133results about How to "Raise the annealing temperature" patented technology

A method and apparatus for rapid and selective heating of materials using variable frequency RF and microwaves. The apparatus uses variable frequency solid state electronics as a microwave power source, a novel microwave heating head to couple microwave energy to the target materials and a match-up network to tune the frequency and impedance match between the microwave source and the load. An electronic and computer measurement and control system is employed to monitor and control the microwave heating process. The method teaches the use of inductive microwave coupling for thin conductive materials such as metal film and impurity doped silicon wafers. The method also teaches the use of capacitive microwave coupling for dielectric material such as glass and ceramics. The method further teaches the use of rapid and selective heating of heterostructure for bonding and sealing of mems and integrated circuits. The method and apparatus can provide ultra-high heating speed along with ultra-high heating temperatures for rapid thermal processing of semiconductors and other materials. It also allows the use of bonding materials with high melting temperature for strong bonding and sealing of mems and IC devices. The apparatus further provides for high interconnection density of integrated circuits as connections are made without the use of solder bumps.

A method for fabricating a diode is disclosed. In one embodiment, the method includes forming a Schottky contact on an epitaxial layer of silicon carbide (SiC) and annealing the Schottky contact at a temperature in the range of 300° C. to 700° C. The Schottky contact is formed of a layer of molybdenum.

The invention discloses a Cu-Fe in-situ composite with boron, silver and rare earth elements added and a preparation method thereof. The invention is characterized by adopting multimode comprehensive strengthening technology such as multi-micro alloying, solid solution strengthening, aging strengthening, fine grain strengthening, distortion strengthening, fiber strengthening and the like, using Cu as the base and adding a little Fe and trace Ag and B, rare earth or rare earth compounds to prepare the high strength and high conductivity copper alloy material through smelting, casting, hot forging or hot rolling, solid solution treatment, cold rolling or cold drawing, aging and the like. The prepared material has the advantages of high strength, good electric and thermal conductivity, simple preparation process and low cost, thus realizing wide application in the fields such as electronics, information, transportation, energy, metallurgy, electromechanics and the like.

The invention discloses a DNA sequencing method and a next generation sequencing library. The sequencing method comprises the steps of mixing a DNA fragment to be measured with a random primer Read2-NB, conducting an extension reaction, connecting the 3' end of an obtained extension product with a chain b which is in a double chain joint Read1-Adapter and contains a sequencing platform specific sequence, and taking amplification connection products of specific primers T1 and T2, so that construction of the next generation sequencing library is completed, and subsequently, conducting sequencing. By means of the DNA sequencing method and the next generation sequencing library, library construction and sequencing can be conducted on double chain DNA and/or single chain DNA, the amount of required initial DNA is lowered, applicability of limited samples for template DNA is great, and the original template sequence of the target single chain DNA can be directly distinguished out of the sequencing result.

An electrochemical energy source, comprising: a substrate, and at least one stack deposited onto said substrate, the stack comprising at least the active layers: an anode, a cathode, and an intermediate solid-state electrolyte separating said anode and said cathode. An electronic device provided with an electrochemical energy source according to the invention and a method for the manufacturing of an electrochemical source according to the invention.

In one embodiment, a SOT device is provided that replaces a traditional NM layer adjacent to a magnetic layer with a NM layer that is compatible with CMOS technology. The NM layer may include a CMOS-compatible composite (e.g., CuPt) alloy, a TI (e.g., Bi₂Se₃, Bi_xSe_1-x, Bi_1-xSb_x, etc.) or a TI/non-magnetic metal (e.g., Bi₂Se₃/Ag, Bi_xSe_1-x/Ag, Bi_1-xSb_x/Ag, etc.) interface, that provides efficient spin current generation. Spin current may be generated in various manners, including extrinsic SHE, TSS or Rashba effect.

A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element which accelerates the crystallization of the silicon film, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities. Otherwise, the catalyst element can be incorporated into the structure by introducing it into the impurity region by means of ion implantation and the like. Also a process for fabricating a thin film transistor, which comprises forming a gate electrode, a gate insulating film, and an amorphous silicon film on a substrate, implanting impurities into the amorphous silicon film to form source and drain regions as the impurity regions, introducing a catalyst element into the impurity region by adhering a coating containing the catalyst element of by means of ion doping and the like, and annealing the resulting structure at a temperature lower than the deformation temperature of the substrate to activate the doped impurities.

The invention discloses a decarbonization process for producing non-oriented silicon steel. The method adopts a water-based quantified decarbonization hood type bright annealing furnace. 20 to 30 percent of hydrogen gas and 70 to 80 percent of nitrogen gas enter the furnace through a warm water humidifier together with water vapor. The ratio of the water vapor differential pressure to the hydrogen gas differential pressure in the furnace is kept 0.2 to 0.5; and multistage heating is carried out so as to reach the temperature of 800 to 850 DEG C. In the weakly oxidizing atmosphere, the water vapor is used for quick decarbonization; and the decarbonization time is controlled between 12 and 15 hours. The decarbonization process for producing the non-oriented silicon steel has good effects and high efficiency, and can remarkably improve the product quality.

The invention discloses a Cu-Cr in-situ composite with boron, silver and rare earth elements added and a preparation method thereof. The invention is characterized by adopting multimode comprehensive strengthening technology such as multi-micro alloying, solid solution strengthening, aging strengthening, fine grain strengthening, distortion strengthening, fiber strengthening and the like, using Cu as the base and adding a little Cr and trace Ag and B, rare earth or rare earth compounds to prepare the high performance copper alloy in-situ composite through smelting, casting, hot forging or hot rolling, solid solution treatment, cold rolling or cold drawing, aging and the like. The prepared material has the advantages of high strength, good electric and thermal conductivity, simple preparation process and low cost, thus realizing industrial application in the aspects such as electrician switches, contact materials, resistance electrodes, rotor conductors of large electrical high speed turbine generators, overhead conductors of electric cars and electric trains, lead frames of very large scale integrated circuits and the like.

The invention relates to a detection kit and method for DNA methylation, especially to a detection kit and method for DNA methylation without CpG sites at flanking sequences. The kit and method employa Taqman probe binding to a minor groove binder (MGB) and can determine the methylation of both a CpG island (CGI) and isolated CpG sites in CpG open sea and the like without CpG at two flanking sequences. The kit and method provided by the invention are specific and sensitive, simple to operate, and does not require a control reaction or a fully-methylated standard DNA substance as a reference,thereby overcoming defects resulting from the control reaction and the fully-methylated standard DNA substance. In addition, the kit and method have higher repeatability and accuracy than the existingMethyLight technology.

The invention discloses a kit for detecting CYP3A4 and CYP3A5 polymorphic sites and a method thereof. The kit comprises specificity upstream and downstream primer sequences of CYP3A4*1G shown in sequences 1-4 in a sequence table, specificity TaqMan-MGB bi-fluorescence probe sequences of CYP3A4*1G shown in sequences 5-8, specificity upstream and downstream primer sequences of CYP3A5*3 shown in sequences 9-12 and specificity TaqMan-MGB bi-fluorescence probe sequences of CYP3A5*3 shown in sequences 13-16. The kit has the advantages that the specificity is high, pollution is prevented, the sensitivity is high, the detection speed is high, result analysis is simple, and the accuracy is high; the kit can judge the metabolism capacity of to-be-detected objects to fentanyl medicine by detecting polymorphic sites of CYP3A4 and CYP3A5 genes, the using amount of medicine such as fentanyl can be more accurately and effectively guided accordingly, and the kit has the actual clinical application value. The kit is applied to clinical diagnosis, the fit degree between the kit and the prior art is higher, the cost is low, and repeatability is high.

The invention relates to the technical field of molecule detection for guiding tumor therapy and in particular discloses a primer used for detecting mutation of exons 9 and 11 of a c-kit gene and application thereof to the identification of the sensitivity of a tumor patient to imatinib (gleevec) medicaments. First, a DNA is extracted from a tumor tissue or a blood sample of a patient; secondly, a target fragment is amplified by the designed primer; and finally, the mutation locuses of the kit exons 9 and 11 are detected by sequencing the target segment so as to guide the therapy on the tumor patient.

The invention belongs to the technical field of nucleic acid detection, and particularly relates to a multiple PCR method for improving amplification specificity and uniformity. The method comprises the steps as follows: extracting genome DNA from a sample; performing fragmentation and purification on the extracted genome DNA; carrying out a PCR amplification reaction by multiple specific primer pairs with the purified genome DNA as a template, wherein in the PCR amplification reaction, differential temperatures from low to high are used for annealing. The fragmentation and purification treatment is performed on DNA, the template and primers can be bond quickly, and the use rate of the primers is increased. Firstly, in a lower annealing temperature mode, amplification primers are fully bond to template DNA, the annealing temperature is increased gradually, and the binding specificity of all primers is improved; and amplification specificity and uniformity of the multiple PCR are remarkably improved.

The invention discloses a production method of a cold-rolled annealed low-carbon steel strip with low cost and high stamping forming performance. The production method includes the procedures of smelting, continuous casting, hot rolling, cold rolling and continuous annealing. In the hot rolling procedure, the heating temperature of a hot-rolled plate blank is 1,050-1,200 DEG C, the heating time is70-200 min, the hot rolling finish rolling temperature is 810-850 DEG C, and the coiling temperature is 710-750 DEG C. In the cold rolling procedure, the cold rolling rolling speed is controlled at 800-1,200 m/min. The content of the solid solution C in steel is controlled by controlling hot rolling process parameters, it is promoted that {111} recrystallized grains fully grow by controlling thecold rolling and annealing temperatures, and the stamping forming performance is improved. No high-cost alloys such as niobium and titanium are added into used chemical components, it is not needed toincrease the cold rolling reduction rate or increase the annealing temperature, and the production method has the beneficial effects that the cost is low, and production is easy to control.

The present invention discloses a semi-random primer based on a PCR walking technology, a kit and a method for performing PCR walking by using the kit. The sequence of the semi-random primer is represented by the SEQ ID NO.7 in the sequence list. The kit comprises the semi-random primer. The method is similar to the ordinary two-primer PCR, at most requires two PCR cycles to obtain a target sequence, and has characteristics of simple, rapid and efficient operation. According to the method, an annealing temperature of the whole PCR cycle process is increased, amplification specificity is increased, the used experimental materials are not limited, and the kit can be used by microorganism samples, animal samples and plant samples. The method can be used in experiments so as to simplify operations, shorten an experiment time, improve experiment efficiency, reduce experiment cost, and provide broad application prospects.

The invention discloses a box type annealing furnace with high uniformity and an annealing method thereof, belongs to the technical field of heat treatment of optical materials, and is used for mainly solving the problem of poor annealing uniformity in a conventional annealing technology. The box type annealing furnace is mainly characterized in that the box type annealing furnace is a cubic box type annealing furnace having a square horizontal cross section; a hearth of the box type annealing furnace is provided with heating elements along the walls at the periphery, and the heating elements are externally provided with heat conduction plates; the middle part of the hearth of the box type annealing furnace is provided with a three-dimensional heating column, the heating column is fixed on a rotary shaft passing through the top of the box type annealing furnace, and the rotary shaft is connected with a transmission device outside the furnace. The temperature field uniformity of the annealing furnace is greatly improved, products can have the temperature rapidly kept consistent with the temperature field during heating and cooling, and the temperatures of the center and the surface of the products more tend to be consistent. The products annealed by using the device and the method have good individual uniformity, and the whole furnace products are highly consistent, and thus the device and the method are suitable for annealing of products of high-end optical devices.

A nonvolatile semiconductor memory device is described where each memory cell is composed of a single field effect transistor with a dual gate dielectric comprising a dielectric interfacial layer in contact with a silicon substrate and a ferroelectric layer in between the interfacial layer and the gate electrode. To program (write) the cell the ferroelectric layer is polarized in one of two directions, the ferroelectric polarization creating a large electric field in the interfacial layer. This electric field causes electrons or holes to be transported across the interfacial layer and be trapped in the ferroelectric layer establishing a high (erased) or low (programmed) threshold voltage depending on the direction of the ferroelectric polarization representing the two logic states. To read the memory cell a voltage is applied to the drain of the selected transistor and depending on whether a high or low threshold state was programmed into the cell a low or high current is sensed.

The invention discloses double-sided dark battery foil and a preparation method thereof. The double-sided dark battery foil is prepared from the following component raw materials: Si, Fe, Cu, Mn, Mg,Ti and Al. The preparation method of the double-sided dark battery foil comprises the following steps: (1) the raw materials are added into a smelting furnace to be smelted, and molten liquid is obtained; (2) the molten liquid is input into a cast-rolling machine to be cast-rolled into a blank; (3) the cast-rolled blank is cold-rolled by a cold-rolling machine, and homogenizing annealing treatmentis conducted; and (4) after an aluminum coil subjected to homogenizing annealing is cooled to the room temperature, cold rolling in passes is conducted; (5) rerolling and edge cutting are conducted;(6) intermediate annealing treatment is conducted; (7) the aluminum coil subjected to intermediate annealing treatment is cold-rolled; and (8) the cold-rolled aluminum coil is rerolled, then foil rolling is conducted, and thus the double-sided dark battery foil is prepared. Aluminum powder on the dark side of the double-sided dark battery foil produced by the invention is effectively controlled,corrugated edges are avoided, the using performance and surface quality of a finished product are high, and the double-sided dark battery foil can be applied to most batteries.

The invention provides a preparation method of low-temperature GO-oriented silicon steel, mainly comprising the following steps of: smelting, continuous casting, hot-rolling, primary cold-rolling, secondary cold-rolling and high-temperature annealing. The preparation method is characterized in that an intermediate annealing process of a cold-rolled sheet is carried out between the primary cold-rolling and the secondary cold-rolling, wherein the annealing process comprises the following steps of: adopting a rapid heating method, wherein the heating speed is 15 to 35DEG C/s, the annealing temperature is 850 to 1150 DEG C, the heat preservation time is 2.5 to 5.5min, the protection atmosphere is 20%H2+80%N2, and the dew point is 35 to 60 DEG C; firstly coating an Al2O3 separant on the surface of the cold-rolled sheet after the secondary cold-rolling, and then carrying out the high-temperature annealing. The preparation method of the low-temperature GO-oriented silicon steel reduces the heating temperature of a sheet blank and the energy consumption of per ton steel, saves the energy source, omits a decarburizing annealing process by adopting a special process of the intermediate annealing process and using the Al2O3 as the separant of the high-temperature annealing, thereby greatly reducing the energy consumption and the production cost.