37results about How to "Extended annealing time" patented technology

The invention relates to intelligent heat-color light-dimming energy-saving glass. The intelligent heat-color light-dimming energy-saving glass is characterized by comprising a first glass layer, a frame and a glass complex which are adhered in sequence, wherein the first glass layer is boned with the glass complex through the frame to form a hollow glass structure. The glass complex is selected from single-layer glass or interlayer glass structures. The glass complex comprises an intelligent heat-color film layer having a phase-change function. The intelligent heat-color light-dimming energy-saving glass achieves heat adjustment with environment temperature change and can be widely applied to the field of building energy-saving door windows and vehicle and ship windows. By the adoption of the structure, impact resistance and other safety properties of the glass can be improved, the service life of a vanadium oxide composite film layer can be prolonged, and the demands for different environmental glass strength can be met by selecting multiple substrate materials.

The invention provides a quasi molecule laser annealing apparatus and a preparation method of a low-temperature polysilicon thin film, for solving the problems of short effective annealing time and quite small crystal grains during annealing of a conventional low-temperature polysilicon thin film in the prior art. In the quasi molecule laser annealing apparatus, a heating unit is arranged at one side, which is far away from an amorphous silicon thin film, at a substrate to be processed, for heating the substrate to the processed. The heating unit heats the substrate during the annealing process of the substrate to be processed, such that the temperature difference between the substrate to the processed and the amorphous silicon thin film is reduced, heat generated when laser is irradiated on the amorphous silicon thin film is not rapidly conducted to the substrate, the temperature reduction speed of the amorphous silicon thin film is slowed down, the annealing time is prolonged, and fused amorphous silicon can be conveniently annealed to form the large-crystal-grain polysilicon thin film. Since the preparation method of the low-temperature polysilicon thin film employs the quasi molecule laser annealing apparatus, the large-crystal-grain polysilicon thin film can be obtained, and a polysilicon thin film transistor with higher mobility can be obtained.

The invention relates to a method for preparing a polycrystalline silicon thin film, in particular to a method for inducing an amorphous silicon thin film with tin to be crystallized into a polycrystalline silicon thin film at a low temperature. according to the main technical scheme of the invention, the method comprises the following steps of: 1, carrying out ultrasonic cleaning on a glass substrate by using acetone and deionized water respectively to clean the glass substrate; 2, growing a layer of amorphous silicon (a-Si:H) thin film on the glass substrate by using a plasma enhanced chemical vapor deposition method (PECVD), wherein the temperature of the substrate is about 200 DEG C, and the thickness of the thin film is 200nm-300nm during deposition; 3, growing a layer of metal tin (Sn) thin film with the thickness of 10nm-20nm on the amorphous silicon thin film by using a physical vapor deposition method so as to obtain a substrate/(a-Si:H)/Sn structure; 4, arranging the substrate/(a-Si:H)/Sn in a heat treatment furnace in a laminated manner, and carrying out heat treatment for more than 1 hour at the temperature of 450 DEG C, then cooling naturally, where nitrogen (N2) is introduced and used as a protection gas during the whole annealing process; and 5, removing the remained metal tin on the surface with concentrated hydrochloric acid with the concentration of 37.5% to finally obtain the polycrystalline silicon thin film which is crystallized under the induction of tin, wherein the particle size is about 70-200nm. The method is applicable to the fields of thin-film field effect transistors and solar cells.

The invention discloses a composite aluminum alloy foil used for a radiator and a production process thereof. The composite aluminum alloy foil comprises an A3003 core material and an A4045 coating layer, wherein the A3003 core material and the A4045 coating layer are composited by adopting a double-sided coating method. According to the composite aluminum alloy foil used for the radiator and theproduction process thereof: during cold-rolling bonding, the skin material A4045 and the core material A3003 are initially bonded firmly according to the first-pass reduction rate of 30%-50%; comparedwith the hot-rolling composite foil, the cold-rolling composite foil has the advantages as follows: the transversal thickness of the coating layer is more uniform, and the thicknesses of the upper and lower coating layers tends to be the same; when the precision rolling reduction rate is 25%-35%, the sagging resistance ability of the composite foil is the best; besides, the annealing temperatureof the composite foil before finished product is controlled to be 320-400 DEG C, the sagging resistance ability of the composite foil is improved when the annealing is performed at 400 DEG C and the annealing time is prolonged, and the sagging resistance ability is poorer when the annealing time exceeds 80 min.

The invention discloses double-sided dark battery foil and a preparation method thereof. The double-sided dark battery foil is prepared from the following component raw materials: Si, Fe, Cu, Mn, Mg,Ti and Al. The preparation method of the double-sided dark battery foil comprises the following steps: (1) the raw materials are added into a smelting furnace to be smelted, and molten liquid is obtained; (2) the molten liquid is input into a cast-rolling machine to be cast-rolled into a blank; (3) the cast-rolled blank is cold-rolled by a cold-rolling machine, and homogenizing annealing treatmentis conducted; and (4) after an aluminum coil subjected to homogenizing annealing is cooled to the room temperature, cold rolling in passes is conducted; (5) rerolling and edge cutting are conducted;(6) intermediate annealing treatment is conducted; (7) the aluminum coil subjected to intermediate annealing treatment is cold-rolled; and (8) the cold-rolled aluminum coil is rerolled, then foil rolling is conducted, and thus the double-sided dark battery foil is prepared. Aluminum powder on the dark side of the double-sided dark battery foil produced by the invention is effectively controlled,corrugated edges are avoided, the using performance and surface quality of a finished product are high, and the double-sided dark battery foil can be applied to most batteries.

The invention provides a preparation method of a Pd-In-Fe elastic-thermal refrigerating material with linear superelasticity. The method comprises the following steps: smelting an alloy raw material to form alloy ingots, and obtaining a Pd-In-Fe elastic-thermal refrigerating material by adopting molten glass and a circular overheat treatment deep supercooling technology. A superelasticity curve ofthe obtained Pd-In-Fe elastic-thermal refrigerating material has linear characteristics; and moreover, by virtue of multiple circulations, the shape of the curve is unchanged, the superelasticity isstable, and the obtained Pd-In-Fe elastic-thermal refrigerating material has a potential application prospect in the field of elastic-thermal refrigeration.

The invention discloses a method for preparing lanthanum titanate film by sol coating method. The invention can well improve its affinity for conductive sol by pretreating the surface of the silicon substrate, so that the conductive sol is more uniform during the spraying process. are distributed on the surface of the silicon substrate, and the lanthanum titanate conductive thin film material prepared by the chemical solution deposition method in the present invention effectively improves the conductivity of the lanthanum titanate conductive thin film material, and has the advantages of simple process.

The invention discloses a PCR rapid detection method for marine culturable bacteria, and a kit, belonging to the technical field of microorganism detection. The kit comprises a DNA extraction reagent,a PCR reaction reagent and an electrophoretic reagent. Among them, DNA extraction reagent is Chelex- 100; The PCR reaction reagents included two universal 16S rRNA primers (27F and 1492R) and 2 x TaqPCR Mastermix solution. Electrophoretic reagents included agarose, 50 x TBE, Goldview II nucleic acid dye, DNA Marker. The kit can be used for DNA amplification of marine culturable bacteria in a short time, and has the advantages of simple procedure, safety, economy, high efficiency and small bacterial requirement.

The invention relates to a method for growing a CdS film or CdS nano-structure on a CdTe film. The method comprises the following steps of 1) filling the CdTe film into a quartz tube, and then placing the quartz tube into a sintering furnace to eliminate superfluous gas inside the quartz tube; 2) inletting mixed gas containing hydrogen sulfide, increasing the temperature of the sintering furnace to anneal the CdTe film; 3) performing cooling after the annealing step, discharging the film to obtain a finished product. According to the method for growing the CdS film or CdS nano-structure on the CdTe film, the CdTe film is placed inside the sintering furnace, the sintering furnace is filled with the hydrogen sulfide, then the temperature of the sintering furnace is increased, and lastly, the CdS film or CdS nano-structure can be formed in situ on the surface of the CdTe film. The method for growing the CdS film or CdS nano-structure on the CdTe film has the advantages of being simple in equipment and low in cost, and during a growing process, being low in temperature, saving catalyst and formworks and the like, and meanwhile, is a novel heterojunction preparing method and can be applied to preparation of heterostructural photovoltaic batteries such as CIGS, CZTS and CdTe.

The invention relates to a wire drawing device and method for a large-core-diameter single-polarization optical fiber. The equipment is characterized by comprising wire drawing furnace low-temperatureareas, wire drawing furnace high-temperature areas and an annealing pipe, wherein the wire drawing furnace low-temperature areas and the wire drawing furnace high-temperature areas are alternately and sequentially arranged to form a heating furnace area, the center lines of the two wire drawing furnace high-temperature areas are perpendicular to the center connecting line of stress elements of the optical fiber, the center lines of the two wire drawing furnace low-temperature areas are consistent with the center connecting line of the stress elements, and the annealing pipe is placed under the center line of the furnace area. The method is characterized by comprising the following steps: 1, clamping a preform in the wire drawing furnace; 2, heating the wire drawing furnace; 3, loading thepreform on a disc, and setting the temperature of the annealing pipe; 4, subjecting the preform to vacuumizing treatment; step 5, carrying out wire drawing; and 6, cutting off the optical fiber. Non-uniform internal stress generated in the wire drawing process of the large-core-diameter single-polarization optical fiber can be eliminated, so the optical fiber has the characteristic of complete welding after being cut, and the usability of the optical fiber is thus realized.

The invention discloses a preparation method of a large-diameter 6061 aluminum alloy extruded pipe for a new energy automobile. The preparation method sequentially comprises the working procedures of alloy component optimization, smelting, melt purification, standing, degassing and deslagging, casting, homogenizing annealing, machining and extrusion. The alloy comprises the following elements in percentage by weight: 0.6%-0.70% of Si, 0.15%-0.20% of Fe, 0.28%-0.35% of Cu, 0.15%-0.20% of Mn, 0.85%-1.1% of Mg, 0.18%-0.25% of Zn, 0.14%-0.15% of Ti, 0.1%-0.3% of Cr, 0.05% of Ni and the balance of Al, the ratio of Mg to Si is adjusted to be 1.40%-1.53, and a heat treatment process of a cast ingot is optimized. Meanwhile, in order to ensure that the pipe meets the precision requirement and the surface quality requirement, a tool, a mold and extrusion parameters are designed, the aluminum alloy extruded pipe with good plasticity, toughness and rigidity, uniform component distribution and fine crystal grains is obtained, and therefore the use requirement of a hydrogen storage pipe of a new energy automobile is met.

The invention provides an annealing treatment device for enameled wire processing and a using method, the device comprises a heating mechanism, awind-heat annealing mechanism, a surface cleaning mechanism, a driving mechanism and a sealing cover which are arranged on a support, the heating mechanism is a spiral copper pipe, and an iron copper wire is subjected to electromagnetic heating treatment through an external radio frequency power supply of the spiral copper pipe; and the wind-heat annealing mechanism is a wind-heat box with a heating function and is used for prolonging the annealing time of the copper wire and fully annealing the copper wire, the surface cleaning mechanism is a cleaning box and is used for timely treating a surface oxide film of the quenched copper wire, the driving mechanism comprises a leading-in wheel, a steering wheel, a leading-out wheel and a gear motor, and a power shaft of the gear motor is connected with the leading-out wheel. The gear motor provides single drive to pull the copper wire, looseness between the leading-in wheel and the leading-out wheel is prevented, the structure is reasonable, the enameled wire is fully and uniformly annealed, high temperature and air contact oxidation is prevented, and stains on the surface of the enameled wire are cleaned in time.

The invention belongs to the field of batteries, and discloses a method for improving pure copper grain boundary corrosion resistance by increasing coherent twin grain boundary proportion, which comprises the following steps: performing repeated room-temperature multidirectional forging on pure copper, and then recrystallizing and annealing for 10 minutes at 600 DEG C to homogenize the structure of the pure copper; and the pure copper with the homogenized structure is subjected to small-deformation cold rolling, the rolling deformation is 5%, and then vacuum annealing is conducted at the temperature of 650 DEG C for 5-15 min. Pure copper is subjected to small-deformation high-temperature short-time annealing to obtain a primary recrystallization structure, although the grain boundary characteristic distribution of the primary recrystallization structure has a certain proportion of sigma 3 special grain boundaries, the proportion of coherent twin boundaries is not high, and a considerable number of non-coherent twin boundaries exist; according to the method, the annealing time is prolonged on the basis of primary recrystallization, the crystal grains are further made to grow, the result shows that the proportion of coherent twin boundaries is monotonically increased along with the growth of the crystal grains and finally exceeds 50%, and the crystal boundary corrosion resistance of pure copper is greatly improved.

The invention relates to a forging method for a R6-grade mooring chain riveting swivel. The swivel comprises a swivel body and a swivel bolt. The method comprises the following steps: 1) performing feeding; 2) forming a blank of the riveting swivel body; 3) molding the riveting swivel body; (4) forming a blank of the riveting swivel bolt; 5) molding the riveting swivel bolt; 6) performing edge trimming and polishing. The forged swivel product has good mechanical properties and meets size and shape requirements. The forging method is applicable to the processing field of the R6-grade mooring chain riveting swivel.