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Metallic oxide resistor storage unit and low-temperature photochemical preparation method thereof

A technology of resistance storage and resistance conversion, applied in the direction of electrical components, etc., can solve the problems of poor durability, slow reading and writing speed, high operating voltage, etc., and achieve the effect of good durability and good application prospects

Inactive Publication Date: 2013-10-09
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] The rapid development of information technology has made traditional storage devices face huge challenges. Non-volatile storage devices have received a lot of attention and research because of their characteristics that the stored data will not be lost after power off. Flash memory is one of the widely used non-volatile memory devices. Volatile random access memory device, but its application is limited due to its high operating voltage, slow read and write speed, and poor endurance

Method used

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  • Metallic oxide resistor storage unit and low-temperature photochemical preparation method thereof
  • Metallic oxide resistor storage unit and low-temperature photochemical preparation method thereof
  • Metallic oxide resistor storage unit and low-temperature photochemical preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0020] Structure and composition of resistive memory cells: Pt / InGaZnO / Pt resistive memory cells prepared by low-temperature chemical solution deposition and room temperature photochemical treatment, such as figure 1 As shown, the conductive bottom electrode and the conductive top electrode are both Pt, and the InGaZnO thin film is the resistance switching layer.

[0021] Preparation of resistive memory cells:

[0022] 1. Preparation of InGaZnO precursor solution: the solutes are indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate respectively, and the solvent is ethylene glycol methyl ether. The mol ratio of hydrated indium nitrate, hydrated nitrate and zinc acetate dihydrate is 1: 1: 1, and then heated to 60 oC Stir at constant temperature for 3 hours until completely dissolved.

[0023] 2. Preparation of the conductive bottom electrode: select a p-type Si substrate, and first prepare SiO by thermal oxidation and sputtering 2 Layer and Ti adhesion ...

Embodiment 2

[0029] Structure and composition of resistive memory cells: Pt / InGa prepared by low temperature chemical solution deposition and room temperature photochemical treatment 1.5 ZnO / Pt resistive memory cells such as figure 1 As shown, the conductive bottom electrode and the conductive top electrode are both Pt, InGa 1.5 The ZnO thin film is the resistance switching layer.

[0030] Preparation of resistive memory cells:

[0031] 1. InGa 1.5 Preparation of ZnO precursor solution: the solutes are indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate respectively, and the solvent is ethylene glycol methyl ether. The mol ratio of hydrated indium nitrate, hydrated nitrate and zinc acetate dihydrate is 1: 1.5: 1, and then heated to 60 oC Stir at constant temperature for 3 hours until completely dissolved.

[0032] 2. Preparation of the conductive bottom electrode: select a p-type Si substrate, and first prepare SiO by thermal oxidation and sputtering 2 Layer a...

Embodiment 3

[0040] Structure and composition of resistive memory cells: Pt / InGaZnO / TiN resistive memory cells prepared by low-temperature chemical solution deposition and room temperature photochemical treatment, such as figure 1 As shown, the conductive top electrode is Pt, the conductive bottom electrode is TiN, and the InGaZnO thin film is the resistance transition layer.

[0041] Preparation of resistive memory cells:

[0042] 1. Preparation of InGaZnO precursor solution: the solutes are indium nitrate hydrate, gallium nitrate hydrate and zinc acetate dihydrate respectively, and the solvent is ethylene glycol methyl ether. The mol ratio of hydrated indium nitrate, hydrated nitrate and zinc acetate dihydrate is 1: 1: 1, and then heated to 60 oC Stir at constant temperature for 3 hours until completely dissolved.

[0043] 2. Preparation of the conductive bottom electrode: select a p-type Si substrate, and first prepare SiO by thermal oxidation and sputtering 2 Layer and Ti adhesion ...

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Abstract

The invention discloses a metallic oxide resistor storage unit and a low-temperature photochemical preparation method thereof, and belongs to the technical field of novel non-volatile memory devices. The resistor storage unit is formed by a conducting bottom electrode, an InxGayZnzO membrane and a conducting top electrode. The preparation method of the storage unit comprises the step that the conducting bottom electrode and the conducting top electrode are prepared on a substrate and the InxGayZnzO membrane respectively by means of the vacuum coating technique. A chemical solution deposition method is adopted in preparation of the InxGayZnzO membrane, then a precursor membrane of the InxGayZnzO membrane is placed under an ultraviolet lamp, and photochemical processing of indoor temperature illumination is carried out on the precursor membrane. According to the metallic oxide resistor storage unit and the low-temperature photochemical preparation method, the InxGayZnzO resistor storage unit shows excellent resistance transformation characteristics under a voltage scanning mode, the metallic oxide resistor storage unit has good durability in resistance transformation characteristics and stability in voltage transformation, the excellent characteristics shown that the metallic oxide resistor storage unit and the low-temperature photochemical preparation method have potential application value in the technical field of non-volatile memory devices.

Description

technical field [0001] The invention relates to the technical field of non-volatile memory devices, in particular to a low-temperature photochemical solution method for preparing amorphous In-based x Ga y Zn z O thin film resistive memory cells. Background technique [0002] The rapid development of information technology has made traditional storage devices face huge challenges. Non-volatile storage devices have received a lot of attention and research because of their characteristics that the stored data will not be lost after power off. Flash memory is one of the widely used non-volatile memory devices. Volatile random access memory device, but its application is limited due to its high operating voltage, slow read and write speed, and poor endurance. Emerging nonvolatile memory devices, such as ferroelectric memory, phase change memory, magnetoresistive memory, and resistive memory, have received a lot of attention. Resistive memory is a kind of random access memory ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 包定华胡伟
Owner SUN YAT SEN UNIV
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