103results about How to "High yield preparation" patented technology

The present invention features inter alia polypeptides comprising an Fc region comprising genetically-fused Fc moieties. In addition, the instant invention provides, e.g., methods for treating or preventing a disease or disorder in subject by administering the binding polypeptides of the invention to said subject.

In a method for manufacturing a semiconductor device, a semiconductor film formed over an insulator is doped with an impurity element to a depth less than the thickness of the semiconductor film, thereby forming an impurity doped layer; a metal silicide layer is formed on the impurity doped layer; the metal silicide layer and the semiconductor film are etched to form a recessed portion; and a layer which is not doped with the impurity element and is located at the bottom of the recessed portion of the semiconductor film is thinned to make a channel formation region. Further, a gate electrode is formed in the recessed portion over the thinned non impurity doped layer, with an insulating film interposed therebetween.

The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

A flexible display of the present invention is an active matrix flexible display in which a TFT is provided for each pixel. In the flexible display, an adhesive layer, a protective layer, a gate electrode for the TFT, which is buried in the protective layer, a gate insulating layer for the TFT, source and drain electrodes for the TFT, a pixel electrode electrically connected to the drain electrode, an organic active layer for the TFT, an organic EL layer including a red (R) emitting layer, a green (G) emitting layer and a blue (B) emitting layer, which are formed on a plurality of the pixel electrodes, a metal electrode, and a sealing layer are formed on a plastic film.

A flexible micro-electromechanical switch having a cantilevered platform for forming an electrical circuit. A latching mechanism maintains the platform in a biased position after the biasing voltage is removed. The flexible micro-electromechanical switch can be formed into large area arrays and used as the backplane of display devices.

An optical element mounting substrate where a plurality of light emitting elements have been mounted on the same plane, a lens array for collimating a plurality of light emitted from the plurality of light emitting elements, and a wavelength multiplexing / demultiplexing device are prepared. The wavelength multiplexing / demultiplexing device has typically mounted both a wavelength selecting filter and a mirror on front and rear planes of a transparent substrate. These three components are mounted within a package at a desirable angle position. Optical axes of respective wavelengths of the wavelength multiplexing / demultiplexing device are determined based upon a thickness and an angle of the light emitting element mounting substrate, and are arrayed on a straight line of a horizontal plane. As a consequence, if the respective light emitting elements are arranged on the optical axes which are exclusively determined by a design work, then optical multiplexing / demultiplexing operations can be carried out.

The present invention features inter alia polypeptides comprising an Fc region comprising genetically-fused Fc moieties. In addition, the instant invention provides, e.g., methods for treating or preventing a disease or disorder in subject by administering the binding polypeptides of the invention to said subject.

An electrode-membrane-frame assembly for a polyelectrolyte fuel cell which is held between one pair of separators and constitutes an electric cell module in the fuel cell is constituted of a membrane electrode assembly, a first frame body which has a separator-side surface on which a sealing member for sealing between the member and one separator and a membrane-side surface located on one surface of the peripheral edge portion of the membrane electrode assembly and is formed of a thermoplastic resin material, and a second frame body that has a separator-side surface on which a sealing member for sealing between the member and the other separator and a membrane-side surface located on the other surface of the peripheral edge portion of the membrane electrode assembly and is formed of a thermoplastic resin material and fitted to the first frame body holding the peripheral edge portion of the membrane electrode assembly between the second frame body and the first frame body.

The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

A thin film transistor includes a semiconductor layer formed over a substrate, and an electrode member formed over the substrate by a liquid phase method. The electrode member includes a base layer composed of a metal material and an outer surface layer deposited on at least one surface of the base layer. The outer surface layer is formed of a metal material that is less susceptible to being dissolved in silicon and a silicon compound compared with the metal material constituting the base layer.

In accordance with the teachings described herein, a method for fabricating a patterned polysilicon layer having a planar surface may include the steps of: depositing a polysilicon film above a substrate material; depositing an oxide-resistant mask over the polysilicon film; patterning and etching the oxide-resistant mask to form a patterned mask layer over the polysilicon film, such that the polysilicon film includes masked and unmasked portions; etching the unmasked portions of the polysilicon film for a first amount of time; oxidizing the etched polysilicon film for a second amount of time to form an oxide layer that defines the patterned polysilicon layer; and removing the patterned mask layer; wherein the first and second amounts of time are selected such that the oxide layer and the patterned polysilicon layer have about the same thickness and form a planar surface.

A radiation detecting apparatus having a radiation conversion element arranged on a switch TFT is provided. The apparatus includes a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are arranged on the gate electrode in order; and a source / drain electrode of the switch TFT arranged on the ohmic contact layer, which all constitute the switch TFT. The apparatus also includes a lower electrode of the radiation conversion element formed from the same layer as the source / drain electrode, a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are arranged on the lower electrode in order, and a bias wiring for applying a bias voltage to the radiation conversion element.

A honeycomb structure 10 of the present invention is provided with porous partition walls 12 made of a ceramic material containing cordierite as a main crystal phase and separating and forming a plurality of cells 14 functioning as fluid passages. The partition walls 12 contain sodium at 0.08 to 0.15 mass % in terms of sodium oxide. A honeycomb structure having a large average pore size can be provided.

A multilayer composite including a core made of a magnetic ceramic sintered compact disposed therein, and shrinkage restraining layers including an inorganic powder that is not substantially sintered at the sintering temperature of the green ceramic layers are sintered in order to reduce the difference in shrinkage behavior during firing between the core and the green ceramic layers.

A polymer composite piezoelectric body is obtained by conducting polarization treatment on a composite having piezoelectric particles uniformly mixed by dispersion in a polymer matrix containing cyanoethylated polyvinyl alcohol.

The present invention provides a radiation detecting apparatus having a radiation conversion element laminated on a switch TFT, including a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are laminated on the gate electrode in order; and a source / drain electrode of the switch TFT laminated on the ohmic contact layer, which all constitute the switch TFT; and a lower electrode of the radiation conversion element, which is formed on the same layer as the source / drain electrode; a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are laminated on the lower electrode in order; and a bias wiring for applying a bias to the radiation conversion element. Also, the invention provides a radiation image pickup apparatus including a photoelectric conversion element having a wavelength converter for converting a radiation into a visible light, a pixel electrode for converting the visible light into an electric signal, an insulating layer, and a semiconductor layer; and a transistor for controlling reading of the electric signal converted by the photoelectric conversion element, the photoelectric conversion element being laminated on the wavelength converter side of the transistor, the pixel electrode being divided for each of plural pixels, and the semiconductor layer extending over the plural pixels.

A lower magnetic pole layer and / or an upper magnetic pole layer are formed of a CoFeα alloy in which the component ratio X of Co is 8 to 48 mass %, the component ratio Y of Fe is 50 to 90 mass %, the component ratio Z of the element α (the element α is at least one of Ni and Cr) is 2 to 20 mass %, and the equation X+Y+Z=100 mass % is satisfied. Consequently, the saturated magnetic flux density can be 2.0 T or more, and a thin-film magnetic head have a higher recording density can be manufactured

The present invention relates to the production and use of covalently closed circular (ccc) recombinant DNA molecules such as plasmids, cosmids, bacterial artificial chromosomes (BACs), bacteriophages, viral vectors and hybrids thereof, and more particularly to vector modifications that improve expression of said DNA molecules.

The present invention provides a radiation detecting apparatus having a radiation conversion element laminated on a switch TFT, including: a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are laminated on the gate electrode in order; and a source / drain electrode of the switch TFT laminated on the ohmic contact layer, which all constitute the switch TFT; and a lower electrode of the radiation conversion element, which is formed on the same layer as the source / drain electrode; a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are laminated on the lower electrode in order; and a bias wiring for applying a bias to the radiation conversion element. Also, the invention provides a radiation image pickup apparatus including: a photoelectric conversion element having a wavelength converter for converting a radiation into a visible light, a pixel electrode for converting the visible light into an electric signal, an insulating layer, and a semiconductor layer; and a transistor for controlling reading of the electric signal converted by the photoelectric conversion element, the photoelectric conversion element being laminated on the wavelength converter side of the transistor, the pixel electrode being divided for each of plural pixels, and the semiconductor layer extending over the plural pixels.

A method of manufacturing an LED according to an embodiment of the present invention includes back-grinding a substrate of an LED wafer including a light emitting element and the substrate, where the back-grinding includes fixing the LED wafer to a table via a double-sided pressure-sensitive adhesive sheet, and then grinding the substrate.

Disclosed is a method for stably producing an isocyanate with high yield for a long time without using phosgene. This method for producing an isocyanate does not cause the problems involved in the prior art. Specifically disclosed is a method for producing an isocyanate, which comprises a step wherein a carbamic acid ester is reacted with an aromatic hydroxy compound, thereby obtaining an aryl carbamate having a group derived from the aromatic hydroxy compound, and a step wherein the aryl carbamate is subjected to a decomposition reaction. This method for producing an isocyanate is characterized in that the aromatic hydroxy compound is an aromatic hydroxy compound represented by the formula (1) below, which has a substituent R<1> at at least one ortho-position of the hydroxyl group. In the formula, ring A represents an optionally substituted monocyclic or heterocyclic aromatic hydrocarbon ring having 6-20 carbon atoms; R<1> represents a group other than a hydrogen atom, which is an aliphatic alkyl group having 1-20 carbon atoms, an aliphatic alkoxy group having 1-20 carbon atoms, an aryl group having 6-20 carbon atoms, an aryloxy group having 6-20 carbon atoms, an aralkyl group having 7-20 carbon atoms or an aralkyloxy group having 7-20 carbon atoms, each containing an atom selected from a carbon atom, an oxygen atom and a nitrogen atom; and R<1> and A may combine together to form a ring structure.

The present invention relates to a spark plug having good combustible-gas ignitability even when the spark plug is downsized and to a method for high-yield manufacturing of a spark plug with good combustible-gas ignitability. There is provided according to one aspect of the present invention a spark plug 1 having a center electrode 2, an insulator 3 and a metal shell 4 and satisfying the following conditions (1) to (5). There is provided according to another aspect of the present invention a manufacturing method of a spark plug including the step of producing an insulator by preparing a raw material powder in such a manner that the particle size distribution ratio (90% volume diameter / 10% volume diameter) between particles of 10% volume diameter and particles of 90% volume diameter in the raw material powder is 3.6 to 5.2, and then, press-forming and sintering the prepared raw material powder.Condition (1): The insulator has a wall thickness T of 0.3 to 1.1 mm at an imaginary plane including a front end face of the metal shell.Condition (2): A region of the insulator extending from a front end of the insulator to at least 2 mm rear from the imaginary plane is formed of an alumina-based sintered body containing a Si component, a rare earth element component and at least two kinds of Group 2 element components and being substantially free from a B component.Condition (3): The mass ratio RRE of a mass of the rare earth element component to a total mass of the Si component, the Group 2 element components and the rare earth element component in the alumina-based sintered body is 0.15 to 0.45.Condition (4): The mass ratio R2 of a total mass of the components of the Group 2 elements to a mass of the Si component in the alumina-based sintered body is 0.25 or greater.Condition (5): The alumina-based sintered body includes, in a grain boundary phase thereof, an aluminate crystal containing the rare earth element component.