Resistance-type random storage component and preparation method thereof

A resistive random storage element technology, applied in electrical components, electric solid state devices, circuits, etc., to achieve the effects of excellent high-low resistance state transition characteristics, excellent performance, excellent memory retention characteristics and continuous cycle read and write capabilities

Inactive Publication Date: 2011-09-14
SUN YAT SEN UNIV
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is no information about NiFe 2 o 4 Research Report on Non-volatile Resistive Random Access Memory Properties of Thin Films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistance-type random storage component and preparation method thereof
  • Resistance-type random storage component and preparation method thereof
  • Resistance-type random storage component and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Example 1 Preparation of NiFe by Chemical Solution Deposition 2 o 4 RRAM

[0028] 1. NiFe 2 o 4 Precursor preparation: NiFe 2 o 4 The solvent of precursor solution is the mixed solution of 32ml ethylene glycol methyl ether and 16ml glacial acetic acid, and solute is 8.2030g ferric nitrate nonahydrate (Fe(NO 3 ) 3 9H 2 O) and 2.5392g nickel acetate tetrahydrate (C 4 h 6 NiO 4 4H 2 O), stirred at room temperature for 6 hours until completely dissolved, that is, 50ml of 0.2mol / L NiFe 2 o 4 Precursor.

[0029] 2. NiFe 2 o 4 Precursor film preparation: NiFe 2 o 4 The precursor solution is spin-coated on the Pt substrate, the spin-coating parameters are adjusted to 3000rpm, the pretreatment temperature of each spin-coating is 300°C, and the number of spin-coating is 8 times, that is, NiFe 2 o 4 precursor film.

[0030] 3. NiFe 2 o 4 Precursor film heat treatment: the prepared NiFe 2 o 4 The precursor film is heat-treated at 700°C for 1 hour to complete...

Embodiment 2

[0033] Example 2 Preparation of NiFe by chemical solution deposition 2 o 4 RRAM

[0034] 1. NiFe 2 o 4 Precursor preparation: NiFe 2 o 4 The solvent of precursor solution is the mixed solution of 32ml ethylene glycol methyl ether and 16ml glacial acetic acid, and solute is 8.2030g ferric nitrate nonahydrate (Fe(NO 3 ) 3 9H 2 O) and 2.5392g nickel acetate tetrahydrate (C 4 h 6 NiO 4 4H 2 O), stirred at room temperature for 6 hours until completely dissolved, that is, 50ml of 0.2mol / L NiFe 2 o 4 Precursor.

[0035] 2. NiFe 2 o 4 Precursor film preparation: NiFe2 o 4 The precursor solution is spin-coated on the Pt substrate, the spin-coating parameters are adjusted to 3000rpm, the pretreatment temperature of each spin-coating is 300°C, and the number of spin-coating is 4 times, that is, NiFe 2 o 4 precursor film.

[0036] 3. NiFe 2 o 4 Precursor film heat treatment: the prepared NiFe 2 o 4 The precursor film is heat-treated at 400°C for 1 hour to complete t...

Embodiment 3

[0039] Example 3 Preparation of NiFe by pulsed laser deposition 2 o 4 RRAM

[0040] 1. NiFe 2 o 4 Film preparation, choose NiFe 2 o 4 Ceramic target, NiFe prepared on conductive substrate Pt by pulsed laser deposition 2 o 4 film. Laser energy is 300 mJ / cm 2 , the frequency is 5Hz, the air pressure is 50 Pa, the temperature is 500°C, and the deposition time is 1 hour, that is, NiFe 2 o 4 thin film with a thickness of 300nm.

[0041] 2. Preparation of NiFe 2 o 4 Thin film sandwich structure: using vacuum coating and mask technology, in NiFe 2 o 4 Cu electrodes are plated on the surface of the film to prepare Cu / NiFe 2 o 4 / Pt resistive random access memory element.

[0042] 3. Test Cu / NiFe with Keithley 236 Analyzer 2 o 4 The current-voltage characteristics, cycle characteristics and retention characteristics of / Pt resistive random access memory elements. Prepared NiFe 2 o 4 Thin film storage elements and the current-voltage characteristics, cycle characte...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a resistance-type storage component and a preparation method thereof, belonging to the technical field of a novel nonvolatile memory. The resistance-type random storage component is composed of a conducting substrate, a NiFe2O4 film and a conducting top electrode. According to the preparation method, a vacuum coating technology is used to plate a conducting top electrode on the surface of a Nife2O4 film to prepare the resistance-type storage component. In the preparation method of the NiFe2O4 film, chemical solution deposition process or pulse laser deposition process and the like is used. The Nife2O4 resistance-type random storage component disclosed by the invention shows excellent high-low resistance state variation characteristic in a voltage continuous scanning mode, has stable variable voltage of high-low resistance state and excellent maintaining characteristic and continuous cycle reading and writing capacity. The excellent characteristics show that theresistance-type storage component has potential application value in the technical field of nonvolatile memory.

Description

technical field [0001] The invention relates to the technical field of non-volatile memory, in particular to a NiFe-based 2 o 4 A non-volatile storage element with thin-film resistive random storage characteristics and a preparation method thereof. Background technique [0002] At present, with the improvement of the process integration of electronic devices, the shortcomings of Flash memory (flash memory), such as high operating voltage, slow writing speed, and poor endurance, which are close to the physical limit of the device, are becoming more and more obvious. At the same time, new types of non-volatile memories are attracting more and more attention from the scientific and industrial circles. Resistive random access memory is a new type of non-volatile memory, which has the advantages of simple structure, non-destructive reading, fast reading and writing speed, high storage density, low power consumption, long retention time, good compatibility with semiconductor tec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
Inventor 包定华胡伟秦霓
Owner SUN YAT SEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap