Method for preparing uniform transparent zinc oxide nanorod array film by pulse electrodeposition

Abstract

The invention discloses a method for preparing a uniform transparent zinc oxide nano-rod array membrane by pulse electrodeposition, belonging to the preparation field of nano materials. The method comprises in turn the following steps: analytically pure zinc chloride and potassium chloride are dissolved in distilled water, and are stirred so as to obtain stable transparent solution; the the solution is fed into water bath with the temperature of between 60 and 80 DEG C so as to maintain a constant temperature, and oxygen is continuously fed into the solution; and in a three-electrode system, ITO conductive glass coated with a ZnO nano particle membrane is used as a cathode, while a platinum sheet is used as a counter electrode and a saturated calomel electrode is used as a reference electrode so as to carry out pulse electrodeposition to prepare a ZnO nano-rod array membrane under applied voltage of between 0.8 V below zero and 1.1V below zero with the on-off time ratio ton / toff controlled between 10s / 10s and 1s / 1s. Through adjusting the initial concentration of precursor and controlling factors such as the applied voltage of pulse electrodeposition, on-off time ratio of voltage and pulse frequency, the method prepares the transparent zinc oxide nano-rod array membrane with the diameter less than 50nm and uniform and controllable length, and effectively increases the quality of the membrane. The method has the advantages of simple process, strong controllability and less energy consumption, and can meet the requirements of mass production; moreover, the method has an enormous application prospect in the fields of solar battery, photoelectron, catalysis, and the like.

Description

technical field [0001] The invention belongs to the field of nanometer material preparation, in particular to electrodeposition in aqueous solution to prepare a transparent zinc oxide nanometer film material with a diameter less than 50 nanometers and a uniform and controllable length. Background technique [0002] ZnO is a new type II-VI wide bandgap compound semiconductor material with a hexagonal structure. The bandgap at room temperature is 3.37eV, and the exciton binding energy is as high as 60meV. It has excellent conditions for emitting blue light or near-ultraviolet light. In 2001, Yang et al. used the VLS method (Vapor-Liquid-Solid, VLS) to prepare highly oriented ZnO nanowire arrays and observed photoinduced ultraviolet laser emission at room temperature; in 2005, Konenkamp et al. The performance was further studied, and this achievement made people realize that highly ordered ZnO nanowire / rod arrays have important theoretical significance and application prospects...

AI Technical Summary

Problems solved by technology

[0003] At present, the main problems in the large-area preparation of ZnO nanorod arrays by electrodeposition are: the diameter of the nanorods is relatively large, ranging from hundreds of nanometers, and the diameter of the rods cannot be effectively controlled; in addition, the growth speed of the nanorods is different. As a result, the length of the rods is not equal, and the thickness of the obtained film is not uniform; secondly, impurities are easily introduced during the deposition process, resulting in impure products

The above shortcomings restrict the application of electrodeposition in the development of ZnO nanodevices

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