56 results about "Antimony telluride" patented technology

The invention relates to an antimony (Sb)-tellurium (Te)-titanium (Ti) phase-transition film material capable of being used for a phase-transition memory and a preparation method thereof. The novel Sb-Te-Ti phase-transition storage material is formed by doping Ti on the basis of a Sb-Te phase-transition material, the doped Ti is bonded with both the Sb and the Te, a chemical formula of the novel phase-transition material is SbxTeyTi100-x-y, wherein x is more than zero and less than 80, and y is more than zero and less than 100 minus x. When the novel phase-transition storage material is a Ti-Sb2Te3 phase-transition storage material, Ti atoms substitute the positions of Sb atoms, and no phase is split. The present Sb-Te phase-transition material crystallization process is led by the grain growth, so that the phase transition rate is fast, but the maintaining force cannot meet the industrial requirements. The crystallization temperature of the novel Sb-Te-Ti phase-transition storage material is greatly improved, the maintaining force is enhanced, and the thermal stability is enhanced; at the same time, amorphous resistance is reduced, and the crystalline resistance is increased; and the novel Sb-Te-Ti phase-transition storage material can be widely applied to the phase-transition memory.

High efficiency conversion of heat energy to electrical energy is achieved using a ring of metallic components and anodically sliced, reduced barriers, high purity n-type and p-type semiconductor wafers. Energy produced by heating one set of fins and cooling another set is extracted from a ring of bismuth telluride based n-type wafers and antimony telluride based p-type wafers using make-before-break control of MOSfet switch banks. Standard AC frequencies and DC output result from rectification of make-before-break high frequency switched very high currents in the ring and a DC to AC converter. Solar energy stored in porcelain fragments extends the time that solar energy can be used as the heat source for the thermoelectric generator device.

An apparatus and method perform supersonic cold-spraying to deposit N and P-type thermoelectric semiconductor, and other polycrystalline materials on other materials of varying complex shapes. The process developed has been demonstrated for bismuth and antimony telluride formulations as well as Tetrahedrite type copper sulfosalt materials. Both thick and thin layer thermoelectric semiconductor material is deposited over small or large areas to flat and highly complex shaped surfaces and will therefore help create a far greater application set for thermoelectric generator (TEG) systems. This process when combined with other manufacturing processes allows the total additive manufacturing of complete thermoelectric generator based waste heat recovery systems. The processes also directly apply to both thermoelectric cooler (TEC) systems, thermopile devices, and other polycrystalline functional material applications.

The invention discloses a preparation method of flower-like micro-nano structures of metal tellurides. The preparation method belongs to the technical field of preparation of semiconductor materials.The method comprises the steps of dissolving sodium tellurite, polyvinylpyrrolidone, sodium acetate, ethanediamine and zinc acetylacetonate into ethylene glycol, removing oxygen in an obtained solution in an inert environment, and heating to obtain a precursor; then, respectively adding copper acetylacetonate, bismuth acetylacetonate, cadmium acetylacetonate, lead acetylacetonate and antimony acetylacetonate so as to successfully prepare the flower-like micro-nano structures of copper telluride, bismuth telluride, cadmium telluride, lead telluride and antimony telluride. The diameters of the prepared flower-like micro-nano structures of the copper telluride, the bismuth telluride, the cadmium telluride, the lead telluride and the antimony telluride are 8-10 microns. The method has the advantages of being simple in synthetic process, good in repeatability, safe and environmentally friendly, and cost-saving. Based on the characteristics of the preparation method, the preparation method has a very high value in the aspects of laboratory research and industrial applications.

The invention discloses a method for quickly preparing Sb2Te3 thermoelectric materials, which comprises the following steps: 1) weighing Sb powder and Te powder according to the stoichiometric ratio of each element in Sb2Te3, and then grinding and mixing them evenly to obtain a mixed raw material; 2) taking Step 1) The obtained mixed raw material is subjected to spark plasma activation and sintering to obtain a dense single-phase Sb2Te3 thermoelectric material. The invention has the advantages of fast response speed, high efficiency and energy saving, good repeatability and the like, and has good application prospects.

A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains.