Method for preparing alumina passivation film on surface of crystalline silicon solar energy battery

Abstract

The invention discloses a method for preparing an alumina passivation film on the surface of a crystalline silicon solar energy battery. The method involves plating an alumina film on the surface of the crystalline silicon solar energy battery. The method comprises the following steps: (1), selecting materials, i.e., reacting waterless ethanol to aluminum chloride so as to obtain aluminum; (2), preparing alumina sol, i.e., dissolving the aluminum chloride material in the waterless ethanol with a certain concentration, performing full stirring and concussion until a solution becomes clear, and adjusting the pH value of the solution to be within 1-2; and (3), preparing the alumina passivation film, i.e., dropping the prepared alumina sol on surface of the crystalline silicon solar energy battery and performing spin coating, then drying a spin-coated sample, under a certain condition, performing annealing, and performing uniform cooling to a normal temperature after the annealing is finished, such that the alumina passivation film is prepared on the surface of the crystalline silicon solar energy battery, and the film has a quite good passivation effect for the crystalline silicon solar energy battery. According to the invention, a chemical solution sedimentation method is employed, the method is simple and easy to implement, and the cost is low. The crystalline silicon solar energy battery is selected as a substrate, and the alumina film has the excellent passivation effect for the crystalline silicon solar energy battery.

Description

technical field [0001] The invention relates to a method for preparing an aluminum oxide passivation film on the surface of a crystalline silicon solar cell, in particular to using the aluminum oxide film to passivate the surface of the crystalline silicon solar cell. Background technique [0002] The aluminum oxide film has a very good passivation effect as a passivation film on the surface of crystalline silicon solar cells. Al 2 o 3 It is a wide bandgap dielectric material with a refractive index of about 1.65, no obvious light absorption in the visible light region, and a fixed negative charge density of up to 10 12 ~10 13 cm -2 , so it is very suitable for improving the optical and electrical characteristics of crystalline silicon solar cells, thereby increasing the conversion efficiency of the cells. [0003] There are many methods for preparing aluminum oxide thin films, such as: plasma enhanced chemical vapor deposition (PECVD), radio frequency magnetron sputter...

AI Technical Summary

Problems solved by technology

The aluminum oxide film prepared by plasma-enhanced chemical vapor deposition technology has a high deposition rate, but the required equipment is complicated and the cost is high

The preparation of aluminum oxide thin films by radio frequency magnetron sputtering technology requires large-scale vacuum equipment, and the preparation process is complicated, which greatly increases the preparation cost of aluminum oxide thin films and the energy consumption of related production equipment

Although the aluminum oxide thin film prepared by atomic layer deposition technology has good film performance, good shape retention and uniformity, the deposition rate of aluminum oxide thin film prepared by atomic layer deposition technology is low, which also limits the ability of atomic layer deposition technology. the rapid development of