Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cadmium telluride thin film solar battery and preparation method thereof

A solar cell, cadmium telluride technology, applied in circuits, photovoltaic power generation, electrical components and other directions, can solve the problems of low performance and low conversion efficiency, and achieve the effects of high conversion efficiency, increase open circuit voltage, and improve defects

Active Publication Date: 2019-05-24
CNBM CHENGDU OPTOELECTRONICS MATERIAL
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved and the technical task proposed by the present invention are to improve the prior art, provide a cadmium telluride thin film solar cell, and solve the problems of low conversion efficiency and low performance of the cadmium telluride thin film solar cell in the current technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cadmium telluride thin film solar battery and preparation method thereof
  • Cadmium telluride thin film solar battery and preparation method thereof
  • Cadmium telluride thin film solar battery and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0019] The embodiment of the present invention discloses a cadmium telluride thin-film solar cell. The back contact layer is optimized, which can form a good ohmic contact with the light absorbing layer, reduce the potential barrier, improve the defects of the light absorbing layer, and increase the band gap of cadmium telluride. Improve the open circuit voltage and fill factor of the cadmium telluride thin film solar cell, the initial performance and long-term...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a cadmium telluride thin film solar battery. The cadmium telluride thin film solar battery comprises a substrate layer, a light absorbing layer, a back contact layer and a backelectrode layer which are arranged sequentially from bottom to top; the light absorbing layer is a cadmium telluride film layer; and the back contact layer is composed of an antimony telluride and copper selenide composite material. According to the cadmium telluride thin film solar battery of the invention, the back contact layer made of the antimony telluride and copper selenide composite material can form good ohmic contact with the cadmium telluride light absorbing layer, and therefore, potential barriers are lowered, and doped copper selenide can effectively eliminate the defects of thecadmium telluride light absorbing layer, and after selenium diffuses to a cadmium telluride interface, the forbidden band width of the cadmium telluride can be effectively increased, and presents deep-V type gradient change; and the initial performance and long-term stability of the battery are excellent, and the conversion efficiency of the battery is high.

Description

technical field [0001] The invention relates to the technical field of thin-film solar cells, in particular to a cadmium telluride thin-film solar cell and a preparation method thereof. Background technique [0002] Cadmium telluride thin-film solar cell is referred to as CdTe cell, which is a thin-film solar cell based on the heterojunction of p-type CdTe and n-type CdS. In 1993, the University of South Florida used the sublimation method in 1cm 2 A solar cell with a conversion efficiency of 15.8% was made in terms of area; subsequently, the CdTe small-area cell researched by Japan's Matsushita Battery had a maximum conversion efficiency of 16% in the laboratory, which became the highest record for cadmium telluride thin-film solar cells at that time. In recent years, the research directions of solar cells are high conversion efficiency, low cost and high stability. The area developed by Siemens is 3600cm 2 The conversion efficiency of cadmium telluride thin-film solar c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/0296H01L31/0445H01L31/18
CPCY02E10/50Y02P70/50
Inventor 彭寿马立云潘锦功傅干华赵雷
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com