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Ferroelectric resistive random access memory and adjustment and control method of switching ratio of ferroelectric resistive random access memory

A technology of ferrous resistance variable and memory, applied in electrical components and other directions, can solve problems such as unfavorable practical application, complex device preparation process, misoperation, etc., and achieve the effect that is beneficial to practicality

Inactive Publication Date: 2018-01-23
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current literature shows that the switching ratio of many ferro-resistive devices is still relatively small, so it is easy to cause misoperation
Moreover, the preparation process of the whole device is complicated, which is not conducive to practical application.

Method used

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  • Ferroelectric resistive random access memory and adjustment and control method of switching ratio of ferroelectric resistive random access memory
  • Ferroelectric resistive random access memory and adjustment and control method of switching ratio of ferroelectric resistive random access memory
  • Ferroelectric resistive random access memory and adjustment and control method of switching ratio of ferroelectric resistive random access memory

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Embodiment 1 (lead zirconate titanate ferroelectric film thickness is 150nm)

[0027] Step 1: Prepare the solution

[0028] Use deionized water, glacial acetic acid, and isopropanol as solvents. Using lead acetate, zirconium n-propoxide and titanium isopropoxide as solute, according to the Pb:Ti:Zr molar ratio of 5:3:2, weigh lead acetate, zirconium n-propoxide and titanium isopropoxide. Add deionized water, glacial acetic acid and isopropanol respectively at a concentration standard of 0.4M, and then stir at room temperature until the lead acetate, zirconium n-propoxide and titanium isopropoxide are all dissolved to obtain a light yellow transparent solution.

[0029] Step 2: Preparation of film material

[0030] (1) 0.7wt.% Nb-SrTiO 3 The strontium niobium titanate substrate was ultrasonically cleaned in acetone for 20 minutes, and then the strontium niobium titanate substrate was heated in an electric furnace to 1000°C for 120 minutes and then taken out;

[0031]...

Embodiment 2

[0035] Embodiment 2 (lead zirconate titanate ferroelectric film thickness is 100nm)

[0036] Step 1: Prepare the solution

[0037] Use deionized water, glacial acetic acid, and isopropanol as solvents. Using lead acetate, zirconium n-propoxide and titanium isopropoxide as solute, according to the Pb:Ti:Zr molar ratio of 5:3:2, weigh lead acetate, zirconium n-propoxide and titanium isopropoxide. Add deionized water, glacial acetic acid and isopropanol respectively at a concentration standard of 0.4M, and then stir at room temperature until the lead acetate, zirconium n-propoxide and titanium isopropoxide are all dissolved to obtain a light yellow transparent solution.

[0038] Step 2: Preparation of film material

[0039] (1) 0.7wt.% Nb-SrTiO 3 The strontium niobium titanate sheet was cleaned ultrasonically in acetone for 20 minutes, and then the strontium niobium titanate substrate was heated in an electric furnace to 1000°C for 120 minutes and then taken out;

[0040] (2)...

Embodiment 3

[0044] Embodiment 3 (lead zirconate titanate ferroelectric film thickness is 450nm)

[0045] Step 1: Prepare the solution

[0046] Use deionized water, glacial acetic acid, and isopropanol as solvents. Using lead acetate, zirconium n-propoxide and titanium isopropoxide as solute, according to the Pb:Ti:Zr molar ratio of 5:3:2, weigh lead acetate, zirconium n-propoxide and titanium isopropoxide. Add deionized water, glacial acetic acid and isopropanol respectively at a concentration standard of 0.4M, and then stir at room temperature until the lead acetate, zirconium n-propoxide and titanium isopropoxide are all dissolved to obtain a light yellow transparent solution.

[0047] Step 2: Preparation of film material

[0048] (1) 0.7wt.% Nb-SrTiO 3 The strontium niobium titanate substrate was ultrasonically cleaned in acetone for 20 minutes, and then the strontium niobium titanate substrate was heated to 1000°C in an electric furnace and kept for 120 minutes before taking it out...

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Abstract

The invention provides a gold / lead zirconate titanate / niobium-doped strontium titanate ferroelectric resistive random access memory and an adjustment and control method of the switching ratio of the ferroelectric resistive random access memory. The ferroelectric resistive random access memory is composed of an upper electrode gold material, a bottom electrode and substrate niobium-doped strontiumtitanate material and a lead zirconate titanate ferroelectric material. According to the preparation method of the memory, a lead zirconate titanate thin film is deposited on a niobium-doped strontiumtitanate substrate through using a chemical solution deposition method; gold is deposited on the lead zirconate titanate thin film by using a sputtering method, so that an upper electrode can be formed. The thickness of the lead zirconate titanate ferroelectric material ranges from 100 to 450 nm; the switching ratio of the gold / lead zirconate titanate / niobium-doped strontium titanate ferroelectric resistive random access memory can vary from 17 to 846 through adjusting and controlling the thickness of the lead zirconate titanate ferroelectric material, and is improved by 50 times. With the method adopted, the switching ratio of the ferroelectric resistive random access memory can be effectively adjusted and controlled. The method has the advantages of simplicity, high feasibility and convenience in practical application.

Description

technical field [0001] The invention belongs to the fields of memory materials, information functional materials and intelligent materials, and in particular relates to a method for regulating and controlling gold / lead zirconate titanate / strontium niobate-doped iron titanate resistance variable memory and its switching ratio. Background technique [0002] At present, memory represented by silicon-based flash memory is the most important non-volatile memory device. However, it has problems such as slow read and write speed, poor retention and inevitable size effect. Therefore, the development of a new type of non-volatile memory with superior performance has attracted extensive attention of researchers. Among them, resistive variable memory is considered to be one of the most promising new types of memory. Under the action of an electric field, the resistance value of the RRAM can be switched between high and low resistance states, corresponding to 0 and 1 in data storage. ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 王占杰白宇
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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