2results about How to "Control growth rate" patented technology

The present application belongs to the technical field of food baking, and provides a mousse cake layering forming method, comprising: activating the upper surface of the Nth layer of mousse layer which has been solidified, removing the surface condensate frost and forming micro roughness; adjusting the temperature of the N+1th layer of mousse paste to be filled to be within ±3℃ of the surface temperature of the Nth layer of mousse layer; using a low shear force mode, filling the N+1th layer of mousse paste after temperature adjustment into the Nth layer of mousse layer along the inner wall of the mold or through a flow guide device to obtain a multi-layer mousse assembly; precooling the multi-layer mousse assembly at 4-8℃ for 10-20min, and then freezing and shaping at 18-25℃.

The application provides a silicon-doped titanium lithium ion sieve and a preparation method and application thereof, and particularly relates to the technical field of ion sieve preparation. 1‑x Si x O3; wherein 0 The silicon-doped titanium lithium ion sieve provided by the application introduces silicon elements in the crystal structure, uses the high-electronegativity tetravalent silicon atoms to replace a small part of low-electronegativity tetravalent titanium atoms, breaks the regularity of rapid formation of titanium-oxygen bonds and rapid growth of [TiO6] octahedrons on one hand, controls the crystal growth speed, perfects the crystal defects at high temperature, and obtains a small-particle-size titanium lithium ion sieve precursor beta-Li2TiO3 at high temperature, and uses the higher stability of Si-O bonds than Ti-O bonds, so that the synthesized lithium ion sieve has higher acid resistance and lower titanium dissolution loss rate.