16 results about "Antimony telluride" patented technology

The invention provides a visible and infrared dual-band stealth material and a preparation method thereof. The visible and infrared dual-band stealth material comprises a thermochromic ink layer, a transparent conductive layer, a quartz glass substrate and a phase change material layer which are sequentially arranged, wherein the phase change material layer is arranged in a grid shape; and the material of the phase change material layer is selected from VO2 or sulfur germanium antimony tellurium. The surface phase-change material layer of the stealth material is arranged in a grid shape, the color-changing ink layer at the bottom can be directly seen by naked eyes, camouflage patterns are formed on the color-changing ink layer through printing, and the dynamic visible light camouflage function is achieved; when the top layer VO2 or chalcogenide germanium antimony tellurium is in a phase transformation state, the infrared reflectivity of the top layer VO2 or chalcogenide germanium antimony tellurium becomes high, the emissivity becomes low, and therefore the dynamic infrared camouflage function is achieved. Joule heat can be generated when voltage is applied to the transparent conductive layer, and the heat enables the color of the color-changing ink layer to change, so that the visible light camouflage function can be adapted to various scenes. Visible and infrared dual-band stealth can be achieved, dynamic stealth can also be achieved, and the application requirements of multiple spectrums and multiple scenes are met.

The application discloses a self-powered temperature sensor based on thermoelectric effect and a preparation method and application thereof, and aims to provide a temperature sensor based on high-performance bismuth telluride-based thin film thermoelectric material, which has high sensitivity and strong flexibility, and a preparation method and application thereof in monitoring soil temperature of a greenhouse. The temperature sensor comprises a thermoelectric module, the thermoelectric module comprises a base plate, the base plate is provided with N-type bismuth telluride thin films and P-type antimony telluride thin films which are distributed in a scattering mode, the N-type bismuth telluride thin films and the P-type antimony telluride thin films are arranged at intervals, the N-type bismuth telluride thin films and the P-type antimony telluride thin films are integrated into multiple pairs of P-N junction thermoelectric legs by being connected in series through thin film electrodes, a center hollow hole is arranged on an inner ring formed by the thin film electrodes on the base plate, the hollow position at the center hollow hole and the thin film electrodes of the inner ring are encapsulated by high-thermal-conductivity material, and a thermal-conductivity encapsulation layer is formed in a middle region. The sensor has high sensitivity, strong flexibility and the ability of accurate monitoring.

Freestanding, composite anodes include biphasic Li-Mg-X ternary alloys. The composite anodes feature improved Li-ion transport and reduced dendrite formation. Biphasic Li-Mg-X ternary alloyed anodes may be paired with iron phosphate-containing cathodes. The Li may be present in an amount from about 10 wt% to about 90 wt%. The Mg may be present in an amount from about 5 wt% to about 50 wt%. Ternary alloy component(s) may include calcium (Ca), gallium (Ga), boron (B), tin (Sn), aluminum (Al), indium (In), bismuth (Bi), antimony (Sb), tellurium (Te), carbon (C), silicon (Si), bismuth telluride (BiTe), antimony telluride (SbTe), zinc (Zn), etc., in amounts from about 1 wt% to about 90 wt%. The anodes may include lithium-ion conducting material(s): bismuth telluride (BiTe), antimony telluride (SbTe), lithium-doped tritelluride (LiTe3), lithium titanate (Li4Ti5O12, "LTO"), lithium lanthanum zirconium oxide (Li7La3Zr2O12, "LLZO"), lithium phosphide (Li3P), molybdenum oxide (MoO), molybdenum disulfide (MoS2).

The application discloses a bismuth telluride p-n segmented thermoelectric wire and a preparation method and application thereof. The bismuth telluride p-n segmented thermoelectric wire comprises a p-type thermoelectric section, an n-type thermoelectric section and a carbon nanotube yarn, the carbon nanotube yarn is located between the p-type thermoelectric section and the n-type thermoelectric section, the p-type thermoelectric section comprises antimony telluride and p-type bismuth telluride, the shape of the p-type thermoelectric section is a cuboid, the length is 2-10 mm, the width is 0.2-5 mm, and the height is 0.2-5 mm, the n-type thermoelectric section comprises antimony telluride and n-type bismuth telluride, the shape of the n-type thermoelectric section is a cuboid, the length is 2-10 mm, the width is 0.2-5 mm, and the height is 0.2-5 mm. The bismuth telluride p-n segmented thermoelectric wire has high thermoelectric performance and high flexibility.

The present invention relates to a method for enhancing the high-temperature stability of a thermoelectric semiconductor device. The thermoelectric semiconductor device comprises: two copper substrates, and a plurality of thermoelectric arms whose ends are interconnected by welding to the two copper substrates in a one-to-one correspondence. The thermoelectric arms are made of antimony telluride, and both ends of the thermoelectric arms have nickel plates that facilitate welding. Sn paste is printed on the copper substrates using a printing screen, and the amount of Sn paste between the copper substrates and the thermoelectric arms is controlled. The thermoelectric arms and the copper substrates are assembled to form a thermoelectric semiconductor assembly. The thermoelectric semiconductor assembly is heated in a vacuum state with low welding pressure to achieve welding interconnection. No Sn bridges are generated between the thermoelectric arms of the manufactured thermoelectric semiconductor device. When the device operates in a high-temperature environment for a long time, element diffusion is unlikely to occur at the welding interface, and Cu elements in the copper substrates will not diffuse into the thermoelectric arms, thereby enhancing high-temperature stability.

The application discloses a bismuth telluride / antimony telluride heterojunction anode catalyst for a lithium air battery and a preparation method thereof, and belongs to the technical field of lithium air batteries. The bismuth telluride / antimony telluride heterojunction anode catalyst for the lithium air battery comprises bismuth telluride / antimony telluride nanosheets, the bismuth telluride / antimony telluride nanosheets are formed by epitaxial growth of antimony telluride on the surface of bismuth telluride to form a lateral heterojunction, and when the bismuth telluride / antimony telluride nanosheets are used as an anode catalyst of a lithium air battery, the specific capacity of the battery can be improved, the overpotential can be reduced, and the cycle stability can be improved; even in an air environment, the first discharge capacity of the lithium air battery can reach more than 8000 mAh / g at 500 mA / g, and the lithium air battery can be cycled more than 350 times at a high current density of 1000 mA / g and a cut-off capacity of 500 mAh / g, and excellent cycle performance is maintained.

The invention discloses a bismuth telluride / antimony telluride heterojunction positive electrode catalyst for a lithium air battery, a preparation method of the bismuth telluride / antimony telluride heterojunction positive electrode catalyst and the lithium air battery, and belongs to the technical field of lithium air batteries. The bismuth telluride / antimony telluride heterojunction positive electrode catalyst for the lithium air battery comprises a bismuth telluride / antimony telluride nanosheet, the bismuth telluride / antimony telluride nanosheet is obtained by forming a transverse heterojunction through epitaxial growth of antimony telluride on the surface of bismuth telluride, and when the bismuth telluride / antimony telluride heterojunction positive electrode catalyst serves as the positive electrode catalyst of the lithium air battery, the specific capacity of the battery can be improved; compared with the prior art, the lithium-air battery prepared by the preparation method has the advantages that the lithium-air battery prepared by the preparation method disclosed by the invention has the advantages that the overpotential is reduced, the cycling stability is improved, the first discharge capacity of the lithium-air battery at 500mA / g can still reach 8000mAh / g or above even in an air environment, meanwhile, the lithium-air battery can be circulated for 350 circles or above under the high current density of 1000mA / g and the cut-off capacity of 500mAh / g, and the excellent cycling performance is kept.

The application discloses a low-loss hetero-junction semiconductor material based on antimony tellurium compound and preparation and application thereof, and relates to the following steps: irradiating a stable hexagonal phase Sb2Te3 crystal sample with a high-energy particle beam, so that the bulk phase inside the sample is converted into a cubic phase, and the hexagonal phase structure of a region from the surface to the inside of the sample to 10 nm is kept unchanged; the stable hexagonal phase Sb2Te3 bulk phase inside structure is converted into a cubic phase; and the Anderson insulating property of the bulk phase inside makes the charges be subjected to Anderson localization, and the charges are converted into an insulating state. The application converts the bulk phase inside of the topological insulator hexagonal phase Sb2Te3 crystal into a cubic phase by irradiating the bulk phase inside with a high-energy particle beam, forms charge Anderson localization in the bulk phase, converts the bulk phase into an insulating state, keeps the hexagonal phase topological insulating property in the range from the surface to the inside of the sample to 10 nm, can inhibit the electric transport performance of the bulk phase inside, drives the current to pass through only the surface, thereby reducing the transport loss, and realizes super-low power consumption transport.

The present disclosure provides a composition comprising a sodium matrix and antimony telluride particles distributed throughout, configured to facilitate sodium stripping from a bulk portion during electrochemical cycling. The antimony telluride particles may comprise Sb2Te3 and have an average particle size of less than 10 pm. The composition facilitates sodium replating into areas where pores have formed during stripping and enhances interfacial stability with a NASICON solid electrolyte. Also provided is a solid-state battery comprising a solid electrolyte and an electrode comprising the sodium matrix and antimony telluride particles, wherein the electrode maintains interfacial stability with the solid electrolyte during electrochemical cycling by facilitating sodium stripping from a bulk portion.

The application discloses a preparation method of ternary Sb2(Se 1‑x Te x )3 two-dimensional nanosheets and belongs to the technical field of semiconductor nanomaterial preparation. The application utilizes a chemical vapor deposition method, takes antimony telluride powder and elemental selenium powder as an evaporation source, takes argon as a deposition reaction atmosphere, and obtains high-quality Sb2(Se 1‑x Te x )3 two-dimensional nanosheets with adjustable composition by adjusting the proportion, position and reaction temperature of a growth source. The method has simple process and low requirement on equipment, and the prepared Sb2(Se 1‑x Te x )3 two-dimensional nanosheets have adjustable composition and have high research value and application prospect in the field of nano-optoelectronic devices.

The invention provides an antimony telluride-based thermoelectric material, a thermoelectric module and a preparation method and application thereof, and relates to the technical field of thermoelectric materials. The antimony telluride-based thermoelectric material is a P-type homogeneous double-section thermoelectric material, can greatly reduce high-temperature-low-temperature interface contact resistance, low thermal expansion coefficient difference and low interface element diffusion caused by the same structure, and overcomes the problem of poor stability caused by mismatching of thermal expansion coefficients of different thermoelectric materials; through the co-doping of Cd and S, the band gap of the thermoelectric material in a high-temperature section (more than 500K) is expanded, the introduction of high-density twin boundaries and dislocation is promoted, the bipolar effect is inhibited, the thermoelectric conversion efficiency and mechanical strength of the thermoelectric material are improved, and the prepared antimony telluride-based thermoelectric material has excellent mechanical properties and thermoelectric properties.

The application provides a preparation method of a phase change storage material titanium-antimony-tellurium target material, and belongs to the field of microelectronic technology. The application adopts a segmented heat treatment process of high first and low later, ensures that titanium and antimony and titanium and tellurium are synthesized into titanium antimonide and titanium telluride respectively, and titanium antimonide and titanium telluride have better compatibility compared with metal titanium and antimony telluride, long time insulation during synthesis ensures complete reaction, titanium can be uniformly distributed in the grain boundary of antimony telluride after the target material is prepared, and then low-temperature vacuum hot-pressing sintering is adopted to prevent target material grain growth caused by high temperature, and long time pressure keeping is adopted to ensure that the phase is more uniform, the phase change storage material titanium-antimony-tellurium target material with high purity, low oxygen content and relative density greater than or equal to 95% is obtained, the quality index is better, and therefore the thin film deposition efficiency and performance can be improved.

The invention discloses an iron-based superconducting heterojunction and a preparation method thereof, and belongs to the field of topological superconducting heterojunctions. The iron-based superconducting heterojunction is of a layered structure and comprises a titanium dioxide buffer layer, an iron-selenium-tellurium superconducting layer and an antimony telluride topological insulating layer which are sequentially grown on the surface of a strontium titanate substrate. The preparation method of the iron-based superconducting heterojunction comprises the following steps: (1) preparing a Sb2Te3 bulk material; (2) preprocessing and loading an STO substrate; (3) enabling the TiO2 buffer layer to grow on the surface of the STO substrate by using a PLD (Pulsed Laser Deposition) process; (4) growing an FST superconducting layer on the surface of the TiO2 buffer layer by using a PLD process; (5) enabling the Sb2Te3 topological insulating layer to grow on the surface of the TiO2 buffer layer by using a PLD (Pulsed Laser Deposition) process; and (6) post-annealing: carrying out post-annealing on the Sb2Te3 bulk material obtained in the step (1) and the precursor obtained in the step (5) to obtain the iron-based superconducting heterojunction. The iron-based superconducting heterojunction provided by the invention can achieve the effects of zero resistance and relatively high temperature.

Exemplary thermoelectric inks may comprise 60-86% by weight (wt%) bismuth antimony telluride (BiSbTe) particles; 7-9 wt% tellurium (Te) particles; and a polar solvent. Exemplary thermoelectric inks may comprise 60-90 wt% bismuth antimony telluride (BiSbTe) particles; 7-9 wt% tellurium (Te) particles; 0.1-5 wt% Xanthan gum; and a polar solvent. Exemplary thermoelectric inks may be used to manufacture thermoelectric composite films.

The invention discloses a phase change polymorphic storage and calculation all-optical waveguide device and array, which comprises a bottom substrate layer and a top optical waveguide layer, the optical waveguide layer comprises a covering protection layer, a phase change material layer, a waveguide dielectric layer and a shallow etching layer, and the covering protection layer and the phase change material layer are integrated above the center of the waveguide dielectric layer. According to the invention, by utilizing the characteristic that the amorphous phase and the crystal phase of the phase-change material indium antimony tellurium have obvious transmissivity difference in an optical communication wave band, the transmissivity of the device is driven to gradually change through a controllable adjustment mode of gradually non-crystallizing an interface, so that multi-logic-state storage of a single device is realized; and the matrix calculation of the silicon-based all-optical waveguide is realized by constructing a silicon optical waveguide device array.

The invention relates to the technical field of thermoelectric materials, and discloses a graphdiyne-doped BiSbTe-based thermoelectric material and a preparation method and application thereof.The preparation method comprises the steps that (Bi, Sb) 2Te3 powder and graphdiyne powder are mixed and sintered, and the graphdiyne-doped BiSbTe-based thermoelectric material is obtained. Benefited from collaborative optimization of electroacoustic transport, the graphdiyne-doped BiSbTe-based thermoelectric material provided by the invention shows thermoelectric performance far superior to that of a contrast sample (an undoped material) in a wide temperature range of 300K to 500K. The thermoelectric figure of merit (ZT value) is obviously improved, the highest ZT value can reach 1.1 or above, and the excellent room-temperature and near-room-temperature thermoelectric conversion efficiency is shown.