Ca-doped antimony telluride ultra-stable phase change storage film material and preparation method thereof

Abstract

The invention discloses a Ca-doped antimony telluride ultra-stable phase change storage film material and a preparation method thereof. The Ca-doped antimony telluride ultra-stable phase change storage film material and the preparation method are characterized in that the phase change storage film material is a mixture of three elements of calcium, antimony and tellurium, and the chemical structural formula of the phase change storage film material is Cax(Sb2Te3)100-x, wherein x is greater than 0 and less than 17.6 at%; and the Cax(Sb2Te3)100-x phase change storage film material is prepared bya magnetron sputtering coating system in a double-target co-sputtering mode. The phase change storage film material has the advantages that a Ca-Sb2Te3 phase change thin film has high crystallizationtemperature, large crystallization activation energy and good ten-year data retention capacity; and the phase change thin film has the high crystallization temperature, the large crystallization activation energy and the good ten-year data retention capacity, and the resistance drift coefficient is low, so that the resistance drift phenomenon of the phase change material in an amorphous state isimproved.

Description

technical field [0001] The invention relates to the technical field of phase-change storage materials, in particular to a Ca-doped antimony telluride ultra-stable phase-change storage film material and a preparation method thereof. Background technique [0002] Information storage plays an important role in human history. The development of today's electronic technology has greatly increased the amount of digital data. According to reports, the global data scale will reach 44 zettabytes (approximately 1 trillion GB) by 2020. The storage, transmission and processing of such a huge data group will consume a lot of resources, and will face severe challenges in the future. In addition, the erasing and writing times of the most popular non-volatile memory flash memory (Flash) and volatile dynamic random access memory (DRAM) differ by nearly 5 orders of magnitude (~105 ns and ~10 ns), which seriously restricts data storage and Transmission efficiency, so a memory revolution is u...

AI Technical Summary

Problems solved by technology

[0004] Existing traditional Ge 2 Sb 2 Te 5 Although (GST) phase change materials have been widely used in advanced chip technologies such as 3D XPoint jointly developed by Intel and Micron in recent years, many of its performance defects still cannot be improved

For example, the amorphous state of GST has poor stability, including low crystallization temperature, low ten-year data retenti...

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