The utility model provides a device for preparing
silicon carbide crystals by a
liquid phase method with a uniform flow field, which comprises a
graphite crucible and a
seed crystal rod, a notch is arranged on a top plate of the
graphite crucible, the lower end of the
seed crystal rod extends into an inner cavity of the
graphite crucible from the notch of the
graphite crucible and is provided with seed crystals, a graphite column is further arranged in the inner cavity of the
graphite crucible, and the graphite column is connected with the
seed crystal rod. The axial direction of the graphite column extends in the left-right direction and is located below the seed
crystal, the left end and the right end of the graphite column are suspended and supported through graphite supports respectively, and the graphite rotating shaft is driven by a driving mechanism to rotate. Compared with the prior art, the
graphite crucible has the advantages that the rotatable graphite column is arranged in the inner cavity of the graphite crucible, and the transversely arranged graphite column can generate an upward
stream in the rotating process, so that the
convection intensity of the center of
raw material melt in the graphite crucible can be enhanced; the problem that the produced
silicon carbide crystals are not uniform due to non-uniform
doping elements is effectively solved. And meanwhile, the graphite column can supplement a
carbon source, so that the service life of the graphite crucible is prolonged.