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Single crystal anatase titanium dioxide nano-tube array and preparation method thereof

A technology of nanotube array and titanium dioxide, which is applied in the direction of titanium dioxide, chemical instruments and methods, titanium oxide/hydroxide, etc., can solve the problem that the titanium dioxide nanotube array is not prepared, and achieve good electron transport and strong controllability , The effect of fast electron transmission speed

Inactive Publication Date: 2013-07-31
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

TiO2 nanotube arrays of single crystal anatase have not been fabricated until now

Method used

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  • Single crystal anatase titanium dioxide nano-tube array and preparation method thereof
  • Single crystal anatase titanium dioxide nano-tube array and preparation method thereof
  • Single crystal anatase titanium dioxide nano-tube array and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046](1) TiNbZr alloy is prepared by arc melting method, the molar ratio of each element in the TiNbZr alloy is Ti: Nb: Zr=72: 22: 6;

[0047] (2) Process the TiNbZr alloy into thin slices with a thickness of 1mm, use 360#, 600#, 800#, 1000#, 1200#, 1500# water-grinding paper to mechanically polish the surface in turn, and use distilled water, acetone, ethanol and Distilled water was used as the lotion and ultrasonically cleaned for 10 minutes each, then rinsed in distilled water and dried for later use;

[0048] (3) at 1M H 3 PO 4 And in the electrolytic solution of 0.5wt%NaF, control voltage is 40V, with step (2) gained TiNbZr alloy sheet is anode, high-purity Pt sheet carries out anodic oxidation as cathode, carries out anodic oxidation at room temperature, and oxidation time is 3h, namely Amorphous titanium dioxide nanotube arrays can be obtained on the surface of TiNbZr alloy flakes; the length of the gained amorphous titanium dioxide nanotube arrays is 6mm (such as ...

Embodiment 2

[0056] (1) TiNbZr alloy is prepared by arc melting method, the molar ratio of each element in the TiNbZr alloy is Ti: Nb: Zr=71: 21: 8;

[0057] (2) Process the TiNbZr alloy into thin slices with a thickness of 1.5mm, use 360#, 600#, 800#, 1000#, 1200#, 1500# water-grinding sandpaper to mechanically polish the surface in turn, and use distilled water, acetone, ethanol in turn Ultrasonic cleaning with distilled water for 10 minutes each, followed by rinsing in distilled water and drying for later use;

[0058] (3) at 1M H 3 PO 4 In the electrolyte of 1wt%NaF, the control voltage is 40V, the TiNbZr alloy flake obtained in step (2) is used as the anode, and the high-purity Pt sheet is used as the cathode for anodic oxidation, and the anodic oxidation is carried out at room temperature, and the oxidation time is 3h. Amorphous titania nanotube arrays were obtained on the surface of TiNbZr alloy flakes;

[0059] The length of the amorphous titania nanotube array is about 6 mm, an...

Embodiment 3

[0064] (1) TiNbZr alloy is prepared by arc melting method, and the molar ratio of each element in the TiNbZr alloy is Ti: Nb: Zr=63: 35: 2;

[0065] (2) Process the TiNbZr alloy into thin slices with a thickness of 5mm, use 360#, 600#, 800#, 1000#, 1200#, 1500# water-grinding paper to mechanically polish the surface in turn, and use distilled water, acetone, ethanol and Distilled water was used as the lotion and ultrasonically cleaned for 10 minutes each, then rinsed in distilled water and dried for later use;

[0066] (3) at 5M H 3 PO 4 In the electrolyte solution of 1wt% NaF, the control voltage is 20V, the TiNbZr alloy flake obtained in step (2) is used as the anode, and the high-purity Pt sheet is used as the cathode for anodic oxidation, and the anodic oxidation is carried out at room temperature, and the oxidation time is 3h. Amorphous titania nanotube arrays were obtained on the surface of TiNbZr alloy flakes; Figure 11-a1 It is the top view of the scanning electron...

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Abstract

The present invention discloses a single crystal anatase titanium dioxide nano-tube array and a preparation method thereof. The method comprises: adopting an electrical arc melting method to prepare a TiNbZr alloy; carrying out burnishing, washing and drying on the matrix alloy; adopting the dried matrix alloy as an anode, adopting a Pt sheet as a cathode, and carrying out anode oxidation for 0.5-20 h at a room temperature, wherein a voltage is 10-100 V; placing the prepared nanometer titanium dioxide nano-tube array and the matrix alloy in a muffle furnace to carry out a heat treatment in air; and finally adopting hydrofluoric acid steam to remove an amorphous layer and the matrix alloy to obtain the single crystal anatase titanium dioxide nano-tube array. The single crystal anatase titanium dioxide nano-tube array has good cell compatibility and a visible ultraviolet light absorption performance. The preparation method has characteristics of strong controllability, high efficiency and simple operation.

Description

technical field [0001] The invention relates to a titanium dioxide nanotube, in particular to a method for preparing a single crystal anatase titanium dioxide nanotube array. Background technique [0002] Nanoscale titanium dioxide has good photoelectric, photosensitive, gas sensitive, pressure sensitive, photochromic properties, as well as superior photocatalysis, good biocompatibility and corrosion resistance, making it suitable for photocatalysis, photoelectric conversion, sensors, etc. , solar cells, self-cleaning materials, and biological materials have broad application prospects, and have attracted people's attention, and have become a research hotspot in the world. Compared with other forms of nanostructures (such as nanoparticles, nanowires, etc.), titanium dioxide nanotubes have a large specific surface area and a certain growth direction, which greatly increases the reactive sites and accelerates photoelectron transmission, thereby further improving the performanc...

Claims

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Application Information

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IPC IPC(8): C30B7/12C01G23/047B82Y40/00
Inventor 袁斌徐锦城曾美琴高岩朱敏
Owner SOUTH CHINA UNIV OF TECH
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