate, nickel nitrate hexahydrate, cobalt nitrate hexahydrate, lithium nitrate nonahydrate and a doping element M according to stoichiometry of LiNi(0.8)Co(0.15)Al(0.05+/-x)M(y)O(2), wherein x is greater than or equal to 0 and is less than or equal to 0.05, y is greater than or equal to 0 and is less than or equal to 0.05, x+y is equal to 0.05, M is B, Zr, Ti or AlPO4, mixing in a high-speed mixer at the rotating speed of 2000r/m for 15 minutes according to a stoichiometric ratio so as to obtain a synthesized material, and drying the synthesized material at the temperature of 120-150 DEG C in vacuum so as to prepare the precursor; and b. roasting the precursor prepared in the step a at the temperature of 600-800 DEG C in an oxygen atmosphere or an air atmosphere so as to obtain the final product-lithium-nickel-cobalt-aluminium oxide material. The method has the following advantages that the stoichiometric ratio of the components is relatively easy to control, the components are uniformly mixed, the synthesis temperature can also be reduced, and the energy consumption and the production cost are reduced.

A preparation method of a CIST nano wire belongs to the technical field of new-generation thin-film solar cell materials. A toluene solution of Bi nanoparticles and a precursor solution of Se and Te are prepared separately. Then under the protection of nitrogen, trioctylphosphine is heated and added into the toluene solution of the Bi nanoparticles, and then the precursor solution containing indium acetate, copper acetate and Se is added into the mixture. After reactions, the precursor solution containing indium acetate, copper acetate and Se is added drop by drop. After reactions are completed, the mixture is cooled and toluene is added. Then the mixture is subjected to centrifugation. The solid phase is taken, is washed with toluene, and is subjected to centrifugation and vacuum drying. Then the CIST nano wire is obtained. The method uses the metal Bi nanoparticles as a catalyst. The toluene solution of the Bi nanoparticles is used, so that the concentration of the Bi nanoparticles can be effectively controlled, and the liquid form facilitates taking the catalyst. The method is simple in technique, can effectively control the stoichiometric ratio of multi-component materials, and obtains a large batch of high-purity CIST nano wires.

The invention relates to a new film formation method of an n-type In2S3 buffer layer and application. According to the film formation method and the application, the shortcomings in the prior art for manufacturing the In2S3 buffer layer are overcome. The film formation method includes the steps of manufacturing an In2S3 cake, manufacturing an In2S3 target material block, manufacturing In2S3 thin film, conducting annealing, and obtaining the n-type indium sulfide buffer layer with the electrical resistivity smaller than or equal to 5*10<-3>Ohm cm. By means of a solar cell obtained by a product of the new film formation method, the open-circuit voltage is 0.29 V, and the short-circuit current is 7.7 nA. The new film formation method has the advantages that the film formation method and the product are good in thin film uniformity coincidence, good in conductivity, stable in chemical constitution, free of environmental pollution and the like.

The invention provides a preparation method of yttrium phosphate vanadate europium-doped or samarium-doped luminescent microspheres. The method comprises the steps of firstly, compounding yttrium oxide and europium oxide or samarium oxide into nitric acid solutions; mixing the yttrium nitrate solution with the europium nitrate solution (or the samarium nitrate solution); adding a complexing agent to an obtained mixed solution, and conducting stirring at the normal temperature of 25 +/- 1 DEG C; stirring NH<4>VO<3>, nitric acid, NH<4>H<2>PO<4> and water, obtaining a clear light-yellow solution, adding the obtained mixed turbid solution to the light-yellow solution, adjusting pH with nitric acid and ammonia water, conducting stirring and mixing, obtaining a yellow turbid solution, transferring the yellow turbid solution into a hydro-thermal reaction kettle for a hydro-thermal reaction, conducting cooling, centrifugation and washing after the hydro-thermal reaction is ended, and obtaining the yttrium phosphate vanadate europium-doped or samarium-doped luminescent microspheres. The preparation method has the advantages of being low in reaction temperature, low in equipment requirement and simple in operation, and the obtained yttrium phosphate vanadate europium-doped or samarium-doped luminescent microspheres are controllable in morphology and good in luminescence property.

The invention discloses a method for preparing rare earth doped NaBiF4 nanoparticles by an ultrasonic solution method and application thereof. The method comprises the following steps: dissolving a bismuth source and a sodium source in a solvent to prepare a solution A; adding nitrate containing rare earth into the solution A, and then dispersing inorganic salt of fluoride into a solvent to prepare a solution B; and mixing the solution B and the solution A to prepare a mixed solution, mixing the solution B and the solution A to form a milk white mixed solution under the action of ultrasonic phonation, and completing the growth of the nanocrystals through rapid nucleation and subsequent kinetic competition process of the nanocrystals; then carrying out solid-liquid separation to obtain white powder C, and drying the powder C to obtain NaBiF4-based nano powder with a hexagonal phase structure. The method is simple and feasible in process and good in repeatability, the whole reaction system does not pollute the environment, and the provided process route not only has good application prospects and economic benefits, but also has important practical value.

The invention relates to a method for rapidly preparing a single-phase Bi2S3 thermoelectric compound. The method comprises the following steps: (1), preparing Bi powder and S powder as raw materials at a stoichiometric ratio Si:S = 2:3.06, the sulfur powder material being excessive by 2% relative to the stoichiometric ratio of compound Bi2S3, and then grinding and thoroughly mixing them to obtain reactants; (2), initiating the reactants obtained in step (1) to take place a self-propagating reaction or thermal explosion reaction, and after the reaction is completed, naturally cooling to obtain a single-phase Bi2S3 thermoelectric compound. The method provided by the invention has the advantages of high reaction speed, simple equipment, good repeatability, high efficiency, energy conservation and the like.

The invention discloses a method of catalytic preparation of copper-indium-tellurium nanowires, and belongs to the field of production technologies of a new generation of film solar cell materials. The method comprises the following steps: respectively preparing methylbenzene solution of bismuth nanoparticles and precursor solution containing indium acetate, copper acetate and tellurium, heating trioctylphosphine under the protection of nitrogen, adding the methylbenzene solution of the bismuth nanoparticles, dropping the precursor solution containing the indium acetate, the copper acetate and the tellurium, after the reaction is completed, cooling and injecting methylbenzene, centrifuging, taking a solid phase and drying in vacuum after centrifugal washing through methylbenzene so as to obtain the copper-indium-tellurium nanowires. According to the method, the metal bismuth nanoparticles can be taken as a catalyst, the adopted instrument and equipment are cheap, the operation process is simple, a stoichiometric ratio of multi-component materials is effectively controlled to obtain the high-purity copper-indium-tellurium nanowires, and a large batch of high-quality nanowires can be produced. In addition, the length of the nanowires can be controlled through adjusting the concentration of the bismuth nanoparticles or the concentration of the precursor.

The invention discloses a rare earth doped Bi2Ti4O11 high-purity green nanofiber and a preparation method and application thereof. Glacial acetic acid and N,N-dimethylformamide are used as solvents, tetrabutyl titanate, bismuth nitrate, ytterbium nitrate and holmium nitrate are used as experimental raw materials, a proper amount of polyvinylpyrrolidone is added to improve the viscosity and conductivity of a solution, and after an electrostatic spinning precursor solution is prepared, the electrostatic spinning precursor solution is moved into an electrostatic spinning device; high pressure isapplied, the precursor solution forms a Taylor cone at a needle tip under the combined action of electric field force and surface tension, and filaments are sprayed to a collecting plate; then materials on the collecting plate are moved into a muffle furnace, heat treatment is carried out, and pure one-dimensional Bi2Ti4O11:Yb3+, Ho3+ nano materials can be obtained; and finally, under excitation of a 980nm laser device, a sample shows the excellent green up-conversion luminescence property, the luminescence intensity is decreased along with increase of the temperature, and the excellent temperature sensing property is achieved.

The invention relates to single-phase samarium titanate nano-powder prepared by using a solution method, and a method for preparing the single-phase samarium titanate nano-powder. The method comprisesthe following steps: firstly dispersing a samarium source and a titanium source into a solvent according to a molar ratio of 1 to (1.1-1.3) to obtain a solution A; adjusting the pH value of the solution A to be neutral to obtain a milk-white mixed solution B; separating the milk-white mixed solution B to obtain white powder; drying the powder obtained in the third step, and then calcining to obtain the single-phase samarium titanate nano-powder. According to the method, the aim of accurately controlling the stoichiometric ratio of ternary Sm-Ti-O chemical elements is achieved by fully dissolving and dispersing the samarium source and the titanium source in a solvent medium as well as mixing and reacting the samarium source and the titanium source at an atomic scale, so that other impurities are prevented from appearing, and the aim of preparing the single-phase Sm2Ti2O7 is further realized.

The invention provides a preparation method of alternately growing ferroelectric films, and belongs to the technical field of ferroelectric films. The preparation method comprises the following steps: weighing an organic hafnium salt and an organic metal salt with multiple doped elements according to a preset proportion, putting the weighed organic hafnium salt and organic metal salt into a container, and sequentially adding monobasic acid and an organic solvent; heating and stirring until the solution is clarified, and continuously stirring to room temperature to obtain various precursor solutions with different solution concentrations, different doping elements, different doping amounts and the like; dropwise adding two or more precursor solutions to a platinum substrate in an alternating manner for spin-coating treatment; and performing annealing operation to obtain the multi-element doped Hf < 0.5 > Zr < 0.5 > O < 2 > (HZO) ferroelectric film which grows alternately. By adopting a chemical solution deposition method, the alternately growing multi-element doped HZO ferroelectric film can be prepared under the condition of not using large equipment, the preparation process is simple, the equipment cost is low, and large-scale production is easy.