3 results about "Chemical solution deposition" patented technology

This invention discloses a method for controlling the thermal relaxation path of superconducting nanostructures and its application. This method utilizes a van der Waals integration strategy to sequentially fabricate a molybdenum disulfide layer on a silicon / silicon oxide substrate using chemical solution deposition and a niobium nitride superconducting layer using magnetron sputtering, constructing a niobium nitride / molybdenum disulfide heterostructure with intrinsic anisotropic thermal conductivity. Superconducting nanodevices with specific geometric configurations are designed for this heterostructure. Leveraging the ultra-high in-plane thermal conductivity of molybdenum disulfide and its suppressed out-of-plane heat transfer characteristics, the method achieves directional control of the internal thermal relaxation path of the superconducting nanostructure, verifying its dual advantages of optimizing thermal management and enhancing superconducting performance. The control method of this invention is mature and controllable, effectively transforming disordered thermal relaxation into directional heat transfer, significantly improving the thermal stability and integration density of superconducting devices, and providing a core solution for the thermal management of nanocircuits in fields such as superconducting quantum computing and high-sensitivity quantum detection.

The invention relates to the technical field of functional oxide thin film materials, in particular to a preparation method and application of a LaNiO3 thin film based on monoethanolamine regulation and control, and the preparation method comprises the following steps: S1, dissolving a lanthanum source and a nickel source in an organic solvent to prepare a LaNiO3 precursor solution; and S2, adding monoethanolamine into the precursor solution to serve as a stabilizer, wherein the molar ratio of the monoethanolamine to the LaNiO3 is 0.50-1.50. According to the preparation method, the monoethanolamine modified precursor is added in the chemical solution deposition process, and the temperature and time of the rapid thermal annealing process are controlled, so that collaborative optimization of film orientation, thickness and conductivity is realized, and the LaNiO3 film with high c-axis orientation, large thickness and low resistivity can be prepared on the silicon substrate; the produced film can be used as a bottom electrode to induce preferred orientation growth of functional layers such as BiFeO3 and the like, shows strong ferroelectric performance, is suitable for silicon-based integrated devices, and has the characteristics of low cost, simple process and excellent performance.

Disclosed in the present invention are a thermoelectric material powder, a thermoelectric material sintered body, and a manufacturing method therefor. The present invention comprises the steps of: preparing a precursor solution by dissolving a metal inorganic precursor in a solvent; forming a metal chalcogen compound coating layer on the surface of thermoelectric material alloy powder by stirring the thermoelectric material alloy powder into the precursor solution through a chemical solution deposition method; and preparing thermoelectric material powder by filtering and drying the thermoelectric material alloy powder in which the metal chalcogen compound coating layer is formed.