1283results about "Renewable energy products" patented technology

A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. Such a semiconductor may comprise an interior core comprising a first semiconductor; and an exterior shell comprising a different material than the first semiconductor. Such a semiconductor may be elongated and my have, at any point along a longitudinal section of such a semiconductor, a ratio of the length of the section to a longest width is greater than 4:1, or greater than 10:1, or greater than 100:1, or even greater than 1000:1. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be a single crystal and may be free-standing. Such a semiconductor may be either lightly n-doped, heavily n-doped, lightly p-doped or heavily p-doped. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor. Two or more of such a semiconductors, including an array of such semiconductors, may be combined to form devices, for example, to form a crossed p-n junction of a device. Such devices at certain sizes may exhibit quantum confinement and other quantum phenomena, and the wavelength of light emitted from one or more of such semiconductors may be controlled by selecting a width of such semiconductors. Such semiconductors and device made therefrom may be used for a variety of applications.

Embodiments include apparatus and methods of fluid energy conversion. One embodiment relates to a tube for a fluid energy converter. The tube may include a generally cylindrical and hollow body having an interior surface, an exterior surface, and a longitudinal axis. Another embodiment includes a fluid energy converter having a longitudinal axis and a rotatable tube coaxial about the longitudinal axis. In some embodiments, the rotatable tube converts kinetic energy in a fluid into rotating mechanical energy, or converts rotating mechanical energy into kinetic energy in a fluid.

Organic electronic packages having sealed edges. More specifically, packages having organic electronic devices are provided. A number of sealing mechanisms are provided to hermetically seal the edges of the package to completely protect the organic electronic device from external elements. A sealant may be implemented to completely surround the organic electronic device. Alternatively, edge wraps may be provided to completely surround the organic electronic device.

A design and manufacturing method for a photovoltaic (PV) solar cell less than 100 μm thick are disclosed. A porous silicon layer is formed on a wafer substrate. Portions of the PV cell are then formed using diffusion, epitaxy and autodoping from the substrate. All front side processing of the solar cell (junctions, passivation layer, anti-reflective coating, contacts to the N⁺-type layer) is performed while the thin epitaxial layer is attached to the porous layer and substrate. The wafer is then clamped and exfoliated. The back side of the PV cell is completed from the region of the wafer near the exfoliation fracture layer, with subsequent removal of the porous layer, passivation, patterning of contacts, deposition of a conductive coating, and contacts to the P⁺-type layer. During manufacturing, the cell is always supported by either the bulk wafer or a wafer chuck, with no processing of bare thin PV cell

The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.

A method of making a thin-film device including a substrate-supply station that supplies a substrate. The substrate has a first layer on the substrate. Also described is a method and device for depositing a second layer onto the first layer, wherein energy supplied to the second layer aids in layer formation without substantially heating the substrate. Some embodiments include depositing a photovoltaic cell. In some embodiments, the substrate is a flexible material supplied from a roll. Some embodiments include attaching an integrated circuit to the substrate and operatively coupling the integrated circuit to charge the battery from the photovoltaic cell.

A continuous deposition process and apparatus for depositing semiconductor layers containing cadmium, tellurium or sulfur as a principal constituent on transparent substrates to form photovoltaic devices as the substrates are continuously conveyed through the deposition apparatus is described. The film deposition process for a photovoltaic device having an n-type window layer and three p-type absorber layers in contiguous contact is carried out by a modular continuous deposition apparatus which has a plurality of processing stations connected in series for depositing successive layers of semiconductor films onto continuously conveying substrates. The fabrication starts by providing an optically transparent substrate coated with a transparent conductive oxide layer, onto which an n-type window layer formed of CdS or CdZnS is sputter deposited. After the window layer is deposited, a first absorber layer is deposited thereon by sputter deposition. Thereafter, a second absorber layer formed of CdTe is deposited onto the first absorber layer by a novel vapor deposition process in which the CdTe film forming vapor is generated by sublimation of a CdTe source material. After the second absorber layer is deposited, a third absorber layer formed of CdHgTe is deposited thereon by sputter deposition. The substrates are continuously conveyed through the modular continuous deposition apparatus as successive layers of semiconductor films are deposited thereon.

A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-band.

Methods for manufacturing three-dimensional thin-film solar cells using a template. The template comprises a template substrate comprising a plurality of three-dimensional surface features. The three-dimensional thin-film solar cell substrate is formed by forming a sacrificial layer on the template, subsequently depositing a semiconductor layer, selectively etching the sacrificial layer, and releasing the semiconductor layer from the template. Select portions of the three-dimensional thin-film solar cell substrate are then doped with a first dopant, while other select portions are doped with a second dopant. Next, selective emitter and base metallization regions are formed using a PECVD shadow mask process.

The method for making a continuous laminate, in particular suitable as a spar cap or another part of a wind energy turbine rotor blade comprises the steps of providing a plurality of parallel fibers, embedding the fibers in a curable matrix material, curing the matrix material so as to obtain a fiber reinforced laminate having upper and lower major surfaces, and forming channels into at least one of the upper and lower major surfaces of the laminate wherein the channels on the upper and/or lower major surfaces are angled with respect to the direction of the fibers.

An optoelectronic device comprising a mesa structure including:

• • a first and a second semiconductor portions forming a p-n junction,
  • a first electrode electrically connected to the first portion which is arranged between the second portion and the first electrode,
  • the device further comprising:
  • a second electrode electrically connected to the second portion,
  • an element able to ionize dopants of the first and/or second semiconductor portion through generating an electric field in the first and/or second semiconductor portion and overlaying at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of a space charge zone formed by the first and second semiconductor portions,
  • upper faces of the first electrode and of the second electrode form a substantially planar continuous surface.

The invention relates to a structural mat for reinforcing a wind turbine blade structure. The structural mat comprises two or more groups of bonded fibres, the fibres being bonded by a matrix substantially preventing relative movement of said fibres and wherein said groups are connected to each other by connection means limiting the relative movement of said groups. The invention further relates to a wind turbine blade and a method for manufacturing a wind turbine blade.

Acene-based compounds that can be used to prepare n-type semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including n-type semiconductor materials prepared from these compounds also are provided.