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Preparation method of lanthanum nickelate conductive film by chemical solution deposition

A technology of chemical solution deposition and conductive thin film, which is applied to the direction of conductive layer on the insulating carrier, which can solve the problem of the gap in the conductivity of the thin film

Active Publication Date: 2014-06-04
高俊萍
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, compared with in-situ deposition processes such as PLD, MS, and MOCVD, the conductivity of the film prepared by the CSD method of ex-situ deposition often has a certain gap.

Method used

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  • Preparation method of lanthanum nickelate conductive film by chemical solution deposition
  • Preparation method of lanthanum nickelate conductive film by chemical solution deposition
  • Preparation method of lanthanum nickelate conductive film by chemical solution deposition

Examples

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Effect test

Embodiment 1

[0022] A kind of chemical solution deposition preparation method of lanthanum nickelate conductive thin film, its steps are as follows:

[0023] 1) Using nickel acetate as raw material, nickel acetate was dissolved in ethylene glycol methyl ether, and acrylic acid was added as complexing agent to prepare Ni solution. After stirring the Ni solution for 1.5 hours to obtain a clear solution, add lanthanum nitrate powder and continue stirring until it becomes clear to obtain LaNiO 3 sol, the LaNiO 3 The molar ratio of nickel acetate, lanthanum nitrate, acrylic acid and ethylene glycol methyl ether in the sol is 1: 1.3: 2:30.

[0024] 2) LaNiO prepared in step 1) 3 Sol, prepared LaNiO on LAO single crystal substrate by dip-pulling method 3 gel film, which will subsequently be covered with LaNiO 3 The substrate of the gel film was dried at 150 °C for 10 min to make the LaNiO 3 The gel film dries to form LaNiO 3 Gel dry film.

[0025] 3) The obtained step 2) with LaNiO 3 The ...

Embodiment 2

[0032] A kind of chemical solution deposition preparation method of lanthanum nickelate conductive thin film, its steps are as follows:

[0033] 1) Using nickel acetate as raw material, dissolve nickel acetate in ethylene glycol methyl ether, add acrylic acid as a complexing agent to prepare Ni solution, stir Ni solution for 3 hours to obtain a clear solution, add lanthanum nitrate powder, and continue stirring clarification, LaNiO can be obtained 3 Sol, the molar ratio of nickel acetate, lanthanum nitrate, acrylic acid, and ethylene glycol methyl ether in the sol is 1:1.3:2:40.

[0034] 2) LaNiO prepared in step 1) 3 Sol, LaNiO prepared on Si single crystal substrates by spin-coating 3 gel film, which will subsequently be covered with LaNiO 3 The substrate of the gel film was dried at 100 °C for 10 min to make the LaNiO 3 The gel film dries to form LaNiO 3 Gel dry film.

[0035] 3) The obtained step 2) with LaNiO 3 The Si substrate of the gel dry film is tra...

Embodiment 3

[0042] A kind of chemical solution deposition preparation method of lanthanum nickelate conductive thin film, its steps are as follows:

[0043] 1) Using nickel acetate as raw material, nickel acetate was dissolved in ethanol, and propionic acid was added as complexing agent to prepare Ni solution. After stirring the Ni solution for 1 hour to obtain a clear solution, add lanthanum nitrate powder and continue stirring to clarify, and then LaNiO can be obtained. 3 Sol, the molar ratio of nickel acetate, lanthanum nitrate, propionic acid, and ethanol in the sol is 1:1.2:2:40.

[0044] 2) LaNiO prepared in step 1) 3 Sol, LaNiO prepared on LAO single crystal substrates by spin-coating 3 gel film, which will subsequently be covered with LaNiO 3 The substrate of the gel film was dried at 120 °C for 10 min to make LaNiO 3 The gel film dries to form LaNiO 3 Gel dry film.

[0045] 3) The obtained step 2) with LaNiO 3 The LAO single crystal substrate of the gel dry film ...

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Abstract

The invention relates to a preparation method of a lanthanum nickelate conductive film by chemical solution deposition, belonging to the technical field of microelectronic manufacture. The step mainly includes the preparation of LaNiO3 sol, comprising: preparing a LaNiO3 gel film on a substrate by using a dipping Czochralski method or a spin-coating method, then drying the gel film to form a LaNiO3 gel dry film; transferring the substrate coated with the LaNiO3 gel dry film to a quartz tube heating furnace, performing thermolysis in a mixed atmosphere of H2O and O2; finally putting the thermolyzed gel dry film and the substrate into a quartz tube sintering furnace, performing high temperature calcining in the mixed atmosphere of H2O and O2, so as to form the conductive film on the substrate. The conductive film formed by the method has lower resistivity.

Description

technical field [0001] The present invention relates to the preparation technology of the conductive film used in the field of microelectronic materials and devices, in particular to a kind of lanthanum nickelate LaNiO 3 Preparation method of conductive thin film. Background technique [0002] In terms of microelectronic devices, conductive thin films with certain conductivity have important application prospects. Whether it serves as the bottom electrode for other films, or as a core component for conducting current in a device, or even as a dedicated heater for some components, a film with suitable conductivity plays a key role. Among these conductive films, inorganic films and metal films are the main ones. Metal film has excellent resistivity, but it is easy to be oxidized, which affects the life of the device; although the resistivity of inorganic film is not as good as that of metal film, it has good thermal stability because of its corrosion resistance, high tempera...

Claims

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Application Information

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IPC IPC(8): C04B41/50H01B5/14
Inventor 高俊萍
Owner 高俊萍
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