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Bonding copper wire and preparation method thereof

A copper wire and bonding technology, applied in the field of bonding copper wire and its preparation, can solve problems such as stress concentration, uneven dispersion, complex process, etc., to improve surface oxidation resistance, improve oxidation resistance, and improve comprehensive performance Effect

Inactive Publication Date: 2011-02-23
蔡元华
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process mainly has the following defects: first, in this process, the billet of bonded copper wire is produced by horizontal continuous casting, and the process of horizontal continuous casting is very complicated and difficult to control; second, the intermediate After the alloy and copper are fused, horizontal continuous casting without any process treatment will lead to uneven dispersion of other metal elements in the copper alloy, thereby affecting the mechanical properties of the product; third, the bonded copper after horizontal continuous casting There is a phenomenon of stress concentration in the silk blank, and if it is not annealed for stress relief, it will cause defects in the finished product, thereby affecting the mechanical properties of the product
However, this manufacturing method still has the following defects: the copper alloy ingot formed by casting has stress concentration, and it is directly rolled without performing relevant heat treatment, and the mechanical properties of the product are not uniform, which will affect the service life of the finished product

Method used

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  • Bonding copper wire and preparation method thereof
  • Bonding copper wire and preparation method thereof
  • Bonding copper wire and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0039] according to figure 1 With the components and contents shown, a copper bonding wire with a diameter of 20 μm was prepared.

[0040] For the preparation method of bonding copper wire, see Figure 7 , the specific process is as follows:

[0041] 1. Preparation of master alloy: Take the preparation of Cu-Al alloy as an example to illustrate the preparation of master alloy.

[0042] According to the proportion relationship that the elemental Al accounts for 1%-3% of the total mass of the Cu-Al master alloy, and the balance is 6N copper, the elemental Al and 6N copper are weighed. Put the weighed elemental Al into the feeding bin of the vacuum furnace, and then put 6N copper into the melting crucible of the vacuum furnace. Vacuum to 10 -3 After Pa, backfill argon to the slight positive pressure in the vacuum furnace, and start to melt 6N copper. After the 6N copper is melted and cleared, the elemental Al is added to the copper melt through the feeding mechanism, and the ...

Embodiment approach 2

[0052] according to figure 2 With the components and contents shown, a copper bonding wire with a diameter of 20 μm was prepared.

[0053] For the preparation method of bonding copper wire, see Figure 7 , the specific process is as follows:

[0054] 1. Preparation of master alloy: Take the preparation of Cu-Al alloy as an example to illustrate the preparation of master alloy.

[0055] According to the proportion relationship that the elemental Al accounts for 1%-3% of the total mass of the Cu-Al master alloy, and the balance is 6N copper, the elemental Al and 6N copper are weighed. Put the weighed elemental Al into the feeding bin of the vacuum furnace, and then put 6N copper into the melting crucible of the vacuum furnace. Vacuum to 10 -3 After Pa, backfill argon to the slight positive pressure in the vacuum furnace, and start to melt 6N copper. After the 6N copper is melted and cleared, the elemental Al is added to the copper melt through the feeding mechanism, and the...

Embodiment approach 3

[0065] according to image 3 With the components and contents shown, a copper bonding wire with a diameter of 20 μm was prepared.

[0066] For the preparation method of bonding copper wire, see Figure 7 , the specific process is as follows:

[0067] 1. Preparation of master alloy: Take the preparation of Cu-Al alloy as an example to illustrate the preparation of master alloy.

[0068] According to the proportion relationship that the elemental Al accounts for 1%-3% of the total mass of the Cu-Al master alloy, and the balance is 6N copper, the elemental Al and 6N copper are weighed. Put the weighed elemental Al into the feeding bin of the vacuum furnace, and then put 6N copper into the melting crucible of the vacuum furnace. Vacuum to 10 -3 After Pa, backfill argon to the slight positive pressure in the vacuum furnace, and start to melt 6N copper. After the 6N copper is melted and cleared, the elemental Al is added to the copper melt through the feeding mechanism, and the ...

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Abstract

The invention relates to a bonding copper wire and a preparation method thereof. The bonding copper wire comprises the following components in percentage by mass: 0.0003 percent to 0.003 percent of lithium, 0.0002 percent to 0.002 percent of calcium, 0.0002 percent to 0.001 percent of aluminium, 0.0005 percent to 0.005 percent of cerium and / or yttrium, 0.0001 percent to 0.001 percent of other inevitable impurity elements and the balance of copper. The preparation method of the bonding copper wire comprises the following steps of: preparing a middle alloy, preparing an alloy cast ingot, annealing uniformly, heat extrusion, stress relief annealing, drawing, final annealing, winding for multiple coils, packaging, and final protective packaging, wherein in a drawing process, middle stress relief annealing can be performed according to practical needs. The bonding copper wire has better inoxidizability while keeping better conduction and radiation properties; in the preparation process of the bonding copper wire, the uniform annealing is added and the middle stress relief annealing is performed, so that the mechanical property of the prepared bonding copper wire is better.

Description

technical field [0001] The invention relates to a semiconductor packaging lead material and a production process thereof, in particular to a bonding copper wire and a preparation method thereof. Background technique [0002] As a bonding material for semiconductor and integrated circuit packaging leads, its special application environment has put forward higher requirements for its thermal conductivity, surface oxidation resistance, tensile performance, and welding performance. [0003] Chinese patent document CN1949493A discloses a bonding copper wire. The material formula of the bonding copper wire disclosed in this document is: calcium 0.0005%-0.001%, cerium or titanium 0.0003-0.0007%, and the balance is copper, and its content is not Below 99.9996%. Using the copper wire disclosed in this document as the bonding material reduces the price of the bonding wire on the one hand, and on the other hand meets the requirements for high electrical conductivity and bonding wire s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/02C22F1/08H01B1/02C22C9/00C22C1/03
CPCH01L24/43H01L2224/43H01L2224/45H01L2224/45147H01L2924/00011H01L2924/01206H01L2924/01003H01L2924/01013H01L2924/0102H01L2924/01058H01L2924/01039H01L2924/013H01L2924/00H01L2924/00012H01L2924/01005H01L2924/01004
Inventor 梁瑞光蔡元利吴国防魏伟陈春笋蔡元华
Owner 蔡元华
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