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Bismuth ferrite-based thin film containing doping elements, and preparation method thereof

A bismuth ferrite-based, doped element technology, applied in coatings and other directions, can solve the problems of poor performance and complex manufacturing process of piezoelectric ceramics, and achieve the effect of beneficial ferroelectric properties and large lattice distortion

Active Publication Date: 2016-03-16
BAIC MOTOR CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

The technical effect of this patented material is that it contains different types of dopants like iron oxide or germanium instead of pure tin dioxide. This results in better performance compared to previous materials due to improved crystal quality caused by increased lattical distortions during formation process. Additionally, adding certain metals also enhances its ability to generate electricity when exposed to mechanical stress such as vibration.

Problems solved by technology

This patented technical problem addressed by this patents relates to finding alternative materials that can be replaced due to their high efficiency compared to traditional lead based compositions while also being less likely causing environmental concerns during production processes.

Method used

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  • Bismuth ferrite-based thin film containing doping elements, and preparation method thereof
  • Bismuth ferrite-based thin film containing doping elements, and preparation method thereof
  • Bismuth ferrite-based thin film containing doping elements, and preparation method thereof

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[0038] The invention also discloses a preparation method of a bismuth ferrite-based thin film containing doping elements, comprising the following steps:

[0039] Step 1: heating and stirring bismuth nitrate, iron nitrate and nitrates of Group IIIA metal elements, dissolving them in acetic acid, and then adding acetylacetone to obtain a precursor solution;

[0040] The molar ratio of the iron ion and the metal element of group IIIA is (1-x):x;

[0041] The ratio of the molar weight of described bismuth ion to the total molar weight of iron ion and gallium ion is 1:1;

[0042] Step 2: coating the precursor solution on the substrate, heating and drying, and annealing to obtain a bismuth ferrite-based thin film containing doping elements having an atomic ratio as shown in formula I;

[0043] BiFe 1-x A x o 3 (I);

[0044] Wherein, A is a metal element of group IIIA; x is 0.1-0.3.

[0045] According to the present invention, at first bismuth nitrate, ferric nitrate and the n...

Embodiment 1

[0058] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O, 99.5%), iron nitrate nonahydrate (Fe(NO 3 ) 3 9H 2 O, 99.5%) and gallium nitrate octahydrate (Ga(NO 3 ) 3 ·8H 2 O, 99.5%). The molar ratio of Bi, Fe and Ga is 1:0.9:0.1. Under heating and stirring, dissolve in acetic acid (C 2 h 4 o 2 , 99.7%). Add acetylacetone (C 5 h 8 o 2 , 99%) to form a precursor solution, the metal ion concentration of the precursor solution is 0.2mol / L.

[0059] The precursor solution was coated onto the glass substrate by spin-coating method. On the 180°C and 380°C heating plates, hold for 180s each to evaporate the solvent and pyrolyze the organics. To achieve the desired film thickness (approximately 200 nm), the spin-coating and heating process was repeated 5 times. Afterwards, it was annealed at 500°C for 5 hours in an annealing furnace to obtain a crystalline thin film BiFe 0.9 Ga 0.1 o 3 .

Embodiment 2

[0061] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 O, 99.5%), iron nitrate nonahydrate (Fe(NO 3 ) 3 9H 2 O, 99.5%) and gallium nitrate octahydrate (Ga(NO 3 ) 3 ·8H 2 O, 99.5%). The molar ratio of Bi, Fe and Ga is 1:0.8:0.2. Under heating and stirring, dissolve in acetic acid (C 2 h 4 o 2 , 99.7%). Add acetylacetone (C 5 h 8 o 2 , 99%) to form a precursor solution, the metal ion concentration of the precursor solution is 0.2mol / L.

[0062] The precursor solution was coated onto the glass substrate by spin-coating method. On the heating plate at 190°C and 400°C, hold for 180s each to evaporate the solvent and pyrolyze the organic matter. To achieve the desired film thickness (approximately 200 nm), the spin-coating and heating process was repeated 4 times. Afterwards, it was annealed at 510°C for 5 hours in an annealing furnace to obtain a crystalline thin film BiFe 0.8 Ga 0.2 o 3 .

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Abstract

The invention relates to a bismuth ferrite-based thin film containing doping elements. The atomic ratio of the bismuth ferrite-based thin film is represented by BiFe<1-x>A<x>O<3> (I). A preparation method comprises following steps: bismuth nitrate, ferric nitrate, and IIIA group metal elements are subjected to heating stirring, and are dissolved in acetic acid; acetylacetone is added so as to obtain a precursor solution; a base plate is coated with the precursor solution, and is subjected to heating, drying, and annealing so as to obtain the bismuth ferrite-based thin film containing doping elements. Chemical solution deposition method is adopted, the precursor solution uniformly mixed at molecular scale is obtained, and a compound with uniform composition is obtained. Introduction of IIIA group metal elements are capable of bringing relatively large lattice distortion, forming eutectic structures, and obtaining excellent ferroelectric properties, and it is promising for the bismuth ferrite-based thin film containing doping elements to be applied to novel automobile sensors.

Description

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Claims

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Application Information

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Owner BAIC MOTOR CORP LTD
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