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287results about How to "Does not affect conductivity" patented technology

Ultrathin film of transparent high-strength and high-conductivity electrical self-supporting carbon nano-tube and preparation method thereof

The invention relates to an ultrathin film of a transparent high-strength and high-conductivity electrical self-supporting carbon nano-tube and a preparation method thereof. The ultrathin film mainly comprises a network consisting of interweaved carbon nano-tubes, and the application amount of the carbon nano-tubes is 0.01-0.7 mg/cm<2>; and the thickness of the film is more than 10nm, the light transmittance of the film is 50-97%, the electrical conductivity of the film is 30-500 MS/m, the tensile strength of the film can be as high as 2000MPa, and the ultrathin film has a larger area. The ultrathin film is prepared from single-walled and/or double-walled and/or multi-walled carbon nano-tubes through the steps of filtering, printing, coating and the like so as to form films, and then stripping from the formed films so as to from self-supporting films. The ultrathin film of the self-supporting carbon nano-tube provided by the invention has ultrahigh mechanical properties and excellent electronic and optical properties, therefore, the ultrathin film can be widely applied to the technical field of photoelectricity; and meanwhile, the ultrathin film is simple in process, easy to operate, good in controllability, safe and environmental-friendly, and can be prepared by using merchant carbon nano-tubes as raw materials, therefore, the ultrathin film is wide in material source and low in cost and is suitable for the industrial production on large-batch and large-area ultrathin film preparation.
Owner:SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI

Film bulk acoustic resonator and manufacturing method thereof

The invention discloses a film bulk acoustic resonator and a manufacturing method thereof. The film bulk acoustic resonator is characterized in that out of a cavity overlapping region and outside an electrode overlapping region, a first electrode plate body and a second electrode plate body respectively comprise a first vibration buffer strip and a second vibration buffer strip, so that the rigidity in the horizontal direction can be effectively reduced (the flexibility is enhanced) while the rigidity in the vertical direction is less influenced, and a buffering effect is achieved for horizontal elastic waves propagating along the electrode plate in the horizontal direction, so that the strength of elastic reflection waves is reduced. Besides, a piezoelectric induction oscillation plate clamped between the first electrode plate body and the second electrode plate body is integrally arranged in the cavity overlapping area, and the boundary of the piezoelectric induction oscillation plate is a polygon without any parallel opposite sides; and additional standing wave oscillation which becomes clutter in the horizontal direction is eliminated, and meanwhile energy consumed by transverse parasitic waves is reduced to the maximum extent. A corresponding manufacturing method is also disclosed.
Owner:芯知微(上海)电子科技有限公司

Nanowire cold cathode electron source array with self-aligned focusing structure and manufacturing method thereof

The invention discloses a nanowire cold cathode electron source array with a self-aligned focusing structure and a manufacturing method thereof. The electron source array structure comprises a substrate, a bottom cathode electrode strip, a bottom gate electrode strip, an insulating layer configured to cover the above electrode strips, an annular top gate electrode, a top cathode electrode, a focusing electrode, and a circular nanowire cold cathode array. The bottom cathode electrode strip and the bottom gate electrode strip are arranged on the substrate and are positioned in parallel with each other. The annular top gate electrode, the top cathode electrode and the focusing electrode are manufactured above the insulating layer and are connected with the bottom corresponding electrode strips through etching through holes in the insulating layer. The circular nanowire cold cathode array is manufactured on the top cathode electrode. The invention further discloses a manufacturing method of the nanowire cold cathode electron source array. According to the technical scheme of the invention, the nanowire cold cathode electron source array is provided with the self-aligned focusing structure, so that the row-by-row addressing function can be realized. The manufacturing method is simple, and the prepared nanowire cold cathode electron source array is good in capability of regulating and controlling electron emission and focusing electron beams. Therefore, the nanowire cold cathode electron source array and the manufacturing method thereof have an important application prospect in the aspect of flat plate X-ray sources.
Owner:SUN YAT SEN UNIV

Far-infrared carbon fiber composite heating film

The invention relates to a far-infrared carbon fiber composite heating film, which comprises an upper base layer, a lower base layer, a carbon fiber composite heating layer, an upper insulated flame-retardant and heat-resistant waterproof layer and a lower insulated flame-retardant and heat-resistant waterproof layer, wherein the carbon fiber composite heating layer is located between the upper base layer and the lower base layer; and the upper insulated flame-retardant and heat-resistant waterproof layer and the lower insulated flame-retardant and heat-resistant waterproof layer coat the outer sides of the upper base layer and the lower base layer, wherein the far-infrared carbon fiber composite heating film is preferably carbon fiber cloth or carbon fiber composite paper. The far-infrared carbon fiber composite heating film is simple in structure, has good flexibility and can be freely cut and folded; the flexibility is not affected in a low-temperature condition; the load resistance deviation does not exceed 8% after a single side is folded for 1,000 times at a speed of 30times / min; the security and the stability are significantly improved; the service life is long; and furthermore, the far-infrared carbon fiber composite heating film has high external insulativity, high-temperature resistance, open fire resistance and waterproofness, the internal conductivity and the heating property are good and the security is high.
Owner:石家庄邦迪高分子材料有限公司

Bipolar plate for a high-temperature fuel cell, and manufacturing method thereof

The invention provides a bipolar plate for a high-temperature fuel cell, and a manufacturing method thereof. In the prior art, the fuel cell stack bipolar plate needs to meet the circulation requirements of fuels, oxidants and cooling mediums. According to the bipolar plate, based on the problem in the prior art, the circumferential surface of a cathode plate is coated with an adhesive material through a screen printing technology and positioning design in a scraping coating manner, wherein the adhesive material meets fuel cell working environment requirements; the cathode plate is precisely aligned to an anode plate through a positioning groove, and standing curing is performed to obtain a bipolar plate; the bipolar plate comprises an anode plate, a cooling channel and a cathode plate, wherein both sides of the cathode plate are respectively provided with a flowing channel, the single surface of the anode plate is provided with a flowing channel, and the cathode plate surface with thecooling medium flowing channel is adhered to the anode plate surface with no flowing channel to form the bipolar plate, and the cooling medium flowing channel is formed between the two plates, such that the cooling medium flowing channel is additionally arranged without the increasing of the thickness; and the adhesive liquid distribution and the thickness can be precisely controlled through thescreen printing technology, such that the two plates can be integrally adhered within a certain adhesive liquid thickness range while the conductivity of the bipolar plate is not affected.
Owner:DALIAN INST OF CHEM PHYSICS CHINESE ACAD OF SCI

Carbon nanotube paper and preparation method thereof

The invention belongs to the technical field of carbon nano materials, and particularly to carbon nanotube paper. The carbon nanotube paper comprises carbon nanotubes and chemical fibers. The invention also relates to a preparation method of the carbon nanotube paper, and the preparation method comprises the following steps: step one, placing the carbon nanotubes in an alcohol solvent, conductingultrasonic dispersion, placing the chemical fibers in an alcohol solvent, and conducting high-speed dispersion; step two, mixing the chemical fiber dispersion liquid with the carbon nanotube dispersion liquid to obtain a uniform mixed solution; step three, placing the uniform mixed solution in a corresponding filter device, conducting filtering, and forming carbon nanotube wet paper with uniform thickness on a filter membrane; step four, placing the carbon nanotube wet paper and the filter membrane into a drying oven together, and carrying out baking; and step five, stripping dried carbon nanotube paper from the filter membrane, and carrying out roll pressing by using a roller press. The carbon nanotube paper provided by the invention is low in cost, high in purity, and convenient in transfer; and the preparation method has few preparation processes, and is suitable for large-scale production.
Owner:柔电(武汉)科技有限公司

Preparation method of negative electrode plate of nickel-metal hydride battery

ActiveCN102779981AHigh current charge and discharge effect is improvedHigh current charging and discharging effect is goodAlkaline accumulator electrodesCarbon nanotubeSlurry
The invention discloses a preparation method of negative electrode plate of a nickel-metal hydride battery. The preparation method comprises: (1) mixing nano metal hydride alloy, carbon nanotubes and nanographite with a particle size of 5 to 100 nm, and an active substance mixture with a particle size of 5 to 35nm according to a mass ratio of 3:1:1 to 3:0.5:0.5 to obtain a mixture, and preparing a slurry from the mixture, polytetrafluoroethylene (emulsion), and distilled water, wherein polytetrafluoroethylene (emulsion) and distilled water respectively account for 1.5% to 3% and 15% to 30% the mass of the mixture of nano metal hydride alloy, carbon nanotubes and nanographite; and (2) coating the slurry prepared in step (1) on a negative current collector, oven-drying, pressing by a roll crusher, so that the active substance slurry forms an electrode active substance coating on the current collector, cutting, and ultrasonic or laser welding 1 to 5 negative electrode lugs at the reserved blank positions of the current collector. The battery provided by the invention has the advantages of high cycling capacity, long service life and storage life, good large-current discharge effect, and high safety performance.
Owner:广州云通锂电池股份有限公司

LDMOS device and forming method thereof

The invention discloses an LDMOS device and a forming method thereof. The LDMOS device comprises a semiconductor substrate, a drift region, a shallow trench isolation structure, a doping layer, a gate structure, a source region and a drain region. A well region is located in the semiconductor substrate. The drift region is located in the well region, and the doping type of the drift region is opposite to the doping type of the well region. The shallow trench isolation structure is placed in the drift region, and the depth of the shallow trench isolation structure is smaller than the depth of the drift region. The doping layer is placed at the bottom of the shallow trench isolation structure, and the doping type of the doping layer is opposite to the doping type of the drift region. The gate structure is placed on the semiconductor substrate, one end of the gate structure extends to the position above the well region, and the other end of the gate structure extends to the position above the shallow trench isolation structure. The source region is located in the well region on one side of the gate structure, and the drain region is located in the drift region on the other side of the gate structure. The breakdown voltage of the LDMOS device is kept unchanged, and meanwhile drive currents are increased.
Owner:SEMICON MFG INT (SHANGHAI) CORP
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