Method for preparing bismuth vanadate solar cell on glass substrate
A technology for solar cells and glass substrates, which is applied in the manufacture of circuits, electrical components, and final products. It can solve problems that limit the large-scale application of BVO thin films, reduce costs and environmental protection, and complicate the preparation of solid-phase methods to achieve superior photovoltaic performance. , Conducive to environmental protection, good effect of photovoltaic effect
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Embodiment 1
[0025] Bi(NO 3 ) 3 ·5H 2 O and NH 3 VO 3 (Molar ratio according to Bi:V=1:1) was dissolved in DMF with the assistance of citric acid, acetic acid and ethanolamine in proportion to obtain a dark blue and stable precursor solution. Films were then prepared by the gel-spin method. The condition of glue rejection is as follows: 10 seconds at 500 rpm and 30 seconds at 3000 rpm. After spinning the glue, dry the substrate with the precursor wet film on a hot plate at 350°C for 1 to 3 minutes, and finally dry it in O 2 Sintering at 480° C. for 5 minutes in a rapid annealing furnace under atmosphere. After the first layer is calcined, the first layer is annealed once, and then each layer is annealed once, and a total of 8 layers of glue are thrown to obtain the BVO film.
[0026] The prepared thin film was shielded by a mask with a hole of 1 mm × 0.5 mm, and a 1 mm × 0.5 mm Au upper electrode was deposited on the film surface by physical sputtering.
Embodiment 2
[0028] Bi(NO 3 ) 3 ·5H 2 O and NH 3 VO 3 (Molar ratio according to Bi:V=1:1) was dissolved in DMF with the assistance of citric acid, acetic acid and ethanolamine in proportion to obtain a dark blue and stable precursor solution. Films were then prepared by the gel-spin method. The condition of glue rejection is as follows: 10 seconds at 500 rpm and 30 seconds at 3000 rpm. After spinning the glue, dry the substrate with the precursor wet film on a hot plate at 350°C for 1 to 3 minutes, and finally dry it in O 2 Sintering at 500° C. for 5 minutes in a rapid annealing furnace under atmosphere. After calcination of the first layer of glue, anneal once, and anneal once for each layer after that, a total of 8 layers of glue are thrown, and the BVO film is obtained.
[0029] The prepared thin film was shielded by a mask with a hole of 1 mm × 0.5 mm, and a 1 mm × 0.5 mm Au upper electrode was deposited on the film surface by physical sputtering.
Embodiment 3
[0031] Bi(NO 3 ) 3 ·5H 2 O and NH 3 VO 3 (Molar ratio according to Bi:V=1:1) was dissolved in DMF in proportion and with the assistance of citric acid, acetic acid and ethanolamine to obtain a dark blue and stable precursor solution. Films were then prepared by the gel-spin method. The condition of glue rejection is as follows: 10 seconds at 500 rpm and 30 seconds at 3000 rpm. After spinning the glue, dry the substrate with the precursor wet film on a hot plate at 350°C for 1 to 3 minutes, and finally dry it in O 2 Sintering at 520° C. for 5 minutes in a rapid annealing furnace under atmosphere. After calcination of the first layer of glue, anneal once, and anneal once for each layer after that, a total of 8 layers of glue are thrown, and the BVO film is obtained. The prepared thin film was shielded by a mask with a hole of 1 mm × 0.5 mm, and a 1 mm × 0.5 mm Au upper electrode was deposited on the film surface by physical sputtering.
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