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Multimodal imaging apparatus

The present invention relates to a multimodal imaging apparatus (1a, 1b) for imaging a process (63) in a subject (23), said process (63) causing the emission of gamma quanta (25, 61), said apparatus (1a, 1b) comprising a scintillator (3) including scintillator elements (31) for capturing incident gamma quanta (25, 61) generated by the radiotracer and for emitting scintillation photons (26) in response to said captured gamma quanta (25, 61), a photodetector (5) including photosensitive elements (33) for capturing the emitted scintillation photons (26) and for determining a spatial distribution of the scintillation photons, and a readout electronics (7) for determining the impact position of an incident gamma quantum in the scintillator (3) and/or a parameter indicative of the emission point of the gamma quantum (25, 61) in the subject (23) based on the spatial distribution of the scintillation photons, wherein the imaging apparatus (1a, 1b) is configured to be switched between a first operation mode for detecting low energy gamma quanta and a second operation mode for detecting high energy gamma quanta, wherein the high energy gamma quanta have a higher energy than the low energy gamma quanta, and the scintillator (3) is arranged to capture incident gamma quanta (25, 61) from the same area of interest (65) in the first operation mode and in the second operation mode without requiring a relative movement of the subject (23) versus the scintillator (3), wherein the scintillator (3) comprises an array of scintillator elements (31) including a first region with high energy scintillator elements (27) for capturing high energy gamma quanta and a second region with low energy scintillator elements (29) for capturing low energy gamma quanta; and/or the apparatus (1a, 1b) further comprises a positioning mechanism (35) for changing the orientation and/or position of the scintillator elements (31), in particular for tilting the scintillator elements (31), to switch the imaging apparatus (1a, 1b) between the first operation mode and the second operation mode.
Owner:KONINKLJIJKE PHILIPS NV

Semiconductor structure and method for forming the same

A semiconductor structure and a method for forming the same are provided. In one form, a forming method includes: providing a base, a gate structure, a source-drain doping region, and an interlayer dielectric layer; removing the gate structure located in an isolation region to form an isolation opening and expose the top and side walls of a fin located in the isolation region; performing first ion-doping on the fin under the isolation opening to form an isolation doped region, a doping type of the isolation doped region being different from a doping type of the source-drain doping region; and filling the isolation opening with an isolation structure after the doping, the isolation structure straddling the fin of the isolation region. In embodiments and implementations of the present disclosure, the isolation doped region is formed, a doping concentration of inversion ions in the fin of the isolation region can thus be increased, and a barrier of a P-N junction formed by the source-drain doping region and the fin of the isolation region can be increased accordingly, to prevent the device from generating a conduction current in the fin of the isolation region during operation, thereby implementing isolation between the fin of the isolation region and the fin of other regions. Moreover, there is no need to perform a fin cut process. Hence the fin is made into a continuous structure, which helps prevent stress relief in the fin.
Owner:SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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