Method and device for growing potassium dihydrogen phosphate single crystal

A growth method and a growth device technology, which are applied in the field of growth devices for potassium dihydrogen phosphate crystals, can solve the problems of harsh conditions, poor crystal quality, high cost and the like, and achieve stable quality, fast crystal growth and cost investment. reduced effect

Inactive Publication Date: 2010-03-31
NINGBO UNIV
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Problems solved by technology

But the conditions are harsh, the equipment is complicated, the cost is high, and the quality of the crystal is also poor

Method used

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  • Method and device for growing potassium dihydrogen phosphate single crystal

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Embodiment Construction

[0022] Realize the specific embodiment of the present invention Preferred scheme 1: the growth of KDP crystal

[0023] Optically pure KDP solution was prepared by using high-purity raw materials, about 2 kg of fast-shaped crystals were crystallized, and 10000 mL of optically pure KDP solution was prepared. The saturation point of the solution was determined to be about 60°C by hanging crystal method. Filter and purify the solution with 0.15 μm filter paper. Bind 60×60×2mm on the crystal carrier 3 KDP crystals were used as seeds.

[0024] The interlayer between the insulation lower layer and the growth cylinder is filled with distilled water. The growth chamber in the growth tank is filled with KDP solution with a saturation point of about 60°C, and the volume is 10000ml. Heat the water bath to 75°C, overheat for about 12 hours, put 2 kg of KDP crystal raw material in the dissolution chamber at a temperature 2°C higher than the saturation point, and put in the seed crystal,...

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Abstract

The invention relates to the field of artificial crystal growth, in particular to a method and a device for growing a novel KDP-type crystal, i.e. a method for growing the crystal by circularly evaporating a solution. The device consists of a container and a temperature control system. The container part comprises a heat insulating trough and a growth cylinder, wherein the heat insulating troughis partitioned into an upper part and a lower part which by a partition board in the middle. The lower part is filled with distilled water, is used for water bath and heat insulation and is a high-temperature region, and the upper part is heat-insulated by using the air bath and is a low temperature region. The growth cylinder is also divided into two parts; the upper lid part is a dissolving chamber while the lower part is a growth chamber. The growth chamber is in the water bath of the heat insulating layer. The dissolving chamber is in the air bath of the heat insulating layer. The growthdevice can be used for the growth of crystals of potassium dihydrogen phosphate, potassium dideuterium phosphate, ammonium dihydrogen phosphate and ammonium dideuterium phosphate as well as the same series of KDP-type crystals. The crystal with bigger size can be grown in a relatively small growth cylinder by using the growth device. The invention has the advantages of high growth speed, high crystal quality, simple growth equipment, reduced investment cost and improved economic benefits.

Description

Technical field: [0001] The invention relates to the field of artificial crystals and crystal growth in the technical field of optoelectronic functional materials, in particular to a growing device for potassium dihydrogen phosphate (KDP) crystals. Background technique: [0002] KDP crystals have been discovered and studied for more than half a century. They are electro-optic and nonlinear optical crystals with excellent performance. Good uniformity. Widely used in high-tech fields such as laser tuning and frequency modulation, electro-optic modulation, and acousto-optic modulation. It is an enduring crystal. This type of crystal is a multi-bond crystal dominated by ionic bonds, and is generally grown by a solution method. With the development of laser confinement fusion (ICF), the increase of sub-beams and the improvement of output energy, higher requirements have been put forward for the size, quantity and optical quality of KDP and DKDP crystals used as Q switches and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/14C30B7/04
Inventor 潘建国刘晓利李月宝杨书颖张公军崔玉杰陈素珍
Owner NINGBO UNIV
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