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Ultraviolet light assistant preparation method for ferro-electricity film of ferro-electric memory

A technology of ferroelectric memory and ferroelectric thin film, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of device function failure, reduce memory density, etc., and achieve good crystallization performance, small leakage current, and dense surface uniform effect

Inactive Publication Date: 2009-05-20
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, high-temperature processing and barrier layers will reduce memory density and even cause device function failure, which limits compatibility with traditional Si semiconductor processes.

Method used

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  • Ultraviolet light assistant preparation method for ferro-electricity film of ferro-electric memory
  • Ultraviolet light assistant preparation method for ferro-electricity film of ferro-electric memory
  • Ultraviolet light assistant preparation method for ferro-electricity film of ferro-electric memory

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preparation example Construction

[0025] The preferred preparation process of the precursor solution is:

[0026] ① Bake lead acetate trihydrate at 100-120°C to remove the crystal water, then dissolve it in ethylene glycol methyl ether, stir and dissolve fully under the heating condition of 70-80°C;

[0027] ② Dissolve zirconium nitrate pentahydrate in formamide, add ethylene glycol methyl ether, stir and dissolve fully under the heating condition of 70-80°C;

[0028] ③Dissolve tetra-n-butyl titanate in acetylacetone, stir and fully dissolve;

[0029] ④ Pour the solution obtained in step ② and step ③ into the solution obtained in step ①, add glacial acetic acid, stir and mix well;

[0030] ⑤Filter the solution obtained in step ④, and add an appropriate amount of ethylene glycol methyl ether to fix the solution, and obtain a golden yellow concentration of 0.1~0.3mol / l Pb 1.06-1.1 Zr 0.3 Ti 0.7 o 3 Precursor solution;

Embodiment 1

[0033] 1) Preparation of Pt / TiO 2 / SiO 2 / Si substrate

[0034] The specific method is:

[0035] 1.1) Surface-treating and cleaning the (100)-oriented p-type silicon substrate p-Si(100) according to a standard semiconductor cleaning process;

[0036] 1.2) using a thermal oxidation method to grow a 150nm thick silicon dioxide barrier layer on the surface of the silicon substrate;

[0037] 1.3) Prepare a 20nm-thick titanium dioxide bonding layer on the silicon dioxide barrier layer by magnetron sputtering. The process conditions of the magnetron sputtering are: sputtering pressure 1.5Pa, sputtering substrate temperature 200°C, sputtering The atmosphere is O 2 : Ar=1:9;

[0038] 1.4) A 150nm-thick electrode metal layer Pt was prepared on the titanium dioxide bonding layer by magnetron sputtering. The process conditions of the magnetron sputtering were: sputtering pressure 1Pa, sputtering substrate temperature 200°C, sputtering atmosphere: Ar gas.

[0039] 2) adopt the foll...

Embodiment 2

[0066] 1) Preparation of Pt / TiO 2 / SiO 2 / Si substrate

[0067] The specific method is:

[0068] 1.1) Surface-treating and cleaning the (100)-oriented p-type silicon substrate p-Si(100) according to a standard semiconductor cleaning process;

[0069] 1.2) using a thermal oxidation method to grow a 150nm thick silicon dioxide barrier layer on the surface of the silicon substrate;

[0070] 1.3) Prepare a 20nm-thick titanium dioxide bonding layer on the silicon dioxide barrier layer by magnetron sputtering. The process conditions of the magnetron sputtering are: sputtering pressure 1.5Pa, sputtering substrate temperature 200°C, sputtering The atmosphere is O 2 : Ar=1:9;

[0071] 1.4) A 150nm-thick electrode metal layer Pt was prepared on the titanium dioxide bonding layer by magnetron sputtering. The process conditions of the magnetron sputtering were: sputtering pressure 1Pa, sputtering substrate temperature 200°C, sputtering atmosphere: Ar gas.

[0072] 2) adopt the foll...

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Abstract

The invention discloses an ultraviolet light assistant preparation method for a ferroelectric film for a ferroelectric memory, and belongs to the field of microelectronic information functional materials and devices. The concentration of PZT precursor solution for the ferroelectric memory is 0.1-0.3 mo1 / 1. The method comprises: after glue evening of each rotation, a film is baked and radiated by even ultraviolet light, the intensity of illumination is between 10 and 15 mW / cm<2>; then the film is subjected to pyrolysis treatment; and finally the PZT film is subjected to annealed treatment at a temperature of between 550 and 600 DEG C. The PZT ferroelectric film for the ferroelectric memory is a polycrystalline film, has the characteristics of good ferroelectric performance, fatigue endurance and current leakage resistance, has the advantage of low crystallization temperature, and can be compatible with the prior Si semiconductor process.

Description

technical field [0001] The invention belongs to the field of microelectronic information functional materials and devices, and relates to an ultraviolet-assisted low-temperature Sol-Gel (sol-gel) preparation method of a ferroelectric thin film for a ferroelectric memory. Background technique [0002] Ferroelectric thin film material is an important thin film material for information storage. It has spontaneous polarization, and the orientation of spontaneous polarization can change with the change of the applied electric field. The thickness is tens of nanometers to several microns, which is especially suitable for non-volatile The application of ferroelectric memory (FeRAM) has broad application prospects and huge economic benefits. At present, the most concerned memory material is Pb(Zr,Ti)O 3 (PZT) ferroelectric thin film material. [0003] However, an annealing temperature of 650-700° C. is required to prepare a PZT (lead zirconate titanate) thin film. The current pra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/316H01L21/8247
Inventor 于军李建军王耘波周文利高俊雄闻心怡吴云翼周光惺
Owner HUAZHONG UNIV OF SCI & TECH
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