99 results about "Chemical solution deposition" patented technology

The invention provides a low-cost preparing method for a high-temperature superconductive coated conductor strip and belongs to the technical field of manufacturing of high-temperature superconductive materials. The low-cost preparing method comprises the following steps that (1) the surface of a metal base band is cleaned; (2) by the adoption of the chemical solution deposition planarization (SDP) method, an isolating layer is prepared on the metal base band; (3) by the adoption of an ion beam auxiliary radio frequency magnetron sputtering method (IBAD-MgO), a biaxial texture magnesium oxide layer is prepared on the isolating layer; (4) a lanthanum manganate layer is prepared by the adoption of the radio frequency magnetron sputtering method; (5) a cerium oxide layer is prepared by the adoption of a direct-current magnetron reactive sputtering method; (6) a superconductive layer is prepared by the adoption of a metal organic deposition decomposition method (MOD); (7) a silver protective layer is prepared by the adoption of a direct-current magnetron sputtering method; (8) annealing is conducted in high-purity oxide; (9) a copper stable layer is arranged in an electroplating mode according to use requirements. According to the low-cost preparing method for the high-temperature superconductive coated conductor strip, through comprehensive application of physical preparation methods and chemical preparation methods, high-temperature superconductive strips can be produced in a large-scale mode at low cost.

The invention relates to a method for preparing a BiFeO3 ferroelectric thin film photovoltaic battery on a glass substrate, comprising the following steps of: selecting glass as a substrate; preparing a BiFeO3 ferroelectric thin film with a perovskite structure through a chemical solution deposition method; and preparing a top electrode with a size of 0.5*0.5 mm on the thin film through a physical sputtering method. Compared with the prior art, the method disclosed by the invention can be used for preparing the BiFeO3 ferroelectric and photovoltaic thin film with a perovskite structure, which has the advantages of high consistency and good repeatability on the glass substrate, by a low cost. The prepared thin film has the advantages of excellent photovoltaic property and single-directional conductive property of a diode. The BiFeO3 ferroelectric thin film can be applicable to the fields of a photovoltaic battery and an optical electronic device due to the excellent properties.

The invention relates to a preparation method of a solar battery with a bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film. The preparation method comprises the following steps of: selecting SnO2 transparent conducting glass doped with fluorine (FTO for short) as a substrate, preparing the (Na0.5Bi0.5)0.94Ba0.06TiO3 and BiFeO3 ferroelectric film by a chemical solution deposition method, then preparing an electrode on the surface of the film by a physical sputtering method. Compared with the prior art, the preparation method has the advantages that the ferroelectric photoelectric film with high consistency and good repeatability is prepared on the FTO substrate by low cost. The prepared heterostructure film has more excellent photovoltaic performance than that of the pure BiFeO3, and can be applied in the fields of photoelectric batteries and photoelectronic devices.

A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.

The invention relates to a method for preparing a bismuth vanadate (BiVO4) solar cell on a fluorine-doped tin oxide (FTO) glass substrate. The method includes preparing precursor solution and preparing a monoclinic polycrystalline bismuth vanadate thin film. The glass substrate is utilized as a substrate, the BiVO4 oxide thin film in a perovskite structure is prepared through a chemical solution deposition method, then electrodes are prepared on the thin film through a physical sputtering method, and therefore the BiVO4 solar cell is obtained. Compared with the prior art, the method for preparing the BiVO4 solar cell on the FTO glass substrate can be used for preparing the perovskite-structure BiVO4 thin film which is high in consistency and good in repeatability at low cost. The thin film has good photovoltaic properties and the unidirectional conductive property of a diode, can meet the requirements of microelectronic devices and photoelectric devices on semiconductor materials, and has a significant promoting role in the preparation technology of bismuth vanadate thin films.

The invention relates to a preparation method of a lanthanum nickelate conductive film by chemical solution deposition, belonging to the technical field of microelectronic manufacture. The step mainly includes the preparation of LaNiO3 sol, comprising: preparing a LaNiO3 gel film on a substrate by using a dipping Czochralski method or a spin-coating method, then drying the gel film to form a LaNiO3 gel dry film; transferring the substrate coated with the LaNiO3 gel dry film to a quartz tube heating furnace, performing thermolysis in a mixed atmosphere of H2O and O2; finally putting the thermolyzed gel dry film and the substrate into a quartz tube sintering furnace, performing high temperature calcining in the mixed atmosphere of H2O and O2, so as to form the conductive film on the substrate. The conductive film formed by the method has lower resistivity.

The invention relates to a bismuth ferrite-based thin film containing doping elements. The atomic ratio of the bismuth ferrite-based thin film is represented by BiFe<1-x>A<x>O<3> (I). A preparation method comprises following steps: bismuth nitrate, ferric nitrate, and IIIA group metal elements are subjected to heating stirring, and are dissolved in acetic acid; acetylacetone is added so as to obtain a precursor solution; a base plate is coated with the precursor solution, and is subjected to heating, drying, and annealing so as to obtain the bismuth ferrite-based thin film containing doping elements. Chemical solution deposition method is adopted, the precursor solution uniformly mixed at molecular scale is obtained, and a compound with uniform composition is obtained. Introduction of IIIA group metal elements are capable of bringing relatively large lattice distortion, forming eutectic structures, and obtaining excellent ferroelectric properties, and it is promising for the bismuth ferrite-based thin film containing doping elements to be applied to novel automobile sensors.

The invention provides a gold/lead zirconate titanate/niobium-doped strontium titanate ferroelectric resistive random access memory and an adjustment and control method of the switching ratio of the ferroelectric resistive random access memory. The ferroelectric resistive random access memory is composed of an upper electrode gold material, a bottom electrode and substrate niobium-doped strontiumtitanate material and a lead zirconate titanate ferroelectric material. According to the preparation method of the memory, a lead zirconate titanate thin film is deposited on a niobium-doped strontiumtitanate substrate through using a chemical solution deposition method; gold is deposited on the lead zirconate titanate thin film by using a sputtering method, so that an upper electrode can be formed. The thickness of the lead zirconate titanate ferroelectric material ranges from 100 to 450 nm; the switching ratio of the gold/lead zirconate titanate/niobium-doped strontium titanate ferroelectric resistive random access memory can vary from 17 to 846 through adjusting and controlling the thickness of the lead zirconate titanate ferroelectric material, and is improved by 50 times. With the method adopted, the switching ratio of the ferroelectric resistive random access memory can be effectively adjusted and controlled. The method has the advantages of simplicity, high feasibility and convenience in practical application.

The invention discloses a metallic oxide resistor storage unit and a low-temperature photochemical preparation method thereof, and belongs to the technical field of novel non-volatile memory devices. The resistor storage unit is formed by a conducting bottom electrode, an InxGayZnzO membrane and a conducting top electrode. The preparation method of the storage unit comprises the step that the conducting bottom electrode and the conducting top electrode are prepared on a substrate and the InxGayZnzO membrane respectively by means of the vacuum coating technique. A chemical solution deposition method is adopted in preparation of the InxGayZnzO membrane, then a precursor membrane of the InxGayZnzO membrane is placed under an ultraviolet lamp, and photochemical processing of indoor temperature illumination is carried out on the precursor membrane. According to the metallic oxide resistor storage unit and the low-temperature photochemical preparation method, the InxGayZnzO resistor storage unit shows excellent resistance transformation characteristics under a voltage scanning mode, the metallic oxide resistor storage unit has good durability in resistance transformation characteristics and stability in voltage transformation, the excellent characteristics shown that the metallic oxide resistor storage unit and the low-temperature photochemical preparation method have potential application value in the technical field of non-volatile memory devices.

The invention discloses a coating conductor superconducting film, which consists of a YHfxBa2+xCu3Oz superconducting layer and a Y0.9Gd0.1Ba2Cu3Oy film layer which is coated on the surface of the YHfxBa2+xCu3Oz superconducting layer, wherein x is from 0.02 to 0.04. Moreover, the invention also discloses a preparation method for the superconducting film. The superconducting film disclosed by the invention has defect structures of various types; barium hafnate is introduced into a first layer; ion defects are introduced into a second layer by changing rare earth ion stoichiometric ratio; a second layer film can be induced by nano dot columnar defects of the surface of the first layer to form interface induced pinning centers, and the performance of the superconducting film is improved by the pinning centers formed by the defect structures. According to the superconducting film, a good interface is provided on the basis of the YHfxBa2+xCu3Oz superconducting layer, and thus, the homoepitaxial growth of the second layer film prepared from chemical solution deposition can be promoted to obtain the superconducting film with a biaxial structure. The thickness of the superconducting film is increased.

The invention provides a gold-lead zirconate titanate nanocomposite ferroelectric thin film material and a preparation method thereof. The thin film material has a molar composition of 0.6 to 12 mol% of Au and 88 to 99.4 mol% of Pb(Zr, Ti)O3, and the ferroelectric remanent polarization of the thin film material is 30 to 80 muC/cm<2>. The material preparation method comprises steps: according to the material molar ratio requirements, lead acetate, zirconium n-propoxide, titanium propoxide and chloroauric acid are weighed; with water, isopropanol and acetic acid as a solvent, a light yellow transparent solution is obtained after thoroughly stirring; then, the obtained solution is placed on a Pt/Ti/SiO2/Si bottom electrode material, and a chemical solution deposition method is adopted for spin coating and film forming; then, the raw material film is dried at a temperature of 120 DEG C for 10 minutes, thermal decomposition of an organic matter at a temperature of 350 DEG C for 10 minutes is carried out, the temperature rises to 600 DEG C, annealing is carried out, and after 30 minutes, air cooling is carried out; and the above process is repeated for multiple times to obtain the gold-lead zirconate titanate nanocomposite ferroelectric thin film material with a needed thickness. The thin film material has a wide application prospect in fields such as memories, super capacitors and solar photovoltaic cells.

The invention discloses a heat treatment furnace for dynamically and continuously preparing a high-temperature superconductive strip with a fluorine-free chemical solution deposition method. The continuous heat treatment furnace (9) has the structure that a hearth (12) comprises a silicon carbide pipe with a thermocouple; a high-temperature-resistant stainless steel furnace pipe (13) is installed in the hearth, and air inlets (16), (17), (18) and (19) and exhaust openings (15) and (20) are arranged on the high-temperature-resistant stainless steel furnace pipe; brackets (14) with equal distance are installed in the furnace pipe (13); a bracket (21) is installed under the furnace body; and a pulley (22) is installed under the bracket (21). The invention can simultaneously realize different heat treatment processes controlled by various atmosphere subareas and has high productivity. The equipment disclosed by the invention is used for preparing the strip on the basis of the fluorine-free chemical solution deposition method under a non-vacuum condition, has the advantages of no need of matched facilities for fluorine exhaust, low cost and simple process and is suitable for industrialized production.

The invention discloses a method for preparing a NiO/SmBiO3 composite buffer layer thin film of a high-temperature super-conduction coating conductor on a biaxially-textured NiW alloy substrate. A preparation method of a composite buffer layer comprises the following steps of: a, surface corrosion modification of a NiW alloy (200) substrate; b, oxidation heat treatment of a NiO buffer layer; c, preparation of a SmBiO3 buffer layer colloid; d, coating of a SmBiO3 buffer layer; and e, sintering and phase forming of the SmBiO3 buffer layer. According to the method, the NiO buffer layer is prepared by using an auto-oxidation extension preparation method which is low in manufacturing cost and easy in process, a high-quality NiO (200) buffer layer thin film is easy to manufacture, thickness is easy to control, and an effect of a coating conductor buffer layer can be effectively achieved. The SmBiO3 buffer layer which grows on the NiO buffer layer is prepared in air by using a chemical solution deposition method in which nitrate serves as a precursor, and the method is low in cost and applicable to large-scale deposition. A preparation process of the composite buffer layer, particularly the SmBiO3 buffer layer, breaks shackles of other foreign coating conductor composite buffer layer preparation processes and plays a positive promotion role in research and application process of the second-generation high-temperature super-conduction coating conductor of China.

The invention discloses a Sm1-xCaxBiO3 buffering layer of a high-temperature superconductivity coated conductor and a preparation method thereof. After Ca replaces Sm of a SmBiO3 buffering layer of the high-temperature superconductivity coated conductor, the element environment and lattice parameters of the SmBiO3 buffering layer are finely adjusted, accordingly the situation that lattices of the SmBiO3 buffering layer and an REBCO superconductivity layer are mismatched with each other is improved, and a series of novel Sm1-xCaxBiO3 buffering layer of the high-temperature superconductivity coated conductor is obtained, wherein the x is greater than or equal to 0.1 and less than or equal to 0.4. In addition, the buffering layer can extend and grow in the air with the temperature of 800 DEG C and is compact in structure and flat in surface, and the structural stability is kept in the follow-up preparation process of the superconductivity layer of the high-temperature superconductivity coated conductor. The method adopts a chemical solution sedimentation process using nitrate as a predecessor to perform preparation in the air and has the advantages of being low in cost, suitable for large-scale sedimentation and the like.

The invention discloses a method of preparing a lead magnesio-niobate (PMN)-lead titanate (PZT) ferroelectric film with self-polarizing effect. The method adopts the chemical solution deposition method and comprises the steps of: preparing solution consisting of lead acetate, magnesium acetate, niobium alcoholate, normal butanol titanium, ethylene glycol monomethyl ether and acetylacetone to 0.1-0.3M precursor solution; adopting the rotary filming mode to obtain a gel film and performing heat treatment in subsection in short annealing and forming film material; repeating the course until obtaining the film material with ideal thickness. The invention has the advantages of simple and convenient process operation, lower cost, and large area even film preparation. The pyroelectricity coefficient of the film obtained by the invention on LaNiO3/Pt/Ti/SiO2/Si chip can reach 1.6 multiplies by 10 <-8> Ccm <-2>K<-1> with no deflecting field applied by test.

The invention discloses a method for preparing lanthanum titanate film by sol coating method. The invention can well improve its affinity for conductive sol by pretreating the surface of the silicon substrate, so that the conductive sol is more uniform during the spraying process. are distributed on the surface of the silicon substrate, and the lanthanum titanate conductive thin film material prepared by the chemical solution deposition method in the present invention effectively improves the conductivity of the lanthanum titanate conductive thin film material, and has the advantages of simple process.

The invention discloses a Gd1-xCaxBiO3 buffering layer of a high temperature superconducting coated conductor. The buffering layer is characterized in that the Gd1-xCaxBiO3 buffering layer of the high temperature superconducting coated conductor epitaxially grows to generate an oxide Gd1-xCaxBiO3 solid solution through heat treatment after Gd in the Gd1-xCaxBiO3 buffering layer of the high temperature superconducting coated conductor is replaced with Ca, wherein x is not less than 0.1 and not more than 0.4. By using the Gd1-xCaxBiO3 buffering layer of the high temperature superconducting coated conductor disclosed by the invention, after Gd in the Gd1-xCaxBiO3 buffering layer of the high temperature superconducting coated conductor is replaced with Ca, an element environment and crystal lattice parameters of the GdBiO3 buffering layer are finely adjusted and then the lattice mismatch situation of the GdBiO3 buffering layer and a REBCO superconducting layer is adjusted; the buffering layer can epitaxially grow in the air at about 810 DEG C and has compact structure and smooth surface; and the structure of the buffering layer is kept stable in the follow-up preparing process of a superconducting layer of a high temperature superconducting coated conductor. The invention provides a preparation method of the Gd1-xCaxBiO3 buffering layer; in the method, the Gd1-xCaxBiO3 buffering layer is prepared in the air by using a chemical solution deposition method with nitrates as a precursor; therefore, the preparation method has the advantages of low cost, easiness in operation control, suitability for large-scale deposition and the like.