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Preparation method of alternately growing ferroelectric film

A ferroelectric thin film and alternate growth technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of poor ferroelectricity and durability, and achieve low error rate, low experimental hardware conditions and low cost requirements , The effect of chemical composition is easy

Pending Publication Date: 2022-04-29
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the existing technologies all use a precursor solution to grow ferroelectric films layer by layer, so that the film still contains a certain amount of non-ferroelectric phase (monoclinic phase), and its ferroelectricity and durability are poor.

Method used

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  • Preparation method of alternately growing ferroelectric film
  • Preparation method of alternately growing ferroelectric film
  • Preparation method of alternately growing ferroelectric film

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preparation example Construction

[0043] The invention provides a method for preparing an alternately grown ferroelectric thin film, comprising the following steps:

[0044] 1) Coating the precursor solution A on the platinum substrate and then annealing to obtain the annealed A film sample;

[0045] 2) coating the precursor solution B on the annealed A film sample, and obtaining the annealed AB film sample after annealing;

[0046] The precursor solution A and the precursor solution B independently contain organic hafnium salts, organic metal salts of multi-doping elements, monobasic acids and organic solvents;

[0047] The organometallic salts of multiple doping elements in the precursor solution A and the precursor solution B are different;

[0048] 3) Taking step 1) and step 2) as a unit, repeat n-1 times to obtain (AB) n Thin film samples, for containing (AB) n The sample of the thin film is annealed to obtain an alternately grown ferroelectric thin film;

[0049] Said n≥2.

[0050] In the present inve...

Embodiment 1

[0077] Step S1: Beaker A: Use an analytical balance to weigh 0.1416g hafnium acetylacetonate, 0.1201g zirconium acetylacetonate and 0.0032g hydrate of lanthanum acetylacetonate into the beaker, then add 3ml acetic acid and 2ml acetylacetone in sequence; beaker B: use the analytical Weigh 0.1416g hafnium acetylacetonate, 0.1201g zirconium acetylacetonate and 0.0029g yttrium acetylacetonate hydrate into a beaker, then add 3ml acetic acid and 2ml acetylacetone in sequence.

[0078] Step S2: Seal the two beakers and place them in a constant temperature magnetic stirring water bath for stirring. Set the stirring temperature to 55°C respectively. Stir for 35 minutes until the solution is clear. Take out the two beakers and place them on a common magnetic stirring device for stirring for more than 2 hours. Set to room temperature to obtain precursor solution A (lanthanum acetylacetonate) and precursor solution B (yttrium acetylacetonate).

[0079] Step S3: use a 1ml dropper to drop t...

Embodiment 2

[0095] Step S1: Beaker A: Use an analytical balance to weigh 0.1416g hafnium acetylacetonate, 0.1201g zirconium acetylacetonate and 0.0032g hydrate of lanthanum acetylacetonate into the beaker, then add 3ml acetic acid and 2ml acetylacetone in sequence; beaker B: use the analytical Weigh 0.1416g hafnium acetylacetonate, 0.1201g zirconium acetylacetonate and 0.0029g strontium acetylacetonate hydrate into a beaker, then add 3ml acetic acid and 2ml acetylacetone in sequence.

[0096] Step S2 to step S9 are the same as embodiment 1;

[0097] Step S10: the obtained step S9 containing (AB) 2 The thin film samples were placed in a rapid annealing furnace and annealed for 290 seconds at a time in an oxygen environment at a temperature of 350°C.

[0098] Step S11: Put the thin film sample obtained in step S10 into a rapid annealing furnace, anneal for 250 seconds in an oxygen environment at a temperature of 600° C., and then cool with the furnace to obtain a molar doping ratio of La:(...

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Abstract

The invention provides a preparation method of alternately growing ferroelectric films, and belongs to the technical field of ferroelectric films. The preparation method comprises the following steps: weighing an organic hafnium salt and an organic metal salt with multiple doped elements according to a preset proportion, putting the weighed organic hafnium salt and organic metal salt into a container, and sequentially adding monobasic acid and an organic solvent; heating and stirring until the solution is clarified, and continuously stirring to room temperature to obtain various precursor solutions with different solution concentrations, different doping elements, different doping amounts and the like; dropwise adding two or more precursor solutions to a platinum substrate in an alternating manner for spin-coating treatment; and performing annealing operation to obtain the multi-element doped Hf < 0.5 > Zr < 0.5 > O < 2 > (HZO) ferroelectric film which grows alternately. By adopting a chemical solution deposition method, the alternately growing multi-element doped HZO ferroelectric film can be prepared under the condition of not using large equipment, the preparation process is simple, the equipment cost is low, and large-scale production is easy.

Description

technical field [0001] The invention relates to the technical field of ferroelectric thin films, in particular to a method for preparing alternately grown ferroelectric thin films. Background technique [0002] With the development of intelligent manufacturing, our lives are changing. Applications such as image recognition, speech recognition, man-machine wars, intelligent robots, deep learning, and autonomous driving are emerging in an endless stream. Data, as the core force of these technologies, is also in the stage of explosive growth. . According to statistics, in 2018, the total flash memory capacity produced globally was 0.25 ZettaBytes. According to IDC's forecast, there will be a total of 175 ZettaBytes of global data in 2025. With such an astonishing and huge amount of data, semiconductor memory will have a huge market. Ferroelectric memory has some characteristics of random access memory and read-only memory, because it has many advantages such as non-volatile,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L21/02181H01L21/02189H01L21/02282H01L21/02318
Inventor 尹路卢彬彬周益春廖敏李欣雨
Owner XIANGTAN UNIV
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