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Method for preparing porous bismuth ferrate thin film by CSD (Chemical Solution Deposition) method

A bismuth ferrite, porous technology is applied in the field of preparing bismuth ferrite porous thin films by chemical solution deposition, which can solve the problems of reducing reaction activity, stoichiometric ratio imbalance, etc., and achieves simple process, large specific surface area, and enhanced photocatalytic performance. Effect

Inactive Publication Date: 2012-07-11
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Too many defects may also become electron / hole recombination centers and reduce the reactivity, and the defects are mainly caused by factors such as oxygen vacancies and stoichiometric ratio imbalance in bismuth ferrite materials.

Method used

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  • Method for preparing porous bismuth ferrate thin film by CSD (Chemical Solution Deposition) method
  • Method for preparing porous bismuth ferrate thin film by CSD (Chemical Solution Deposition) method

Examples

Experimental program
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Effect test

Embodiment 1

[0018] Step 1: Select the ITO / glass substrate as the substrate, place the cut ITO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning to remove grease and other impurities on the surface of the ITO / glass substrate Finally, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen;

[0019] Step 2: Place the ITO / glass substrate treated in step 1 in a UV irradiator for 20 minutes to make the surface of the substrate reach "atomic cleanliness". The high energy of UV irradiation can break the oxide bonds and form The hydroxyl group with better hydrophilicity can improve the hydrophilicity of the substrate;

[0020] Step 3: Fe(NO 3 ) 3 9H 2 O and Bi(NO 3 ) 3 ·5H 2 O was dissolved in ethylene glycol methyl ether and glacial acetic acid respectively, and mixed to form a precursor solution after dissolution. Adjust the concentration of Bi and Fe ions in the precursor solution to 0.01-1.0mol / L, and magnetically...

Embodiment 2

[0023] Step 1: Select the ITO / glass substrate as the substrate, place the cut ITO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning to remove grease and other impurities on the surface of the ITO / glass substrate Finally, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen;

[0024] Step 2: Place the ITO / glass substrate treated in step 1 in a UV irradiator for 20 minutes to make the surface of the substrate reach "atomic cleanliness". The high energy of UV irradiation can break the oxide bonds and form The hydroxyl group with better hydrophilicity can improve the hydrophilicity of the substrate;

[0025] Step 3: Fe(NO 3 ) 3 9H 2 O and Bi(NO 3 ) 3 ·5H 2 O was dissolved in ethylene glycol methyl ether and glacial acetic acid respectively, and mixed to form a precursor solution after dissolution. Adjust the concentration of Bi and Fe ions in the precursor solution to 0.01mol / L, and magnetically sti...

Embodiment 3

[0028] Step 1: Select the ITO / glass substrate as the substrate, place the cut ITO / glass substrate in detergent, acetone, and ethanol in sequence for ultrasonic cleaning to remove grease and other impurities on the surface of the ITO / glass substrate Finally, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen;

[0029] Step 2: Place the ITO / glass substrate treated in step 1 in a UV irradiator for 20 minutes to make the surface of the substrate reach "atomic cleanliness". The high energy of UV irradiation can break the oxide bonds and form The hydroxyl group with better hydrophilicity can improve the hydrophilicity of the substrate;

[0030] Step 3: Fe(NO 3 ) 3 9H 2 O and Bi(NO 3 ) 3 ·5H 2 O was dissolved in ethylene glycol methyl ether and glacial acetic acid respectively, and mixed to form a precursor solution after dissolution. The concentration of Bi and Fe ions in the precursor solution was adjusted to 0.1mol / L, and magnetic st...

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Abstract

The invention provides a method for preparing a porous bismuth ferrate thin film by a CSD (Chemical Solution Deposition) method. The method comprises the steps of: (1) cleaning an ITO (Indium Tin Oxide) / glass substrate, blow-drying with nitrogen gas, and irradiating with an ultraviolet illumination instrument for 20min; (2) respectively dissolving Fe(NO3)3.9H2O and Bi(NO3)3.5H2O in ethylene glycol monomethyl ether and glacial acetic acid, mixing to form a precursor solution, and magnetically stirring to obtain a stable BiFeO3 precursor; and (3) carrying out coating treatment on the substrate surface with the precursor, drying after coating is finished, repeating coating treatment multiple times to obtain set thin film thickness, finally rapidly heating to 350 DEG C, pre-annealing for 5min, and then annealing at 500 DEG C for 30-120min. The bismuth ferrate thin film prepared by the method is few in internal defects and high in catalysis performance.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to a method for preparing a bismuth ferrite porous film by chemical solution deposition (Chemical Solution Deposition, CSD). The porous film is obtained by using the characteristic that the precursor in the CSD method can be decomposed relatively quickly, and the pores are improved. specific surface area, thereby improving its photocatalytic performance. Background technique [0002] BiFeO 3 With a trigonal twisted perovskite structure, it is one of the few single-phase ferromagnetic materials that have both ferroelectricity and magnetism at room temperature, and has two structural orders at room temperature, namely ferroelectric order (T C =810℃) and G-type antiferromagnetic order (T N =380°C), making it one of the important candidates for magnetoelectric materials. Simultaneously BiFeO 3 can also be used as a photocatalyst, since BiFeO 3 It has a narrow band gap (2.2eV), hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22
Inventor 谈国强程蒙
Owner SHAANXI UNIV OF SCI & TECH
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