The application provides a preparation method of a
phase change storage material titanium-
antimony-
tellurium target material, and belongs to the field of microelectronic technology. The application adopts a segmented heat treatment process of high first and low later, ensures that
titanium and
antimony and
titanium and
tellurium are synthesized into titanium
antimonide and titanium
telluride respectively, and titanium
antimonide and titanium
telluride have better compatibility compared with
metal titanium and
antimony telluride, long time insulation during synthesis ensures complete reaction, titanium can be uniformly distributed in the
grain boundary of
antimony telluride after the target material is prepared, and then low-temperature vacuum hot-pressing
sintering is adopted to prevent target material
grain growth caused by high temperature, and long
time pressure keeping is adopted to ensure that the phase is more uniform, the
phase change storage material titanium-antimony-
tellurium target material with high purity,
low oxygen content and
relative density greater than or equal to 95% is obtained, the quality index is better, and therefore the thin film deposition efficiency and performance can be improved.