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Method for preparing composite membrane for improving oxidation resistance of copper lead of integrated circuit

An integrated circuit copper and anti-oxidation technology, applied in the field of metal surface anti-oxidation, can solve the problems of poor matrix bonding, limited anti-oxidation ability, and insufficient surface density, so as to improve the anti-oxidation ability, inhibit further oxidation, and improve anti-oxidation. effect of ability

Inactive Publication Date: 2012-03-21
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Adding some alloying elements to pure Cu, such as Ni, Cr, Ti, etc., can improve the oxidation resistance of pure Cu, but when the above alloying elements are added, the resistance of the copper alloy will increase, thereby affecting its electrical conductivity
However, when Mg, an alloying element with relatively low resistivity, is added to pure copper to form a CuMg alloy, after the alloy is annealed, the MgO oxide film formed on the surface is discontinuous, the surface is not dense enough, and the combination with the matrix is ​​poor, so its oxidation resistance limited ability

Method used

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  • Method for preparing composite membrane for improving oxidation resistance of copper lead of integrated circuit
  • Method for preparing composite membrane for improving oxidation resistance of copper lead of integrated circuit
  • Method for preparing composite membrane for improving oxidation resistance of copper lead of integrated circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] a, the purity of block is 99.99wt.% of pure Cu and granular purity of 99.99wt.% pure Al mixed, the content of pure Cu in the mixture is 99.8wt.%, and the content of pure Al is 0.2wt.%.

[0032] b. Put the mixed material in the electric arc furnace, close the furnace door, and then vacuumize the furnace body. When the vacuum reaches 0.5Pa, stop the vacuum pumping, and feed high-purity argon gas with a purity of 99.9999% into the electric arc furnace , the flow rate is 3000cm 3 / min, the air pressure is one atmosphere;

[0033] c. Start the electric arc furnace, set the discharge power to 2kW through glow discharge, heat up the Cu and Al alloy elements to 1200°C to melt, stop melting after melting at 1200°C for 5 minutes, cool down to room temperature, turn on the furnace, and turn it up and down After turning over the material, close the furnace door, and then vacuumize the furnace body again. When the vacuum reaches 0.5Pa, stop vacuuming, feed high-purity argon gas wit...

Embodiment 2

[0037] a. Mixing block-shaped pure Cu with a purity of 99.99wt.% and granular purity of 99.99wt.% pure Al, the content of pure Cu in the mixture is 99.0wt.%, and the content of pure Al is 1.0wt.%.

[0038] b. Put the mixed material in the electric arc furnace, close the furnace door, and then vacuumize the furnace body. When the vacuum reaches 0.5Pa, stop the vacuum pumping, and feed high-purity argon gas with a purity of 99.9999% into the electric arc furnace , the flow rate is 3000cm 3 / min, the air pressure is one atmosphere;

[0039] c. Start the electric arc furnace, set the discharge power to 2kW through glow discharge, heat up the Cu and Al alloy elements to 1200°C to melt, stop melting after melting at 1200°C for 5 minutes, cool down to room temperature, turn on the furnace, and turn it up and down After turning over the material, close the furnace door, and then vacuumize the furnace body again. When the vacuum reaches 0.5Pa, stop vacuuming, feed high-purity argon ga...

Embodiment 3

[0043] a. Mixing block-like pure Cu with a purity of 99.99wt.% and granular purity of 99.99wt.% pure Al, the content of pure Cu in the mixture is 98.0wt.%, and the content of pure Al is 2.0wt.%.

[0044] b. Put the mixed material in the electric arc furnace, close the furnace door, and then vacuumize the furnace body. When the vacuum reaches 0.5Pa, stop the vacuum pumping, and feed high-purity argon gas with a purity of 99.9999% into the electric arc furnace , the flow rate is 3000cm 3 / min, the air pressure is one atmosphere;

[0045] c. Start the electric arc furnace, set the discharge power to 2kW through glow discharge, heat up the Cu and Al alloy elements to 1200°C to melt, stop melting after melting at 1200°C for 5 minutes, cool down to room temperature, turn on the furnace, and turn it up and down After turning over the material, close the furnace door, and then vacuumize the furnace body again. When the vacuum reaches 0.5Pa, stop vacuuming, feed high-purity argon gas ...

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Abstract

The invention relates to a method for preparing a composite membrane for improving oxidation resistance of a copper lead of an integrated circuit. The method comprises the following steps of: mixing a little amount of Al and Cu, and repeatedly smelting the mixture in an electric arc furnace to form CuAl alloy; and annealing the CuAl alloy in a heating furnace under hydrogen atmosphere, preservingthe heat for certain time, and cooling the annealed product to room temperature to form anti-oxidation copper. After Al element is added, the alloy is annealed in the hydrogen, the Al in the alloy issegregated to the surface of Cu through segregation action and reacts with the rest O in the annealing atmosphere to generate Al2O3 on the surface of the alloy, and a Cu-Al2O3 composite attached membrane with good mechanical property is formed on the surface of the Cu so as to block further oxidation of the Cu and well solve the problem of oxidation of a connecting wire in the copper. The encapsulation temperature of an encapsulation material in the conventional integrated circuit is below 400 DEG C, and the Cu-Al2O3 composite attached membrane formed on the surface of the integrated circuit by using the CuAl alloy as a lead frame material improves the anti-oxidation capability of the lead material and reduces the encapsulation cost.

Description

Technical field: [0001] The invention relates to a method for anti-oxidation of metal surfaces, especially to generate Cu-Al on the surface of Cu by adding Al element when smelting Cu 2 O 3 The composite protective film improves the anti-oxidation ability of the surface of the copper component of the integrated circuit lead frame material. Background technique: [0002] The process improvement of the interconnection wire in the integrated circuit is an important factor to promote the development of the integrated circuit. With the continuous improvement of integrated circuit integration, the size of interconnection lines will be further reduced. In order to adapt to this trend, Cu, which has higher conductivity, is currently used instead of Al for the interconnection lines in integrated circuits. Cu has a higher melting point (melting point: 1089°C) than Al (melting point: 660°C). In recent years, as electronic devices and integrated circuit chips in the field of microel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C1/02C22F1/08
Inventor 朱永福吕海波李建忱文子赵明蒋青
Owner JILIN UNIV
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