7 results about "Chemical solution deposition" patented technology

This invention discloses a method for controlling the thermal relaxation path of superconducting nanostructures and its application. This method utilizes a van der Waals integration strategy to sequentially fabricate a molybdenum disulfide layer on a silicon / silicon oxide substrate using chemical solution deposition and a niobium nitride superconducting layer using magnetron sputtering, constructing a niobium nitride / molybdenum disulfide heterostructure with intrinsic anisotropic thermal conductivity. Superconducting nanodevices with specific geometric configurations are designed for this heterostructure. Leveraging the ultra-high in-plane thermal conductivity of molybdenum disulfide and its suppressed out-of-plane heat transfer characteristics, the method achieves directional control of the internal thermal relaxation path of the superconducting nanostructure, verifying its dual advantages of optimizing thermal management and enhancing superconducting performance. The control method of this invention is mature and controllable, effectively transforming disordered thermal relaxation into directional heat transfer, significantly improving the thermal stability and integration density of superconducting devices, and providing a core solution for the thermal management of nanocircuits in fields such as superconducting quantum computing and high-sensitivity quantum detection.

The present invention relates to aqueous solutions, methods of manufacturing the same and uses thereof. The aqueous solution comprises an alkaline earth metal added in the form of a water-soluble salt, manganese at least mainly present as a citrate complex of manganese having an oxidation state of +3 or +4, and optionally a lanthanide present in the form of a water soluble complex. The aqueous precursor solutions contain metals at appropriate stoichiometric ratios for producing films of complex inorganic metal oxides by Chemical Solution Deposition (CSD). The complex inorganic metal oxides can be used as memristor materials, and generally in microelectronic, magnetic, and spintronic devices, in solid oxide fuel cells, in magnetic refrigeration, and in the fields of biomedicine, and as catalysts.

The invention relates to the technical field of functional oxide thin film materials, in particular to a preparation method and application of a LaNiO3 thin film based on monoethanolamine regulation and control, and the preparation method comprises the following steps: S1, dissolving a lanthanum source and a nickel source in an organic solvent to prepare a LaNiO3 precursor solution; and S2, adding monoethanolamine into the precursor solution to serve as a stabilizer, wherein the molar ratio of the monoethanolamine to the LaNiO3 is 0.50-1.50. According to the preparation method, the monoethanolamine modified precursor is added in the chemical solution deposition process, and the temperature and time of the rapid thermal annealing process are controlled, so that collaborative optimization of film orientation, thickness and conductivity is realized, and the LaNiO3 film with high c-axis orientation, large thickness and low resistivity can be prepared on the silicon substrate; the produced film can be used as a bottom electrode to induce preferred orientation growth of functional layers such as BiFeO3 and the like, shows strong ferroelectric performance, is suitable for silicon-based integrated devices, and has the characteristics of low cost, simple process and excellent performance.

The present invention provides a method for preparing an alternately grown ferroelectric thin film, belonging to the technical field of ferroelectric thin films. The preparation method of the present invention includes: weighing a preset proportion of an organic hafnium salt and an organic metal salt of a multi-doped element and placing them in a container, and then successively adding a monobasic acid and an organic solvent; heating and stirring until clear and then continuously stirring to room temperature to obtain a variety of precursor solutions with different solution concentrations, different doped elements, different doping amounts, etc.; dripping two or more precursor solutions onto a platinum substrate in an alternating manner for spin coating treatment; performing an annealing operation to obtain an alternately grown multi-element doped Hf 0.5 Zr 0.5 O2 (HZO) ferroelectric thin film. By using the chemical solution deposition method, an alternately grown multi-element doped HZO ferroelectric thin film can be prepared without using large-scale equipment, and the preparation process is simple, the equipment cost is low, and it is easy to scale up production.

The application belongs to the technical field of flexible electronic dielectric materials, and particularly relates to a rare earth doped layered perovskite flexible dielectric energy storage film and a preparation method thereof. 2+ The insulating layer and the (A n‑1 B n O 3n+1 ) 2‑ The perovskite layers are alternately stacked along the c-axis direction, and the doping ion Pr 3+ exists in the (Bi2O2) 2+ The insulating layer and the (A n‑1 B n O 3n+1 ) 2‑ The perovskite layers, the film is deposited on a flexible fluorophlogopite substrate, is prepared by using a chemical solution deposition method, and is obtained by sequentially performing precursor preparation, spin coating, segmented heat treatment, cycle film preparation and high-temperature crystallization. Relying on the double-dipole synergistic effect, the film synchronously improves the polarization intensity and the breakdown field strength, and the energy density and the charge and discharge efficiency are far superior to those of existing materials. The film has excellent bending cycle and charge and discharge cycle stability, can stably work in a wide frequency and wide temperature range, and is suitable for use in dielectric capacitors in flexible intelligent systems such as wearable electronics and flexible robots.

Disclosed in the present invention are a thermoelectric material powder, a thermoelectric material sintered body, and a manufacturing method therefor. The present invention comprises the steps of: preparing a precursor solution by dissolving a metal inorganic precursor in a solvent; forming a metal chalcogen compound coating layer on the surface of thermoelectric material alloy powder by stirring the thermoelectric material alloy powder into the precursor solution through a chemical solution deposition method; and preparing thermoelectric material powder by filtering and drying the thermoelectric material alloy powder in which the metal chalcogen compound coating layer is formed.

The invention relates to the technical field of semiconductors, and particularly discloses a metal type delafossite PdRhO2 film and a preparation method thereof.The preparation method comprises the following steps that a palladium source, a rhodium source and a solvent are mixed, and a precursor solution is obtained; and spin-coating the precursor solution on a pretreated growth substrate, drying, pyrolyzing and annealing to obtain the crystallized metal type delafossite PdRhO2 film. The large-size and high-quality metal type delafossite PdRhO2 thin film is prepared by preparing the stable precursor solution and then coating the precursor solution on the growth substrate based on a chemical solution deposition process in a non-vacuum environment for the first time, and the method has the advantages of low cost, simplicity and convenience in operation and the like, is suitable for large-scale production and has a wide application prospect. And a thought is provided for breaking through synthesis of a large-size PdRhO2 metal film.