Pressure sensor forming method

A pressure sensor and electrode layer technology, which is applied in the fluid pressure measurement, instrument, and measurement force using capacitance change, can solve problems such as poor performance of the pressure sensor, and achieve the effect of eliminating adverse effects, reducing resistivity, and improving performance.

Active Publication Date: 2014-11-19
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0005] However, the pressure sensor formed by the existing method of forming the pressure sensor has poor performance

Method used

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Embodiment Construction

[0028] As mentioned in the background, existing methods form pressure sensors with poor performance. After further analysis of the reasons, it turns out that the existing method usually adopts the furnace tube process to form the top electrode layer of the pressure sensor. However, the top electrode layer formed by the furnace tube process has relatively large internal stress and high resistivity. The top electrode layer is used as the upper plate of the chamber for sensing pressure changes (the chamber is located between the bottom electrode and the top electrode), and its internal stress is required to be as low as possible so that accurate pressure changes can be obtained. At the same time, its resistance is required As low as possible, so that better conductivity characteristics can be obtained. However, if the internal stress of the top electrode layer is large, it is easy to crack itself, making the pressure sensor invalid. Even if the top electrode layer is not cracked...

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Abstract

A pressure sensor forming method includes the steps that a semiconductor substrate is provided; a bottom electrode layer is formed on the semiconductor substrate; a sacrificial layer is formed on the semiconductor substrate, and the bottom electrode layer is covered with the sacrificial layer; a top electrode layer is formed, and the top face and the side faces of the sacrificial layer and part of the semiconductor substrate are covered with the top electrode layer; the top electrode layer is processed through laser annealing; after the laser processing, an opening penetrating through the top electrode layer in the thickness direction is formed in the top electrode layer, and the sacrificial layer is exposed out of the opening; the sacrificial layer is removed through the opening. Through the pressure sensor forming method, the performance of a formed pressure sensor can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a pressure sensor. Background technique [0002] With the development of Micro-Electro-Mechanical-System (MEMS) technology, various sensors have been miniaturized. [0003] At present, one of the most widely used miniaturized sensors is the MEMS pressure sensor. The MEMS pressure sensor can use the sensitive film in the MEMS to receive external pressure information, and the converted signal is amplified by the processing circuit to measure the specific pressure. pressure information. MEMS pressure sensors are widely used in automotive electronics such as TPMS (tire pressure monitoring system), consumer electronics such as tire pressure gauges and sphygmomanometers, industrial electronics such as digital pressure gauges, digital flow meters, and industrial ingredient weighing. [0004] According to the different working principles of pressure senso...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/14G01L9/12B81C1/00
Inventor 许忠义
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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