Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film

A technology of solar cells and heterogeneous structures, applied in the manufacture of circuits, electrical components, and final products, to achieve superior photovoltaic performance, simple preparation methods, and good repeatability

Inactive Publication Date: 2013-05-01
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] So far, there is no method for preparing BFO / NBT-BT heterostructure ferroelectric thin films and their photovoltaic cells on conductive glass substrates

Method used

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  • Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film
  • Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film
  • Preparation method of solar battery with bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film

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Experimental program
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Effect test

Embodiment 1

[0035] (1) Preparation of BFO precursor solution and NBT-BT precursor solution

[0036] BFO precursor solution preparation: Bi(NO 3 ) 3 ·5H 2 O and Fe(NO3 ) 3 9H 2 O is completely dissolved in ethylene glycol methyl ether at a molar ratio of 1:1 to obtain a reddish-brown clear and stable BFO precursor solution;

[0037] Preparation of NBT-BT precursor solution: using ethylene glycol methyl ether as solvent, Ti[OCH(CH 3 ) 2 ] 4 , Bi(NO 3 ) 3 ·5H 2 O, Ba(CH 3 COO) 2 and NaNO 3 As the solute, prepare the NBT-BT precursor solution in atomic proportion; dissolve Ti[OCH(CH 3 ) 2 ] 4 Mix it with acetylacetone evenly; after the above solutes are dissolved, add ethanolamine and 1 / 4 of the volume of the prepared solution under heating conditions at 70°C to obtain a stable NBT-BT precursor solution;

[0038] (2) Preparation of BFO / NBT-BT heterostructure ferroelectric thin film

[0039] Then thin films were prepared on the FTO substrate by the glue-spin method. The condi...

Embodiment 2

[0043] Prepare the required NBT-BT and BFO precursor solutions according to the aforementioned precursor solution preparation method. Then thin films were prepared on the FTO substrate by the glue-spin method. The condition of glue rejection is as follows: 10 seconds at 1000 rpm and 30 seconds at 3000 rpm. After spinning the glue, the substrate with the precursor wet film was first dried on a hot plate at 200°C for 3 minutes, then calcined at 350°C for 5 minutes, and finally in O 2 Sintering in a rapid annealing furnace under atmosphere for 5 minutes, wherein the annealing temperature of NBT-BT is 600°C, and the annealing temperature of BFO is 550°C. Two layers of NBT-BT films were deposited on the FTO substrate first, and then eight layers of BFO films were deposited on the NBT-BT films to obtain 2NBT-BT / 8BFO heterostructure ferroelectric films.

[0044] The prepared thin film was shielded by a mask with a hole of 0.5mm*1mm, and an Au upper electrode of 0.5mm*1mm was deposi...

Embodiment 3

[0046] Prepare the required NBT-BT and BFO precursor solutions according to the aforementioned precursor solution preparation method. Then thin films were prepared on the FTO substrate by the glue-spin method. The condition of glue rejection is as follows: 10 seconds at 1000 rpm and 30 seconds at 3000 rpm. After spinning the glue, the substrate with the precursor wet film was first dried on a hot plate at 200°C for 3 minutes, then calcined at 350°C for 5 minutes, and finally in O 2 Sintering in a rapid annealing furnace under atmosphere for 5 minutes, wherein the annealing temperature of NBT-BT is 600°C, and the annealing temperature of BFO is 550°C. First, 3 layers of NBT-BT films were deposited on the FTO substrate, and then 7 layers of BFO films were deposited on the NBT-BT films to obtain 3NBT-BT / 7BFO heterostructure ferroelectric films.

[0047] The prepared thin film was shielded by a mask with a hole of 0.5mm*1mm, and an Au upper electrode of 0.5mm*1mm was deposited o...

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Abstract

The invention relates to a preparation method of a solar battery with a bismuth ferrite/sodium bismuth titanate-barium titanate heterostructure ferroelectric film. The preparation method comprises the following steps of: selecting SnO2 transparent conducting glass doped with fluorine (FTO for short) as a substrate, preparing the (Na0.5Bi0.5)0.94Ba0.06TiO3 and BiFeO3 ferroelectric film by a chemical solution deposition method, then preparing an electrode on the surface of the film by a physical sputtering method. Compared with the prior art, the preparation method has the advantages that the ferroelectric photoelectric film with high consistency and good repeatability is prepared on the FTO substrate by low cost. The prepared heterostructure film has more excellent photovoltaic performance than that of the pure BiFeO3, and can be applied in the fields of photoelectric batteries and photoelectronic devices.

Description

technical field [0001] The invention belongs to the technical field of thin film deposition and photovoltaic cell preparation, in particular to a preparation of BiFeO on a fluorine-doped SnO2 transparent conductive glass (FTO) substrate 3 / (Na 0.5 Bi 0.5 ) 0.94 Ba 0.06 TiO 3 (BFO / NBT-BT) method for heterostructure ferroelectric thin film photovoltaic cells. Background technique [0002] Photovoltaic power generation is an effective way to utilize solar energy and an important part of renewable energy utilization. It is also the fastest growing, most dynamic, and most attention-grabbing research field in recent years. At present, the proportion of photovoltaic power generation in the entire energy structure is still very small (less than 1%), and the main reason is that the cost is too high. According to statistics, 65% of the cost of traditional crystalline silicon battery components comes from silicon wafers, which consumes a lot of silicon resources, and the supply o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20
CPCY02P70/521Y02P70/50
Inventor 郭益平郭兵刘河洲李华陶文燕康红梅
Owner SHANGHAI JIAO TONG UNIV
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