Thin-film transistor and manufacturing method thereof, array substrate and display device
A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of display aperture ratio decrease, off-state current difficult to maintain, TFT area increase, etc., to reduce photoleakage current, increase the band gap, and reduce the effect of leakage current
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[0046] In order to further understand the features, technical means and specific objectives and functions achieved by the present invention, the present invention will be further described in detail below in conjunction with specific embodiments.
[0047] For example, a method for manufacturing a thin film transistor includes: a step of depositing an amorphous silicon layer; a step of crystallizing the amorphous silicon layer to form a polysilicon layer; a step of forming an active layer; forming a channel doped the step of carbon ion implantation; the step of forming gate insulating layer and gate; the step of forming via hole; the step of forming source electrode and drain electrode. As another example, the step of forming the polysilicon layer is followed by the step of implanting carbon ions. That is, carbon ion implantation is performed on the polysilicon layer. In another example, after forming the active layer, the step of carbon ion implantation is performed, and then...
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