SiO2/Sb superlattice nano phase change thin film material and preparation method and application thereof

A thin-film material and superlattice technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the phase change process of phase change memory with limited operating speed, unable to meet information storage requirements, The problem of high power consumption of RESET achieves excellent data retention ability, shortens crystallization time, and ensures effective resolution

Active Publication Date: 2016-12-07
JIANGSU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Ge 2 Sb 2 Te 5 It is a widely used phase-change memory material at present. Although its performance in all aspects is balanced and there are no major shortcomings, there are still many places to be improved and improved.
First of all, the operating speed of phase change memory is mainly limited by the phase change process of thin film materials, while Ge 2 Sb 2 Te 5 The crystallization mechanism of Ge is mainly based on nucleation, making its phase transition slow, unable to meet the information storage requirements of the future high-speed an

Method used

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  • SiO2/Sb superlattice nano phase change thin film material and preparation method and application thereof
  • SiO2/Sb superlattice nano phase change thin film material and preparation method and application thereof
  • SiO2/Sb superlattice nano phase change thin film material and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0036] Embodiment 1: preparation [SiO 2 (1) / Sb(9)] 5 Superlattice-like nanophase-change thin film materials.

[0037] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities;

[0038] a) Strong ultrasonic cleaning in acetone solution for 3 to 5 minutes, then rinse with deionized water;

[0039] b) Strong ultrasonic cleaning in ethanol solution for 3 to 5 minutes, rinse with deionized water, and dry the surface and back with high-purity nitrogen;

[0040] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0041] 2. Preparation before preparing multi-layer composite film:

[0042] a) Install SiO separately 2 and Sb sputtering target, the atomic percent purity of the target reaches 99.999%, and the background vacuum is evacuated to 1×10 -4 Pa;

[0043] b) Set the sputtering power to 30W;

[0044] c) Using high-purity argon as the sputtering gas, the volume percent purity reaches 99.999%, setting the arg...

Embodiment 2

[0051] Embodiment 2: preparation [SiO 2 (2) / Sb(8)] 5 Superlattice-like nanophase-change thin film materials.

[0052] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities;

[0053] a) Strong ultrasonic cleaning in acetone solution for 3 to 5 minutes, then rinse with deionized water;

[0054] b) Strong ultrasonic cleaning in ethanol solution for 3 to 5 minutes, rinse with deionized water, and dry the surface and back with high-purity nitrogen;

[0055] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0056] 2. Preparation before preparing multi-layer composite film:

[0057] a) Install SiO separately 2 and Sb sputtering target, the atomic percent purity of the target reaches 99.999%, and the background vacuum is evacuated to 1×10 -4 Pa;

[0058] b) Set the sputtering power to 30W;

[0059] c) Using high-purity argon as the sputtering gas, the volume percent purity reaches 99.999%, setting the arg...

Embodiment 3

[0066] Embodiment 3: preparation [SiO 2 (3) / Sb(7)] 5 Superlattice-like nanophase-change thin film materials.

[0067] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities;

[0068] a) Strong ultrasonic cleaning in acetone solution for 3 to 5 minutes, then rinse with deionized water;

[0069] b) Strong ultrasonic cleaning in ethanol solution for 3 to 5 minutes, rinse with deionized water, and dry the surface and back with high-purity nitrogen;

[0070] c) Dry the water vapor in an oven at 120°C for about 20 minutes.

[0071] 2. Preparation before preparing multi-layer composite film:

[0072] a) Install SiO separately 2 and Sb sputtering target, the atomic percent purity of the target reaches 99.999%, and the background vacuum is evacuated to 1×10 -4 Pa;

[0073] b) Set the sputtering power to 30W;

[0074] c) Using high-purity argon as the sputtering gas, the volume percent purity reaches 99.999%, setting the arg...

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Abstract

The invention relates to the technical field of nano materials and relates to a SiO2/Sb superlattice nano phase change thin film material and a preparation method and application thereof. The material comprises a silicon dioxide thin film material and an elemental antimony thin film material. The silicon dioxide thin film material and the elemental antimony thin film material carry out nano-scale alternate superposition through magnetron sputtering. The structural general formula of the material is [SiO2(a)/Sb(b)]x, wherein a indicates the thickness (nm) of a single layer of SiO2 thin film, and a is larger than or equal to 1 and smaller than or equal to 9; b indicates the thickness (nm) of a single layer of Sb thin film, and b is larger than or equal to 1 and smaller than or equal to 8; x indicates the alternate periodicity of the single layer of SiO2 thin film and the single layer of Sb thin film, and x is any positive integer. The SiO2/Sb superlattice nano phase change thin film material has high phase change speed, good heat stability and low operation power consumption, is suitable for preparing high-speed, high-stability and low-power-consumption phase change memorizers, and has wide market prospects.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, in particular to a SiO 2 / Sb-like superlattice nano phase change thin film material and its preparation method and application. Background technique [0002] Phase-Change Random Access Memory (Phase-Change Random Access Memory, abbreviated as PCRAM) utilizes the huge resistance difference between the crystalline state and the amorphous state of the phase-change material to realize information storage. Phase change materials have higher resistivity in the amorphous state and lower resistivity in the crystalline state, and the difference in resistance between the two states can reach more than two orders of magnitude. The rapid transition of phase-change materials between two resistive states can be achieved through current-induced Joule heating. PCRAM has a long cycle life (>10 13 Times), small component size, high storage density, fast reading speed, good stability, anti-vibration, an...

Claims

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Application Information

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IPC IPC(8): B82Y30/00H01L45/00
CPCB82Y30/00H10N70/881H10N70/883H10N70/026
Inventor 朱小芹胡益丰翟良君陈奥陈雅蓉薛建忠邹华孙月梅袁丽吴卫华张建豪
Owner JIANGSU UNIV OF TECH
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