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A kind of temperature control system and method for sapphire crystal annealing

A sapphire crystal and temperature control system technology, which is applied in the field of temperature control system for sapphire crystal annealing, can solve the problems of no annealing equipment, etc., and achieve the effects of prolonging annealing time, improving efficiency, and saving materials

Active Publication Date: 2021-04-02
国宏中晶集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a temperature control system and method for sapphire crystal annealing, so as to solve the technical problem that there is no special controllable annealing equipment in the prior art

Method used

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  • A kind of temperature control system and method for sapphire crystal annealing
  • A kind of temperature control system and method for sapphire crystal annealing

Examples

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Embodiment 1

[0017] by figure 1Shown as an example, specifically implemented in the following manner: a temperature control system for sapphire crystal annealing, comprising a growth furnace furnace body 1, a heat preservation cover 2, a crucible 3, and a heating device 4, characterized in that: the temperature control system for annealing is also Including flow controller 5, water inlet 6, flow control device 7, thermometer 8, air outlet pipe 9, barometer 10, heat transfer rod 11, base 12, crucible holder 13, seed tank 14, vacuum system 15, water outlet 16 1. Rack-type temperature measuring thermocouple group 17 and air inlet pipe 18. A heat transfer rod 11 passes through the interior of the growth furnace body 1 transversely, and the left end of the heat transfer rod 11 is provided with a water outlet 16, and the water outlet 16 is arranged on On the outside of the growth furnace body 1, the right end of the heat transfer rod 11 is provided with a water inlet 6, and a flow controller 5 i...

Embodiment 2

[0021] A temperature control method for sapphire crystal annealing, which utilizes a temperature control system for sapphire crystal annealing as described above to implement, is characterized in that it comprises the following steps: 1) annealing temperature step setting step: setting the annealing temperature step, Set the initial temperature to 1500°C, and set N-level cooling intervals, each level of annealing temperature step is 50°C, and the final temperature of N-level cooling is TPn (n=1,2,3...), and set each level The time required for cooling down is set as Tn minutes (n=1,2,3...) for the Nth level cooling down from 1500°C, the final temperature of annealing is 50°C, a total of 29 annealing temperature steps; 2 ) annealing heating load determination step: in the case of not placing sapphire in the temperature control system for sapphire crystal annealing or placing a replacement standard part similar to the sapphire crystal shape and specific heat, close the growth fur...

Embodiment 3

[0023] A temperature control method for sapphire crystal annealing, which utilizes a temperature control system for sapphire crystal annealing as described above to implement, is characterized in that it comprises the following steps: 1) annealing temperature step setting step: setting the annealing temperature step, Set the initial temperature to 1500°C, and set N-level cooling intervals, each level of annealing temperature step is 60°C, and the final temperature of N-level cooling is TPn (n=1,2,3...), and set each level The time required for cooling down is set to Tn minutes (n=1, 2, 3...) for the Nth level cooling down from 1500°C, the final temperature of annealing is 60°C, and there are 24 annealing temperature steps in total; 2 ) annealing heating load determination step: in the case of not placing sapphire in the temperature control system for sapphire crystal annealing or placing a replacement standard part similar to the sapphire crystal shape and specific heat, close ...

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Abstract

The invention discloses a temperature control system for sapphire crystal annealing. The temperature control system comprises a growth furnace body, wherein a heat transfer rod transversely runs through the interior of the growth furnace body; a water outlet is formed in the outer side of the growth furnace body; a water inlet is formed in the right end of the heat transfer rod; a flow controlleris mounted on the left side of the water inlet; the middle part of the heat transfer rod runs through a base and is in close contact with an inner hole in the base; the upper side of the base is connected with a crucible support; a seed crystal trough is formed in the bottom of the crucible; rack-type temperature measuring thermocouple sets are mounted on the periphery of the crucible; a heat-insulating hood is mounted between the growth furnace body and the crucible; a vacuum system is mounted on the left side of the lower side of the growth furnace body; a gas inlet pipe and a gas outlet pipe are mounted on the upper side of the left side and the lower side of the right side of the growth furnace body respectively. The invention further discloses a method for annealing by using the temperature control system.

Description

technical field [0001] The invention relates to the technical field of sapphire crystal annealing, in particular to a temperature control system and method for sapphire crystal annealing. Background technique [0002] As an important technical crystal, sapphire crystal has been widely used in many fields of science and technology, national defense and civil industry, and electronic technology. Such as infrared window materials, substrate substrates in the field of microelectronics, laser substrates, optical components and other uses. In order to eliminate inclusions and color centers in flaky sapphire crystals, it is necessary to anneal the grown crystal samples under different atmospheres. At present, there are a variety of techniques for growing sapphire crystals that can be implemented, but these methods are basically carried out at high temperature. During the process of annealing the sapphire crystal to room temperature, due to the properties of the crystal itself, ann...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02C30B29/20
CPCC30B29/20C30B33/02
Inventor 张岩付吉国董伟赵然周卫东曾蕾
Owner 国宏中晶集团有限公司
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