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System for growth of gallium oxide by means of ultrasound-assisted fog-phase transport chemical vapor deposition

A chemical vapor deposition, ultrasonic-assisted technology, applied in the field of material growth of chemical vapor deposition, to achieve the effect of convenient doping and alloying

Pending Publication Date: 2018-12-21
NANJING UNIV
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Problems solved by technology

[0005] The purpose of the present invention is to solve the problem that the existing thin film growth technology is used to grow gallium oxide in multiple crystal phases, and propose a simple, quick and cheap way to realize the epitaxial growth of gallium oxide thin films in multiple crystal phases

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  • System for growth of gallium oxide by means of ultrasound-assisted fog-phase transport chemical vapor deposition

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Experimental program
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Effect test

Embodiment 1

[0021] Example 1: Epitaxial gallium oxide on sapphire

[0022] 1. Substrate cleaning, etching and annealing.

[0023] 2. Select a quartz holder with a suitable thickness, place the substrate horizontally on the quartz holder, put the quartz holder into the airflow constriction device, and then put the airflow constriction device into the growth chamber so that the substrate is located close to the growth chamber. The position of the front end of the cavity.

[0024] 3. Set the growth temperature to 600°C. When the temperature in the growth chamber reaches the set temperature, turn on the ultrasonic atomizer, and the solution added therein is 0.05mol / L gallium acetylacetonate solution. At the same time, open the dilution gas, the gas is oxygen, and the flow rate is 100 sccm. After the growth chamber was kept warm for 5 minutes, the carrier gas was turned on to start growth. The carrier gas was nitrogen, the flow rate was 700 sccm, the peristaltic pump was turned on, and the p...

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Abstract

The invention relates to a system for growth of gallium oxide by means of ultrasound-assisted fog-phase transport chemical vapor deposition. An ultrasound-assisted fog-phase transport chemical vapor deposition method adopts a water-soluble gallium salt ultrasonic atomization source as a raw material and is performed in a reaction chamber; the part, having gas flow, of a confinement device portionin the reaction chamber is used as a growth region, and the whole reaction chamber is used as a horizontal structure; after being atomized by using an ultrasonic atomizer, an aqueous solution of a gallium source is transported by using inert gas (nitrogen gas) as carrier gas, is mixed with dilution gas and then enters the reaction chamber; the reaction chamber is internally provided with a gas flow confinement structure; reaction products and unreacted raw materials are absorbed with water at an output position of the rear end of the reaction chamber, and an anti-inverse-suction structure is arranged at the output position; after a reaction is finished, the exhaust gas is treated by means of an exhaust gas treatment device.

Description

technical field [0001] The invention relates to a material growth method of chemical vapor deposition, in particular to a method of chemical epitaxial gallium oxide thin film. Background technique [0002] Gallium oxide, as a new type of wide-bandgap semiconductor material, has received more and more attention in recent years. Gallium oxide has a large band gap (4.5-5eV), high breakdown field strength (8MV / cm), high Barley figure of merit (3444) and excellent physical and chemical stability, in high-power semiconductor devices, deep ultraviolet luminescence It has excellent application prospects in the field of detection and detection devices. [0003] There are currently five known crystal phases of gallium oxide: α, β, γ, δ, and ε. Among them, the β phase is the most thermodynamically stable crystal phase, so the growth is relatively easy and the research is the most extensive. However, the two crystal phases α and ε have their own advantages in physical properties comp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B25/02C23C16/40
CPCC23C16/40C30B25/02C30B29/16
Inventor 叶建东马同川陈选虎徐阳任芳芳朱顺明顾书林
Owner NANJING UNIV
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